Optical and electrical properties of oxide semiconductors and their applications to ultra-violet sensors

• Project/Area Number: 20560018
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Kansai University
• Principal Investigator: SAITOH Tadashi Kansai University, システム理工学部, 教授 (30388417)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2009: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2008: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
• Keywords: 半導体 / 酸化物半導体 / 光デバイス / ソーラーブラインド / 光物性 / 半導体物性 / 物性実験

Research Abstract

We studied on the optical and electrical properties of oxide semiconductors and their applications to solar-blind UV detectors. The photoconductor device made of sol-gel synthesized gallium oxide film operated as a solar blind device showing its sensitivity in a wavelength range of 245-260nm. We also studied .Zr1-_xTi_xO_2as a material whose optical band-gap can be controlled by the molar fraction of Zr and Ti. We showed .Zr1-_xTi_xO_2is promising as solar-blind materials showing that their band-gap can be controlled in the range of 3.6-5.2eV, including the solar-blind range.