| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2008: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
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| Research Abstract |
Characteristics of VHF plasmas with narrow gap under high gas pressure were experimentally and numerically investigated. Simultaneously, the suitable power feeding method-balanced power feed was proposed. The measurement results of the plasma parameters showed that the elctron density was a few times higher and the electron temperature was lower in the case of the balanced power feed. In addition, the simulation results indicated that the plasma potential was lower. As a result of preparation of the microcrystalline silicon thin films, it was considered that the balanced power feed is advantageous for high speed deposition and low ion damage.
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