| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2010: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Research Abstract |
We investigated the effects of volatile additives, trifluoromethylbenzene (TFMB) in the solutions used to prepare thin-film transistors (TFTs) of regioregular poly(3-hexylthiophene) (P3HT). The additives improve the performance of the resulting TFTs when the boiling point (Tb) of the major solvent is lower than that of the additive. The relative Tb of the solvent and additive affected the film formation, with the TFMB remaining at the final stage of thin film deposition influencing the precipitation of P3HT aggregates. In addition, charge transfer interactions between P3HT and TFMB may also improve the performance of the resulting TFTs from another experiment using methylcyclohexane, a saturated hydrocarbon, as the volatile additive, whose Tb is almost the same as TFMB.
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