Development of Ultraviolet APD Device by Widegap Semiconductors

• Project/Area Number: 20560009
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tottori University
• Principal Investigator: ANDO Koshi Tottori University, 工学研究科, 教授 (60263480)
• Co-Investigator(Kenkyū-buntansha): ABE Tomoki 鳥取大学, 工学研究科, 准教授 (20294340)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2010: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2009: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2008: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: 紫外光波帯APD素子 / ワイドギャップ化合物半導体APD素子 / 有機-無機複合型APD素子 / 化合物半導体MBE成長 / ワイドギャップ化合物半導体AME成長 / 紫外APD / (ZnSSe-APD / ZnSSe-PIN型APD / 低動作電圧APDワイドギャップ半導体APD / ZnSSe-APD / 低動作電圧APD

Research Abstract

High efficiency UV-photodiodes (PIN and APD) have been developed using widegap compound semiconductors (ZnSSe/GaAs) by MBE. PIN structure device shows external quantum efficiencies of 60% in UV region (350nm). On the other hand、 new hybrid-structure ZnSSe-PEDOT exhibits clear APD operation under extremely low voltage of 28-35V with high signal gain (G～100).

Research Products

• [Journal Article] High sensitive ultraviolet organic-inorganic hybrid photodetectors on ZnSSe grown on p-GaAs with traqnsparent conducting plymer windowlayer (2010)
  • Author(s): T、Abe、K.Ando, etal.
  • Journal Title: Phys.Status Solidi B247 Pages: 1706-1708
• [Journal Article] Strucural Insataibility of N-acceptors in homo- and heteroepitaxially grown ZnO by MBE (2010)
  • Author(s): K.Ando、T.Abe, etal.
  • Journal Title: Phys.Status Solidi B247 Pages: 1453-1456
• [Journal Article] Structural Insatability of N-acceptors in Homo and Heteroepitaxially Grwon ZnO by MBE. (2010)
  • Author(s): K.Ando、T.Abe、T.Taya、Y.Ishihara、K.Enomoto、Y.Yamazaki、J.Yoshika-wa、J.Fujino、H.Nakamura、T.Ohno, H.Kasada
  • Journal Title: Phys.Status.Solidi B1-4 2010
• [Journal Article] Strucural Insataibility of N-acceptors in homo- and heteroepitaxially grown ZnO by MBE (2010)
  • Author(s): K.Ando, T.Abe, et al.
  • Journal Title: Phys.Status Solidi Volume: B247 Pages: 1453-1456
  • Peer Reviewed
• [Journal Article] High sensitive ultraviolet organic-inorganic hybrid photodetectors on ZnSSe grown on p-GaAs with traqnsparent conducting plymer window-layer (2010)
  • Author(s): T, Abe, K.Anso, et al.
  • Journal Title: Phys.Status Solidi Volume: B247 Pages: 1706-1708
  • Peer Reviewed
• [Journal Article] Structural Insatability of N-acceptors in Homo- and Heteroepitaxially Grwon ZnO by MBE. (2010)
  • Author(s): K.Ando, T.Abe, T.Taya, Y.Ishihara, K.Enomoto, Y.Yamazaki, J.Yoshikawa, J.Fujino, H.Nakamura, T.Ohno, H.Kasada
  • Journal Title: Phys. Status. Solidi BI-4(in press)
  • Peer Reviewed
• [Journal Article] High sensitive ultraviolet organic-inorganic hybrid photodetectors on ZnSSe grown on p-GaAs with transparent conduction plymer window-Layer. (2010)
  • Author(s): T.Abe, D.Katada, K.Miki, K.Tanaka, M.Nomura, Y.Inagaki, T.Tani, M.Ohtsuki, H.Kasada, K.Ando
  • Journal Title: Phys.Status.Solidi C1-3(in press)
  • Peer Reviewed
• [Journal Article] High Senisitve Ultraviolet Schottky Photodetectors of ZnSSe Organic-Inorganic Hybrid Structure on p+-GaAs Substrate. (2009)
  • Author(s): T.Tanaka、D.Katada、K.Miki、M.Nomura、Y.Inagaki、T.Tani、T.abe、H.Kasada, K.Ando
  • Journal Title: 28th Electronic Material Symposium (EMS-28) Extended Abstaract. EMS-28 Pages: 241-244
• [Journal Article] High Sensitive Ultraviolet Organic-Inorganic Hybrid Photodetectors grown on p-GaAs with Transparent Conducting Polymer Window-layer Proceeding in14th II-VI compounds (2009)
  • Author(s): T.Abe、K.Ando, et.al.
• [Journal Article] High Sensitive Ultraviole PIN Photodiodes of ZnSSe n+-i-p Structure p+-GaAs with extremely thin n+-Window layer grown by MBE (2009)
  • Author(s): K.Miki、Y.Oshita、K.Ando, etal.
  • Journal Title: J.Korean Phys.Society 53 Pages: 2925-2928
• [Journal Article] High Senisitve Ultraviolet Schottoky Photodetectors of ZnSSe Organic-Inorganic Hybrid Structure on p^+-GaAs Substrate. (2009)
  • Author(s): T.Tanaka, D.Katada, K.Miki, M.Nomura, Y, Inagaki, T.Tani, T, abe, H.Kasada, K.Ando
  • Journal Title: 28^<th> Electronic Material Symposium (EMS-28) Extended Abstaract. EMS-28 Pages: 241-244
  • Peer Reviewed
• [Journal Article] High Sensitive Ultraviolet PIN Photodiodes of ZnSSe n^+-i-p Structure p+-GaAs with extremely thin n+-Window layer grown by MBE (2009)
  • Author(s): K, Miki, Y. Oshita, K. Ando, et al.
  • Journal Title: J. Korean Phys. Society 53 Pages: 2925-2928
  • Peer Reviewed
• [Journal Article] High Sensitive Ultraviolet Organic-Inorganic Hybrid Photodetectors grown on p-GaAs with Transparent Conducting Polymer Window-layer (in press) (2009)
  • Author(s): T. Abe, K. Ando, et. al.
  • Journal Title: Proceeding in14^<th> II-VI compounds (Sept. 2009)
  • Peer Reviewed
• [Journal Article] New-Defect Control for extremely long-Lived Widegap-White Light Enitting Diodes (2008)
  • Author(s): K. Ando, Y. Hashimoto, et. al.
  • Journal Title: J. Korean Phys. Society 53 Pages: 2857-2860
  • Peer Reviewed
• [Journal Article] High sensitive ultraviolet organic-inorganic hybrid photodetectors on ZnSSe grown on p-GaAs with transparent conduction plymer window-Layer.
  • Author(s): T.Abe、D.Katada、K.Miki、K.Tanaka、M.Nomura、Y.Inagaki、T.Tani、M.Ohtsuki、H.Kasada, K.Ando
  • Journal Title: Phys.Status.Solidi C1-3 2010
• [Presentation] 有機-無機半導体ハイブリッド型紫外光検出素子の暗竃流制御 (2010)
  • Author(s): 稲垣雄介、安東孝止, 他
  • Organizer: 応用物理学会(2010年中国四国支部学術講演会)
  • Place of Presentation: 高知大学
  • Year and Date: 2010-07-31
• [Presentation] 有機-無機半導体ハイブリッド型紫外光検出素子の暗電流制御 (2010)
  • Author(s): 稲垣雄介、安東孝止, 他
  • Organizer: 応用物理学会(2010年中国四国支部学術講演会)
  • Place of Presentation: 高知大学
  • Year and Date: 2010-07-31
• [Presentation] 2009年春季 (2009)
  • Organizer: 第56回応用物理関係連合講演会
  • Place of Presentation: つくば大学
  • Year and Date: 2009-04-01
• [Presentation] ZnSSe系ワイドギャップ半導体による紫外高感度光検出素子の開発 (2009)
  • Author(s): 田中, 三木, 阿部, 笠田, 安東, 他
  • Organizer: 2009年春季 第56回応用物理関係連合講演会
  • Place of Presentation: 発 表 場 所つくば大学
  • Year and Date: 2009-04-01
• [Presentation] ZnSSe系II-VI族ワイドギャップ半導体を用いた紫外高感度光検出素子の開発 (2009)
  • Author(s): 田中健、堅田大輔、阿部友紀、安東孝止, 他
  • Organizer: 他2009応用物理学・中四国支部学術講演会
  • Place of Presentation: 広島大学
• [Presentation] ZnSSe系II-VI族ワイドギャップ半導体を用いた紫外高感度光検出素子の開発、他 (2009)
  • Author(s): 田中健、堅田大輔、阿部友紀、安東孝止, 他
  • Organizer: 2009応用物理学・中四国支部学術講演会
  • Place of Presentation: 広島大学
• [Book] 高効率太陽電池の開発と応用 (2009)
  • Author(s): 山口真史、安東孝止, 他
  • Publisher: シーエムシー出版
• [Patent(Industrial Property Rights)] 無機半導体および有機-無機半導体ハイブリッド型光電変換デバイス (2009)
  • Inventor(s): 安東孝止, 他
  • Industrial Property Rights Holder: 鳥取大学
  • Filing Date: 2009-07-13