Formation of strained quasi-single crystal SiGe on glass for transistor application
| Project/Area Number |
20560011
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyushu University |
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Principal Investigator |
SADOH Taizoh (2010) Kyushu University, 大学院・システム情報科学研究院, 准教授 (20274491)
権丈 淳 (2008-2009) Kyushu University, 大学院・システム情報科学研究院, テクニカルスタッフ (20037899)
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| Co-Investigator(Kenkyū-buntansha) |
KENJO Atsushi 九州大学, 大学院・システム情報科学研究院, テクニカルスタッフ (20037899)
佐道 泰造 九州大学, 大学院・システム情報科学研究院, 准教授 (20274491)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2008: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 半導体 / SiGe / ディスプレイ / 電子デバイス・機器 / 集積回路 / シリコンゲルマニウム / 薄膜トランジスタ |
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| Research Abstract |
Formation techniques of strained quasi-single crystal SiGe on glass were investigated for transistor application. We have realized orientation control of SiGe on insulating substrates. Furthermore, the device fabrication process of silicide S/D transistors was developed.
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Report
(4 results)
Research Products
(58 results)
