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Formation of strained quasi-single crystal SiGe on glass for transistor application

Research Project

Project/Area Number 20560011
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKyushu University

Principal Investigator

SADOH Taizoh (2010)  Kyushu University, 大学院・システム情報科学研究院, 准教授 (20274491)

権丈 淳 (2008-2009)  Kyushu University, 大学院・システム情報科学研究院, テクニカルスタッフ (20037899)

Co-Investigator(Kenkyū-buntansha) KENJO Atsushi  九州大学, 大学院・システム情報科学研究院, テクニカルスタッフ (20037899)
佐道 泰造  九州大学, 大学院・システム情報科学研究院, 准教授 (20274491)
Project Period (FY) 2008 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2008: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Keywords半導体 / SiGe / ディスプレイ / 電子デバイス・機器 / 集積回路 / シリコンゲルマニウム / 薄膜トランジスタ
Research Abstract

Formation techniques of strained quasi-single crystal SiGe on glass were investigated for transistor application. We have realized orientation control of SiGe on insulating substrates. Furthermore, the device fabrication process of silicide S/D transistors was developed.

Report

(4 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (58 results)

All 2011 2010 2009 2008

All Journal Article (27 results) (of which Peer Reviewed: 27 results) Presentation (31 results)

  • [Journal Article] Dehydrogenation-Enhanced Large Strain(~1.6%) in Si Pillars Covered by Si 3N 4 Stress Liners2011

    • Author(s)
      M.Kurosawa, T.Sadoh, M.Miyao
    • Journal Title

      Electrochemical and Solid-State Letters Vol.14, No.4

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Selective-mapping of uniaxial and biaxial strains in Si-on-insulator microstructures by polarized microprobe Raman pectroscopy2011

    • Author(s)
      M.Kurosawa, T.Sadoh, M.Miyao
    • Journal Title

      Applied Physics Letters Vol.98, No.1

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Au-Induced Low-Temperature (~250℃) Crystallization of Si on Insulator Through Layer-Exchange Process : Jong-Hyeok Park2011

    • Author(s)
      M.Kurosawa, N.Kawabata, M.Miyao, T.Sadoh
    • Journal Title

      Electrochemical and Solid-State Letters Vol.14, No.6

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Low-Temperature (~250℃) Cu-Induced Lateral Crystallization of Amorphous Ge on Insulator2011

    • Author(s)
      T.Sadoh, M.Kurosawa, T.Hagihara, K.Toko, M.Miyao
    • Journal Title

      Electrochemical and Solid-State Letters Vol.14, No.7

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Dehydrogenation-Enhanced Large Strain (~1.6%) in Si Pillars Covered by Si_3N_4 Stress Liners2011

    • Author(s)
      T.Sadoh, et al.
    • Journal Title

      Electrochemical and Solid-State Letters

      Volume: 14

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Al-induced low-temperature crystallization of Si <1 x>Ge x (0<x<1) by controlling layer exchange process2010

    • Author(s)
      M.Kurosawa, T.Sadoh, M.Miyao
    • Journal Title

      Thin Solid Films 518

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Microscopic studies of metal-induced lateral crystallization in SiGe2010

    • Author(s)
      M.Itakura, S.Masumori, N.Kuwano, H.Kanno, T.Sadoh, M.Miyao
    • Journal Title

      Applied Physics Letters Vol.96, No.18

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique2010

    • Author(s)
      K.Toko, M.Kurosawa, H.Yokoyama, N.Kawabata, T.Sakane, Y.Ohta, T.Tanaka, T.Sadoh, M.Miyao
    • Journal Title

      Applied Physics Express Vol.3

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Relaxation Mechanism of SiGe-on-Insulator by Oxidation-Induced Ge Condensation with H^+ Irradiation and Postannealing2010

    • Author(s)
      M.Tanaka, T.Sadoh, M.Miyao
    • Journal Title

      Journal of The Electrochemical Society Vol.157, No.11

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Low-temperature (≦250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique : Jong-Hyeok Park2010

    • Author(s)
      M.Kurosawa, N.Kawabata, M.Miyao, T.Sadoh
    • Journal Title

      TENCON 2010-2010 IEEE Region 10

      Pages: 2196-2198

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Ge Fraction Dependence of Al-Induced Crystallization of SiGeat Low Temperatures2009

    • Author(s)
      M.Kurosawa, Y.Tsumura, T.Sadoh, M.Miyao
    • Journal Title

      Journal of the Korean Physical Society Vol.54, No.1

      Pages: 451-454

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization2009

    • Author(s)
      K.Toko, T.Sadoh, M.Miyao
    • Journal Title

      Japanese Journal of Applied Physics Vol.48, No.3

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si <1-x>Ge x (x : 0-1) on Insulating Substrate2009

    • Author(s)
      M.Kurosawa, Y.Tsumira, T.Sadoh, M.Miyao
    • Journal Title

      Japanese Journal of Applied Physics Vol.48, No.3

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO 2 Structures2009

    • Author(s)
      T.Sadoh, H.Ohta, M.Miyao
    • Journal Title

      Japanese Journal of Applied Physics Vol.48, No.3

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Indentation-induced low-temperature solid-phase crystallization of Si <1-x>Ge x (x : 0-1) on insulator2009

    • Author(s)
      K.Toko, T.Sadoh, M.Miyao
    • Journal Title

      Applied Physics Letters Vol.94, No.19

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation2009

    • Author(s)
      M.Kurosawa, N.Kawabata, T.Sadoh, M.Miyaob
    • Journal Title

      Applied Physics Letters Vol.95, No.13

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization2009

    • Author(s)
      K.Toko, I.Nakao, T.Sadoh, T.Noguchi, M.Miyao
    • Journal Title

      Solid-State Electronics Vol.53

      Pages: 1159-1164

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation2009

    • Author(s)
      T.Tanaka, T.Sadoh, M.Kurosawa, M.Tanaka, M.Yamaguchi, S.Suzuki, T.Kitamura, M.Miyao
    • Journal Title

      Applied Physics Letters Vol.95

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation2009

    • Author(s)
      M.Kurosawa, et al.
    • Journal Title

      Applied Physics Letters 95

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si_<1-x> Gex(x : 0-1) on Insulating Substrate2009

    • Author(s)
      M. Kurosawa, et al.
    • Journal Title

      Japanese Journal of Applied Physics 48

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influences of Si Pillar Geometry on SiN-Stressor Induced Local Strain2008

    • Author(s)
      M.Tanaka, T.Sadoh, J.Morioka, T.Kitamura, M.Miyao
    • Journal Title

      Applied Surface Science Vol.254, No.19

      Pages: 6226-6228

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Low-Temperature Solid-Phase Crystallization of Amorphous SiGe Films on Glass by Imprint Technique2008

    • Author(s)
      K.Toko, H.Kanno, A.Kenjo, T.Sadoh, T.Asano, M.Miyao
    • Journal Title

      Solid-State Electronics Vol.52, No.8

      Pages: 1221-1224

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization2008

    • Author(s)
      T.Sadoh, K.Toko, K.Ikeda, S.Hata, M.Itakura, H.Nakashima, M.Nishida, M.Miyao
    • Journal Title

      ECS Transactions Vol.16, No.10

      Pages: 219-222

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Enhancement of Local Strain in Si Microstructure by Oxidation Induced Ge Condensation2008

    • Author(s)
      M.Tanaka, T.Tanaka, T.Sadoh, J.Morioka, T.Kitamura, M.Miyao
    • Journal Title

      ECS Transactions Vol.16 No.10

      Pages: 189-192

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Comprehensive study of low temperature (<1000°C) oxidation process in SiGe/SOI structures2008

    • Author(s)
      M.Tanaka, T.Ohka, T.Sadoh, M.Miyao
    • Journal Title

      Thin Solid Films Vol.517, No.1

      Pages: 251-253

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence2008

    • Author(s)
      Dong Wang, H.Nakashima, M.Tanaka, T.Sadoh, M.Miyao, J.Morioka, T.Kitamura
    • Journal Title

      Thin Solid Films Vol.517, No.1

      Pages: 31-33

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H^+ irradiation-assisted Ge condensation method2008

    • Author(s)
      M.Tanaka, A.Kenjo, T.Sadoh, M.Miyao
    • Journal Title

      Thin Solid Films Vol.517, No.1

      Pages: 248-250

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Presentation] Al-Induced Oriented-Crystallization of Si Films on Quartz and Its Application to Epitaxial-Template for Ge Growth2011

    • Author(s)
      M.Kurosawa, et al.
    • Organizer
      5th ISTDM 2010
    • Place of Presentation
      ストックホルム
    • Year and Date
      2011-05-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] エキシマレーザアニールによるSiN誘起ローカル歪みの増強2011

    • Author(s)
      佐道泰造, 黒澤昌志, 部家彰, 松尾直人, 宮尾正信
    • Organizer
      2011年春季第58回応用物理学関係連合講演会,25a-P3-22
    • Place of Presentation
      神奈川
    • Related Report
      2010 Final Research Report
  • [Presentation] 金属誘起反応を用いたSi <1-x>Ge x/絶縁膜(x : 0~1)の低温結晶成長2011

    • Author(s)
      佐道泰造, 黒澤昌志, 川畑直之, 朴鍾, 都甲薫, 宮尾正信
    • Organizer
      2011年春季第58回応用物理学関係連合講演会,24p-BK-10
    • Place of Presentation
      神奈川
    • Related Report
      2010 Final Research Report
  • [Presentation] 次世代フレキシブルデバイスの為の多結晶Si <1-x>Ge x(x=0-1)/絶縁膜の極低温層交換成長(~250^0C):朴鍾2011

    • Author(s)
      黒澤昌志, 川畑直之, 宮尾正信, 佐道泰造
    • Organizer
      2011年春季第58回応用物理学関係連合講演会,24a-P2-8
    • Place of Presentation
      神奈川
    • Related Report
      2010 Final Research Report
  • [Presentation] AlC初期過程におけるSi <0.5>Ge <0.5>薄膜の微細構造解析2011

    • Author(s)
      犬塚純平, 光原昌寿, 板倉賢, 西田稔, 黒澤昌志, 佐道泰造, 宮尾正信
    • Organizer
      2011年春季第58回応用物理学関係連合講演会,27p-BA-3
    • Place of Presentation
      神奈川
    • Related Report
      2010 Final Research Report
  • [Presentation] ガラス上におけるSiGe薄膜のアルミニウム誘起結晶化とその成長メカニズム:2010

    • Author(s)
      川畑直之, 黒澤昌志, 佐道泰造, 宮尾正信
    • Organizer
      電子情報通信学会研究会SDM2010
    • Place of Presentation
      沖縄
    • Year and Date
      2010-04-23
    • Related Report
      2010 Final Research Report
  • [Presentation] インプリントSi種結晶からの溶融エピタキシャル成長による単結晶GOIの無欠陥形成2010

    • Author(s)
      坂根尭, 都甲薫, 田中貴規, 佐道泰造, 宮尾正信
    • Organizer
      電子情報通信学会研究会SDM2010
    • Place of Presentation
      沖縄
    • Year and Date
      2010-04-23
    • Related Report
      2010 Final Research Report
  • [Presentation] Al-Induced Oriented-Crystallization of Si Films on Quartz and Its Application to Epitaxial-Template for Ge Growth2010

    • Author(s)
      M.Kurosawa, N.Kawabata, K.Toko, T.Sadoh, M.Miyao
    • Organizer
      5th ISTDM2010, 8-5
    • Place of Presentation
      Stockholm, Sweden
    • Related Report
      2010 Final Research Report
  • [Presentation] Strained Single-Crystal GOI (Ge on Insulator) Arrays by Rapid-Melting Growth from Si (111) Micro-Seeds2010

    • Author(s)
      T.Sakane, K.Toko, T.Tanaka, T.Sadoh, M.Miyao
    • Organizer
      5th ISTDM2010, 8-2
    • Place of Presentation
      Stockholm, Sweden
    • Related Report
      2010 Final Research Report
  • [Presentation] Interfacial Oxide Layer Controlled Al-Induced Crystallization of Si on Insulator for Epitaxial Template2010

    • Author(s)
      M.Kurosawa, N.Kawabata, K.Toko, T.Sadoh, M.Miyao
    • Organizer
      5th International WorkShop on New Group IV Semiconductor Nanoelectronics,29-30
    • Place of Presentation
      Sendai, Japan (Jan.)
    • Related Report
      2010 Final Research Report
  • [Presentation] Orientation-controlled poly-SiGe on insulator by Aluminum-induced crystallization2010

    • Author(s)
      黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
    • Organizer
      ITC' 10 5A-3, 28-29
    • Place of Presentation
      Himeji, Japan, (Jan.)
    • Related Report
      2010 Final Research Report
  • [Presentation] Al誘起層交換法によるSiGe 結晶の配向成長機構2010

    • Author(s)
      川畑直之, 黒澤昌志, 朴鍾, 佐道泰造, 宮尾正信
    • Organizer
      第71回応用物理学会学術講演会,15p-ZD-2
    • Place of Presentation
      長崎
    • Related Report
      2010 Final Research Report
  • [Presentation] Al誘起結晶化Si <0.5>Ge <0.5>薄膜の微細構造解析2010

    • Author(s)
      犬塚純平, 板倉賢, 西田稔, 黒澤昌志, 佐道泰造, 宮尾正信
    • Organizer
      第57回応用物理学関係連合講演会,18p-TM-4
    • Place of Presentation
      湘南
    • Related Report
      2010 Final Research Report
  • [Presentation] Al誘起層交換成長法により形成したSiGe/絶縁膜の配向性制御2010

    • Author(s)
      川畑直之, 黒澤昌志, 佐道泰造, 宮尾正信
    • Organizer
      第57回応用物理学関係連合講演会,18p-TN-12
    • Place of Presentation
      湘南
    • Related Report
      2010 Final Research Report
  • [Presentation] 絶縁膜上におけるSi単結晶粒の方位制御とSiGeシキシング誘起横方向Geエピタキシヤル成長2010

    • Author(s)
      黒澤昌志, 川畑直之, 都甲薫, 佐道泰造, 宮尾正信
    • Organizer
      第57回応用物理学関係連合講演会,18a-D-8
    • Place of Presentation
      湘南
    • Related Report
      2010 Final Research Report
  • [Presentation] Orientation-controlled poly-SiGe on insulator by Aluminum-induced crystallization2010

    • Author(s)
      M.Kurosawa, et al.
    • Organizer
      ITC'10
    • Place of Presentation
      兵庫県姫路市
    • Related Report
      2009 Annual Research Report
  • [Presentation] アルミニウム誘起層交換法によるSiGe/ガラスの低温成長2009

    • Author(s)
      黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
    • Organizer
      電子情報通信学会研究会,SDM-7
    • Place of Presentation
      鳥栖
    • Year and Date
      2009-04-24
    • Related Report
      2010 Final Research Report
  • [Presentation] Orientation-Controlled poly-Si on glass by Al-induced layer exchange technique2009

    • Author(s)
      黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
    • Organizer
      MRS Fall Meeting, Q7-3
    • Place of Presentation
      Boston, U.S.A.
    • Related Report
      2010 Final Research Report
  • [Presentation] Orientation control of large grain poly-Si on glass by interfacial oxide layer controlled Al-induced crystallization2009

    • Author(s)
      黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
    • Organizer
      SSDM2009, H-8-4
    • Place of Presentation
      Sendai, Japan
    • Related Report
      2010 Final Research Report
  • [Presentation] Al-Induced Low Temperature Crystallization of Si <1-x>Ge x (0<x<1) by Interfacial Al Oxide Layer Control2009

    • Author(s)
      黒澤昌志, 佐道泰造, 宮尾正信
    • Organizer
      ICSI-6, 657524
    • Place of Presentation
      Los Angeles, USA
    • Related Report
      2010 Final Research Report
  • [Presentation] 金属触媒誘起横方向成長法による多結晶Geの極低温成長2009

    • Author(s)
      佐道泰造, 萩原貴嗣, 黒澤昌志, 都甲薫, 権丈淳
    • Organizer
      第56回応用物理学関係連合講演会,1a-T-3
    • Place of Presentation
      筑波
    • Related Report
      2010 Final Research Report
  • [Presentation] インプリント法による非晶質Siの方位制御結晶化とGeの歪ヘテロエピタキシャル成長2009

    • Author(s)
      坂根尭, 都甲薫, 田中貴規, 佐道泰造, 宮尾正信
    • Organizer
      第56回応用物理学関係連合講演会,1a-T-6
    • Place of Presentation
      筑波
    • Related Report
      2010 Final Research Report
  • [Presentation] UV照射アニールによるSiN誘起ローカル歪みの増強2009

    • Author(s)
      田中貴規, 田中政典, 黒澤昌志, 佐道泰造, 宮尾正信, 山口真典, 鈴木信二, 北村徳秀
    • Organizer
      第56回応用物理学関係連合講演会,30p-E-9
    • Place of Presentation
      筑波
    • Related Report
      2010 Final Research Report
  • [Presentation] 界面酸化膜制御によるSi <1-x>Ge x(0≦x≦1)混晶のAl誘起層交換成長2009

    • Author(s)
      黒澤昌志, 佐道泰造, 宮尾正信
    • Organizer
      第56回応用物理学関係連合講演会,30a-TF-9
    • Place of Presentation
      筑波
    • Related Report
      2010 Final Research Report
  • [Presentation] Si/Ge多層構造のAl誘起層交換成長とSi-Geミキシング2009

    • Author(s)
      黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
    • Organizer
      第56回応用物理学関係連合講演会,30a-TF-10
    • Place of Presentation
      筑波
    • Related Report
      2010 Final Research Report
  • [Presentation] AIC法で作製したSi <0.5>Ge <0.5>薄膜の微細構造解析2009

    • Author(s)
      犬塚純平, 板倉賢, 西田稔, 黒澤昌志, 佐道泰造, 宮尾正信
    • Organizer
      第56回応用物理学関係連合講演会,1a-T-5
    • Place of Presentation
      筑波
    • Related Report
      2010 Final Research Report
  • [Presentation] Indentation-Induced Solid-Phase Crystallization of SiGe on Insulator2008

    • Author(s)
      K.Toko, T.Sadoh, M.Miyao
    • Organizer
      New Group IV Semiconductor Nanoelectronics, Z-07
    • Place of Presentation
      Sendai, Japan
    • Related Report
      2010 Final Research Report
  • [Presentation] Effects of Si-Layer Thickness on Solid-Phase Crystalization of Stacked Ge/Si/SiO 2 Structure2008

    • Author(s)
      T.Sadoh, H.Ohta, M.Miyao
    • Organizer
      AM-FPD 08, 3-2
    • Place of Presentation
      Tokyo, Japan
    • Related Report
      2010 Final Research Report
  • [Presentation] Position Control of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization:2008

    • Author(s)
      K.Toko, T.Sadoh, M.Miyao
    • Organizer
      AM-FPD 08, P-15
    • Place of Presentation
      Tokyo, Japan
    • Related Report
      2010 Final Research Report
  • [Presentation] Interfacial-Oxide Controlled Al-Induced Crystallization of Si <1-x>Ge x (x : 0-1) on Insulating Substrate2008

    • Author(s)
      M.Kurosawa, Y.Tsumura, T.Sadoh, M.Miyao
    • Organizer
      AM-FPD 08, P-16
    • Place of Presentation
      Tokyo, Japan
    • Related Report
      2010 Final Research Report
  • [Presentation] Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si_<1-x> Gex (x : 0-1) on Insulating Substrate2008

    • Author(s)
      M. Kurosawa, et al.
    • Organizer
      AM-FPD 08
    • Place of Presentation
      東京都
    • Related Report
      2008 Annual Research Report

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Published: 2008-04-01   Modified: 2016-04-21  

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