Plasma-Assist Effect on the Sputter-Deposition Process of Transparent Conductive Metal-doped Zinc Oxide Thin Films
Project/Area Number |
20540485
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Plasma science
|
Research Institution | Nagasaki University |
Principal Investigator |
MATSUDA Yoshinobu Nagasaki University, 工学部, 准教授 (60199817)
|
Project Period (FY) |
2008 – 2010
|
Project Status |
Completed (Fiscal Year 2010)
|
Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
Keywords | スパッタリング / 誘導結合プラズマ / 透明導電膜 / 酸化亜鉛 / プレーナマグネトロン / 電気導電率 / 吸収分光 / 熱流束 / アルミ添加酸化亜鉛 |
Research Abstract |
Zinc oxide (ZnO) is an environmentally-friendly, low-cost and promising transparent conductive material to replace indium tin oxide (ITO) which has been widely-used so far. Inductively coupled plasma assisted magnetron sputtering has been applied for the deposition of transparent conductive aluminum-doped zinc oxide (AZO) thin films. Good quality AZO thin films with high transmittance and low resistivity have been successfully obtained by the assist with ICP.
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Report
(4 results)
Research Products
(52 results)