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Development of Ultraviolet APD Device by Widegap Semiconductors

Research Project

Project/Area Number 20560009
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTottori University

Principal Investigator

ANDO Koshi  Tottori University, 工学研究科, 教授 (60263480)

Co-Investigator(Kenkyū-buntansha) ABE Tomoki  鳥取大学, 工学研究科, 准教授 (20294340)
Project Period (FY) 2008 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2009: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2008: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Keywords紫外光波帯APD素子 / ワイドギャップ化合物半導体APD素子 / 有機-無機複合型APD素子 / 化合物半導体MBE成長 / ワイドギャップ化合物半導体AME成長 / 紫外APD / (ZnSSe-APD / ZnSSe-PIN型APD / 低動作電圧APDワイドギャップ半導体APD / ZnSSe-APD / 低動作電圧APD
Research Abstract

High efficiency UV-photodiodes (PIN and APD) have been developed using widegap compound semiconductors (ZnSSe/GaAs) by MBE. PIN structure device shows external quantum efficiencies of 60% in UV region (350nm). On the other hand、 new hybrid-structure ZnSSe-PEDOT exhibits clear APD operation under extremely low voltage of 28-35V with high signal gain (G~100).

Report

(4 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (23 results)

All 2010 2009 2008 Other

All Journal Article (15 results) (of which Peer Reviewed: 8 results) Presentation (6 results) Book (1 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] High sensitive ultraviolet organic-inorganic hybrid photodetectors on ZnSSe grown on p-GaAs with traqnsparent conducting plymer windowlayer2010

    • Author(s)
      T、Abe、K.Ando, etal.
    • Journal Title

      Phys.Status Solidi B247

      Pages: 1706-1708

    • Related Report
      2010 Final Research Report
  • [Journal Article] Strucural Insataibility of N-acceptors in homo- and heteroepitaxially grown ZnO by MBE2010

    • Author(s)
      K.Ando、T.Abe, etal.
    • Journal Title

      Phys.Status Solidi B247

      Pages: 1453-1456

    • Related Report
      2010 Final Research Report
  • [Journal Article] Structural Insatability of N-acceptors in Homo and Heteroepitaxially Grwon ZnO by MBE.2010

    • Author(s)
      K.Ando、T.Abe、T.Taya、Y.Ishihara、K.Enomoto、Y.Yamazaki、J.Yoshika-wa、J.Fujino、H.Nakamura、T.Ohno, H.Kasada
    • Journal Title

      Phys.Status.Solidi B1-4 2010

    • Related Report
      2010 Final Research Report
  • [Journal Article] Strucural Insataibility of N-acceptors in homo- and heteroepitaxially grown ZnO by MBE2010

    • Author(s)
      K.Ando, T.Abe, et al.
    • Journal Title

      Phys.Status Solidi

      Volume: B247 Pages: 1453-1456

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High sensitive ultraviolet organic-inorganic hybrid photodetectors on ZnSSe grown on p-GaAs with traqnsparent conducting plymer window-layer2010

    • Author(s)
      T, Abe, K.Anso, et al.
    • Journal Title

      Phys.Status Solidi

      Volume: B247 Pages: 1706-1708

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural Insatability of N-acceptors in Homo- and Heteroepitaxially Grwon ZnO by MBE.2010

    • Author(s)
      K.Ando, T.Abe, T.Taya, Y.Ishihara, K.Enomoto, Y.Yamazaki, J.Yoshikawa, J.Fujino, H.Nakamura, T.Ohno, H.Kasada
    • Journal Title

      Phys. Status. Solidi BI-4(in press)

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High sensitive ultraviolet organic-inorganic hybrid photodetectors on ZnSSe grown on p-GaAs with transparent conduction plymer window-Layer.2010

    • Author(s)
      T.Abe, D.Katada, K.Miki, K.Tanaka, M.Nomura, Y.Inagaki, T.Tani, M.Ohtsuki, H.Kasada, K.Ando
    • Journal Title

      Phys.Status.Solidi C1-3(in press)

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Senisitve Ultraviolet Schottky Photodetectors of ZnSSe Organic-Inorganic Hybrid Structure on p+-GaAs Substrate.2009

    • Author(s)
      T.Tanaka、D.Katada、K.Miki、M.Nomura、Y.Inagaki、T.Tani、T.abe、H.Kasada, K.Ando
    • Journal Title

      28th Electronic Material Symposium (EMS-28) Extended Abstaract. EMS-28

      Pages: 241-244

    • Related Report
      2010 Final Research Report
  • [Journal Article] High Sensitive Ultraviolet Organic-Inorganic Hybrid Photodetectors grown on p-GaAs with Transparent Conducting Polymer Window-layer Proceeding in14th II-VI compounds2009

    • Author(s)
      T.Abe、K.Ando, et.al.
    • Related Report
      2010 Final Research Report
  • [Journal Article] High Sensitive Ultraviole PIN Photodiodes of ZnSSe n+-i-p Structure p+-GaAs with extremely thin n+-Window layer grown by MBE2009

    • Author(s)
      K.Miki、Y.Oshita、K.Ando, etal.
    • Journal Title

      J.Korean Phys.Society 53

      Pages: 2925-2928

    • Related Report
      2010 Final Research Report
  • [Journal Article] High Senisitve Ultraviolet Schottoky Photodetectors of ZnSSe Organic-Inorganic Hybrid Structure on p^+-GaAs Substrate.2009

    • Author(s)
      T.Tanaka, D.Katada, K.Miki, M.Nomura, Y, Inagaki, T.Tani, T, abe, H.Kasada, K.Ando
    • Journal Title

      28^<th> Electronic Material Symposium (EMS-28) Extended Abstaract. EMS-28

      Pages: 241-244

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Sensitive Ultraviolet PIN Photodiodes of ZnSSe n^+-i-p Structure p+-GaAs with extremely thin n+-Window layer grown by MBE2009

    • Author(s)
      K, Miki, Y. Oshita, K. Ando, et al.
    • Journal Title

      J. Korean Phys. Society 53

      Pages: 2925-2928

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Sensitive Ultraviolet Organic-Inorganic Hybrid Photodetectors grown on p-GaAs with Transparent Conducting Polymer Window-layer (in press)2009

    • Author(s)
      T. Abe, K. Ando, et. al.
    • Journal Title

      Proceeding in14^<th> II-VI compounds (Sept. 2009)

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] New-Defect Control for extremely long-Lived Widegap-White Light Enitting Diodes2008

    • Author(s)
      K. Ando, Y. Hashimoto, et. al.
    • Journal Title

      J. Korean Phys. Society 53

      Pages: 2857-2860

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High sensitive ultraviolet organic-inorganic hybrid photodetectors on ZnSSe grown on p-GaAs with transparent conduction plymer window-Layer.

    • Author(s)
      T.Abe、D.Katada、K.Miki、K.Tanaka、M.Nomura、Y.Inagaki、T.Tani、M.Ohtsuki、H.Kasada, K.Ando
    • Journal Title

      Phys.Status.Solidi C1-3 2010

    • Related Report
      2010 Final Research Report
  • [Presentation] 有機-無機半導体ハイブリッド型紫外光検出素子の暗竃流制御2010

    • Author(s)
      稲垣雄介、安東孝止, 他
    • Organizer
      応用物理学会(2010年中国四国支部学術講演会)
    • Place of Presentation
      高知大学
    • Year and Date
      2010-07-31
    • Related Report
      2010 Final Research Report
  • [Presentation] 有機-無機半導体ハイブリッド型紫外光検出素子の暗電流制御2010

    • Author(s)
      稲垣雄介、安東孝止, 他
    • Organizer
      応用物理学会(2010年中国四国支部学術講演会)
    • Place of Presentation
      高知大学
    • Year and Date
      2010-07-31
    • Related Report
      2010 Annual Research Report
  • [Presentation] 2009年春季2009

    • Organizer
      第56回応用物理関係連合講演会
    • Place of Presentation
      つくば大学
    • Year and Date
      2009-04-01
    • Related Report
      2010 Final Research Report
  • [Presentation] ZnSSe系ワイドギャップ半導体による紫外高感度光検出素子の開発2009

    • Author(s)
      田中, 三木, 阿部, 笠田, 安東, 他
    • Organizer
      2009年春季 第56回応用物理関係連合講演会
    • Place of Presentation
      発 表 場 所つくば大学
    • Year and Date
      2009-04-01
    • Related Report
      2008 Annual Research Report
  • [Presentation] ZnSSe系II-VI族ワイドギャップ半導体を用いた紫外高感度光検出素子の開発2009

    • Author(s)
      田中健、堅田大輔、阿部友紀、安東孝止, 他
    • Organizer
      他2009応用物理学・中四国支部学術講演会
    • Place of Presentation
      広島大学
    • Related Report
      2010 Final Research Report
  • [Presentation] ZnSSe系II-VI族ワイドギャップ半導体を用いた紫外高感度光検出素子の開発、他2009

    • Author(s)
      田中健、堅田大輔、阿部友紀、安東孝止, 他
    • Organizer
      2009応用物理学・中四国支部学術講演会
    • Place of Presentation
      広島大学
    • Related Report
      2009 Annual Research Report
  • [Book] 高効率太陽電池の開発と応用2009

    • Author(s)
      山口真史、安東孝止, 他
    • Publisher
      シーエムシー出版
    • Related Report
      2010 Final Research Report 2009 Annual Research Report
  • [Patent(Industrial Property Rights)] 無機半導体および有機-無機半導体ハイブリッド型光電変換デバイス2009

    • Inventor(s)
      安東孝止, 他
    • Industrial Property Rights Holder
      鳥取大学
    • Filing Date
      2009-07-13
    • Related Report
      2010 Final Research Report

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Published: 2008-04-01   Modified: 2016-04-21  

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