Study on crystalline growth of phase transition oxide and electric field-induced switching phenomena
| Project/Area Number |
20560016
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokai University |
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Principal Investigator |
OKIMURA Kunio Tokai University, 工学部, 教授 (00194473)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 結晶成長 / 機能性酸化物 / バナジウム酸化膜 / スパッタ成膜法 / 相共存 / スイッチングデバイス / 相転移 / 酸化状態制御 / エピタキシャル成長 / ICP支援スパッタ成膜法 / プラズマプロセス / メモリーデバイス |
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| Research Abstract |
In this project, we fabricated planer-type switching device utilizing vanadium dioxide (VO_2) films with metal-insulator transition (MIT) and investigated electric-field induced switching phenomena. We showed fast switching with response time of around 100 ns under electric pulse addition. This phenomenon was considered to be responsible for strong electron correlation effect. The results will be of importance for realizing next generation switching device utilizing phase transition oxide materials.
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Report
(4 results)
Research Products
(34 results)
