Fabrication of p-type ZnO using hydroge co-doping
Project/Area Number |
20560014
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
|
Research Institution | Ishinomaki Senshu University |
Principal Investigator |
YASUDA Takashi Ishinomaki Senshu University, 理工学部, 教授 (90182336)
|
Project Period (FY) |
2008 – 2010
|
Project Status |
Completed (Fiscal Year 2010)
|
Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2008: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
|
Keywords | 酸化亜鉛 / ゾル / ゲル法 / 水素 / 電気伝導 / ドナー / アクセプター / ゾル・ゲル / MOCVD / 電荷補償 |
Research Abstract |
Behavior of hydrogen in sol-gel ZnO thin layers has been investigated. Resistivity of ZnO decreases two orders of magnitude by thermal annealing in hydrogen gas atmosphere. This result indicates that diffused hydrogen acts as donor in ZnO. Subsequent annealing in air puts the resistivity back to the previous value, indicating successful control of hydrogen input and output into ZnO by thermal annealing.
|
Report
(4 results)
Research Products
(6 results)