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Fabrication of p-type ZnO using hydroge co-doping

Research Project

Project/Area Number 20560014
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionIshinomaki Senshu University

Principal Investigator

YASUDA Takashi  Ishinomaki Senshu University, 理工学部, 教授 (90182336)

Project Period (FY) 2008 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2008: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Keywords酸化亜鉛 / ゾル / ゲル法 / 水素 / 電気伝導 / ドナー / アクセプター / ゾル・ゲル / MOCVD / 電荷補償
Research Abstract

Behavior of hydrogen in sol-gel ZnO thin layers has been investigated. Resistivity of ZnO decreases two orders of magnitude by thermal annealing in hydrogen gas atmosphere. This result indicates that diffused hydrogen acts as donor in ZnO. Subsequent annealing in air puts the resistivity back to the previous value, indicating successful control of hydrogen input and output into ZnO by thermal annealing.

Report

(4 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (6 results)

All 2010 2009

All Presentation (6 results)

  • [Presentation] Hydrogen Incorporation Effects into ZnO Thin Films Synthesized by Sol-Gel Method2010

    • Author(s)
      Takashi Yasuda
    • Organizer
      Materials Research Society
    • Place of Presentation
      Boston, USA
    • Year and Date
      2010-11-29
    • Related Report
      2010 Annual Research Report
  • [Presentation] Hydrogen Incorporation Effects into ZnO Thin Films Synthesized by Sol-Gel Method2010

    • Author(s)
      安田隆, 内海武佐志, 鈴木裕真
    • Organizer
      2010 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Related Report
      2010 Final Research Report
  • [Presentation] 亜鉛アセチルアセトナートを用いたMOCVD法ZnOの結晶性 -VI/II比依存性-2009

    • Author(s)
      安田隆
    • Organizer
      応用物理学会
    • Place of Presentation
      富山大学(富山)
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] ゾル・ゲル法で作成したZnO薄膜の水素処理効果2009

    • Author(s)
      安田 隆
    • Organizer
      応用物理学会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-04-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] 亜鉛アセチルアセトナートを用いたMOCVD法ZnOの結晶性VI/II比依存性2009

    • Author(s)
      高橋勇樹, 金野文彰, 安田隆
    • Organizer
      応用物理学会
    • Place of Presentation
      富山
    • Related Report
      2010 Final Research Report
  • [Presentation] ゾル・ゲル法で作成したZnO薄膜の水素処理効果2009

    • Author(s)
      内海武佐志, 鈴木裕真, 安田隆
    • Organizer
      応用物理学会
    • Place of Presentation
      筑波
    • Related Report
      2010 Final Research Report

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Published: 2008-04-01   Modified: 2016-04-21  

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