pgrading electronic functions of semiconducting polymers based on clean doping
| Project/Area Number |
20550162
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Functional materials/Devices
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| Research Institution | Shinshu University |
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Principal Investigator |
ICHIKAWA Musubu Shinshu University, 繊維学部, 准教授 (80324242)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2010: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Keywords | 有機トランジスタ / ポリマートランジスタ / ポリチオフェン / 貧溶媒効果 / 電荷移動相互作用 / 薄膜トランジスタ / ドーピング |
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| Research Abstract |
We investigated the effects of volatile additives, trifluoromethylbenzene (TFMB) in the solutions used to prepare thin-film transistors (TFTs) of regioregular poly(3-hexylthiophene) (P3HT). The additives improve the performance of the resulting TFTs when the boiling point (Tb) of the major solvent is lower than that of the additive. The relative Tb of the solvent and additive affected the film formation, with the TFMB remaining at the final stage of thin film deposition influencing the precipitation of P3HT aggregates. In addition, charge transfer interactions between P3HT and TFMB may also improve the performance of the resulting TFTs from another experiment using methylcyclohexane, a saturated hydrocarbon, as the volatile additive, whose Tb is almost the same as TFMB.
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Report
(4 results)
Research Products
(7 results)
