| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2008: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Research Abstract |
Interfaces between metal electrodes and oxides used for electronics applications such as insulating films for next-generation LSIs and transparent conducting oxide films for solar cells, are one of the crucial factors that determine the performance of devices. Such oxides are composed of oxygen O and metal element A. At the interface between oxide AO and metal B, two types of interface bonding, A-O-B and O-A-B are possible. In this study, it has been revealed that the electric property of a device is completely difference due to the difference in the type of interface bonding at one atomic layer thickness. Furthermore, a method to predict thermally stable interface bonding at different oxides and metals are proposed.
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