Study on two dimensional control of orientation selective epitaxial growth of oxide thin films
| Project/Area Number |
20560024
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Thin film/Surface and interfacial physical properties
|
|---|
| Research Institution | Iwaki Meisei University |
|---|
Principal Investigator |
INOUE Tomoyasu Iwaki Meisei University, 科学技術学部, 教授 (60193596)
|
|---|
| Project Period (FY) |
2008 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2008: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
|
|---|
| Keywords | 薄膜 / 方位選択エピタキシャル成長 / 方位選択成長 / エピタキシ / 反応性スパッタ / 電子ビーム照射 / 吸収電流像 / エピタキシャル成長 |
|---|
| Research Abstract |
We have studied orientation selective epitaxial (OSE) growth of cerium dioxide (CeO_2) layers on Si(100) substrates, which was enabled by surface potential modification during the growth process. With the aim of two dimensionally controlled OSE, we adopted an electron beam irradiation method. Using absorbed electron current imaging, we controlled the size and position of electron beam irradiated area, which leaded to the first successful results of the spatially varied growth of CeO_2(100) and (110) regions on Si(100) substrates.
|
Report
(4 results)
Research Products
(38 results)
