Study on two dimensional control of orientation selective epitaxial growth of oxide thin films

• Project/Area Number: 20560024
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Iwaki Meisei University
• Principal Investigator: INOUE Tomoyasu Iwaki Meisei University, 科学技術学部, 教授 (60193596)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2009: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2008: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: 薄膜 / 方位選択エピタキシャル成長 / 方位選択成長 / エピタキシ / 反応性スパッタ / 電子ビーム照射 / 吸収電流像 / エピタキシャル成長

Research Abstract

We have studied orientation selective epitaxial (OSE) growth of cerium dioxide (CeO_2) layers on Si(100) substrates, which was enabled by surface potential modification during the growth process. With the aim of two dimensionally controlled OSE, we adopted an electron beam irradiation method. Using absorbed electron current imaging, we controlled the size and position of electron beam irradiated area, which leaded to the first successful results of the spatially varied growth of CeO_2(100) and (110) regions on Si(100) substrates.

Research Products

• [Journal Article] Two Dimensional Control of Electron Beam Induced Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Regions on Si (100) Substrates (2011)
  • Author(s): T. Inoue, N. Igarashi, Y. Kanno, S. Shida
  • Journal Title: Thin Solid Films
  • Peer Reviewed
• [Journal Article] Spatially Varied Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Layers on Si(100) Substrates using Absorbed Electron Imaging System (2011)
  • Author(s): T. Inoue, H. Ohtake, J. Otani, S. Shida
  • Journal Title: いわき明星大学科学技術学部研究紀要 24 Pages: 1-6
• [Journal Article] Two Dimensional Control of Electron Beam Induced Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Regions on Si(100) Substrates (2011)
  • Author(s): T.Inoue, N.Igarashi, Y.Kanno, S.Shida
  • Journal Title: Thin Solid Films Volume: 519 Pages: 5775-5779
  • Peer Reviewed
• [Journal Article] Spatially Varied Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Layers on Si(100) Substrates using Absorbed Electron Imaging System (2011)
  • Author(s): T.Inoue, H.Ohtake, J.Otani, S.Shida
  • Journal Title: いわき明星大学 科学技術学部研究紀要 Volume: 24 Pages: 1-6
• [Journal Article] Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100)/Si(100) Structures using Absorption Electron Imaging System (2009)
  • Author(s): T. Inoue, S. Shida
  • Journal Title: Electrochem.Soc.Trans. 25 Pages: 187-197
  • Peer Reviewed
• [Journal Article] Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100)/Si(100)Structures using Absorption Electron Imaging System (2009)
  • Author(s): T.Inoue, S.Shida
  • Journal Title: Electrochem.Soc.Trans. 25 Pages: 187-197
  • Peer Reviewed
• [Journal Article] Optimization of Growth Parameters in Electron Beam Induced Orientation Selec-tive Epi-taxial Growth of CeO_2(100)/Si(100) Structures (2008)
  • Author(s): T. Inoue, H. Ohtake, J. Otani, S. Shida
  • Journal Title: J.Electrochem.Soc. 155
  • Peer Reviewed
• [Journal Article] Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2 (100) Layers on Si(100)/Si(100) Structures (2008)
  • Author(s): T. Inoue, H. Ohtake, J. Otani, S. Shida
  • Journal Title: Electrochem.Soc.Trans. 13 Pages: 341-351
  • Peer Reviewed
• [Journal Article] Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2 (100) Layers on Si (100) Substrates by Reactive Magnetron Sputtering (2008)
  • Author(s): T. Inoue, Y. Nakata, S. Shida
  • Journal Title: J.Phys.Conf.Ser. 100 Pages: 82014-82014
  • Peer Reviewed
• [Journal Article] Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxial Growth of C_eO_2(100)/Si(100)Structures (2008)
  • Author(s): T. Inoue, H. Ohtake, J. Ota ni, S. Shida
  • Journal Title: J. Electrochem. Soc. 155
  • Peer Reviewed
• [Journal Article] Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxial Growth of C_eO_2(100)/Si(100) Structures (2008)
  • Author(s): T. Inoue, H. Ohtake, J. Ota ni, S. Shida
  • Journal Title: Electrochem. Soc. Trans. 13 Pages: 341-351
  • Peer Reviewed
• [Journal Article] Electron Beam Induced Orientation Selective Epitaxial Growth of C_eO_2(100) Layers on Si(100)Substrates by dc Magnetron Sputtering (2008)
  • Author(s): T. Inoue, Y. Nakata, S. Shida
  • Journal Title: J. Phys. Conf. Ser. 100 Pages: 82014-82014
  • Peer Reviewed
• [Presentation] Si(100)基板上の複合面方位CeO_2 層の形成 (2011)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-26
• [Presentation] Si(100)基板上の複合面方位CeO_2層の形成-基板比抵抗依存性- (2011)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-26
• [Presentation] 電子ビーム誘起方位選択エピタキシャル成長によるSi(100)基板上の複合面方位CeO_2層の形成II (2010)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第71回応用物理学学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-15
• [Presentation] Two Dimensional Control of Electron Beam Induced Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Regions on Si (100) Substrates (2010)
  • Author(s): 井上知泰, 五十嵐永将, 菅野雄樹, 信田重成
  • Organizer: European Mat.Res.Soc.2010 Spring Meeting
  • Place of Presentation: Strasbourg, France
  • Year and Date: 2010-06-08
• [Presentation] Two Dimensional Control of Electron Beam Induced Orientation Selective Epitaxial Growth of (100) and (110) CeO_2 Regions on Si(100) Substrates (2010)
  • Author(s): T.Inoue, N.Igarashi, Y.Kanno, S.Shida
  • Organizer: European Research Society 2010 Spring Meeting
  • Place of Presentation: Strasbourg, France
  • Year and Date: 2010-06-08
• [Presentation] 電子ビーム誘起方位選択エピタキシャル成長によるSi(100)基板上の複合面方位CeO_2層の形成 (2010)
  • Author(s): 井上知泰、五十嵐永将、菅野雄樹、信田重成
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-19
• [Presentation] 電子ビーム誘起方位選択エピタキシャル成長によるSi(100)基板上の複合面方位CeO_2層の形成 (2010)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 神奈川県平塚市、東海大学
  • Year and Date: 2010-03-19
• [Presentation] Effect of Electron Incidence in Epitaxial Growth of CeO_2 (100) Layers on Si (100) Substrates (2009)
  • Author(s): 井上知泰, 信田重成
  • Organizer: 216th Electro chem.Soc.Meeting
  • Place of Presentation: Vienna, Austria
  • Year and Date: 2009-10-05
• [Presentation] 電子ビーム誘起方位選択エピタキシャル成長へのAEI観察の応用II (2009)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第70回応用物理学学術講演会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-09
• [Presentation] 電子ビーム誘起方位選択エピタキシャル成長によるCeO_2(100)/Si(100)構造の形成 (2009)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第69回応用物理学学術講演会
  • Place of Presentation: 富山県富山市、富山大学
  • Year and Date: 2009-09-09
• [Presentation] 電子ビーム誘起方位選択エピタキシャル成長へのAEI観察の応用 (2009)
  • Author(s): 井上知泰、大竹秀幸、大谷純一郎、信田重成
  • Organizer: 第56 回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] 電子ビーム誘起方位選択エピタキシャル成長へのAEI観察の応用 (2009)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 茨城県つくば市、筑波大学
  • Year and Date: 2009-04-01
• [Presentation] 電子ビーム誘起方位選択エピタキシャル成長へのAEI観察の応用 (2009)
  • Author(s): 井上知泰, 信田重成
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2(100)/Si(100)Structrues using Absorption Electron Imaging System (2009)
  • Author(s): T.Inoue, S.Shida
  • Organizer: 216th Electrochemical Society Meeting
  • Place of Presentation: Vienna, Austria
• [Presentation] 電子ビーム誘起方位選択エピタキシャルCeO_2(100)/Si(100)構造の成長条件最適化II (2008)
  • Author(s): 井上知泰、信田重成
  • Organizer: 第69回応用物理学学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-02
• [Presentation] 電子ビーム誘起方位選択エピタキシャルCe02(100)/Si(100)構造の成長条件最適化II (2008)
  • Author(s): 井上知泰, 信田重成
  • Organizer: 第69回応用物理学学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-02
• [Presentation] Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxial Growth of CeO_2 (100) Layers on Si(100)/Si(100) Structures (2008)
  • Author(s): 井上知泰, 大竹秀幸, 大谷純一郎, 信田重成
  • Organizer: 213th Electrochem.Soc.Meeting
  • Place of Presentation: Phoenix, AZ USA
  • Year and Date: 2008-05-20
• [Presentation] Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxial Growth of C_eO_2(100)/Si(100) Structures (2008)
  • Author(s): T. Inoue, H. Ohtake, J. Otani, S. Shida
  • Organizer: 213th Electrochemical Society Meeting
  • Place of Presentation: Phoenix, AZ USA
  • Year and Date: 2008-05-20
• [Book] Oxide Thin Film Technology Kelara, India (2010)
  • Author(s): T. Inoue, T. Chikyow
  • Total Pages: 174
  • Publisher: Transworld Research Network, Trivandrum
• [Book] Orientation Selectivity Control by Surface Potential Modification in Oxide Thin Film Epitaxial Growth New York (2009)
  • Author(s): T. Inoue
  • Publisher: Nova Science Publishers Inc.
• [Book] Recent Advances in Dielectric Materials(全19章の内、第4章34頁分を執筆) (2009)
  • Author(s): T.Inoue
  • Total Pages: 792
  • Publisher: Nova Science Publishers Inc., New York
• [Remarks] ホームページ等
  • URL: http://www.iwakimu.ac.jp/research/kaken
• [Remarks]
  • URL: http://www.iwakimu.ac.jp/research/kaken
• [Patent(Industrial Property Rights)] Semiconductor device and manufactur-ing method thereof (2008)
  • Inventor(s): Ichiro Mizushima, Tomoyasu Inoue
  • Industrial Property Rights Holder: Toshiba Corp.
  • Filing Date: 2008-01-10
  • Overseas
• [Patent(Industrial Property Rights)] 半導体装置及びその製造方法 (2007)
  • Inventor(s): 水島一郎、井上知泰
  • Industrial Property Rights Holder: (株)東芝
  • Patent Publication Number: 2008-160086
  • Filing Date: 2007-11-22
• [Patent(Industrial Property Rights)] 半導体装置及びその製造方法 (2006)
  • Inventor(s): 水島一郎、井上知泰
  • Industrial Property Rights Holder: (株)東芝
  • Patent Publication Number: 2008-160086
  • Filing Date: 2006-11-30