| Project/Area Number |
20560066
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Materials/Mechanics of materials
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| Research Institution | Saitama University |
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Principal Investigator |
ARAI Yoshio Saitama University, 大学院・理工学研究科, 教授 (70175959)
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| Co-Investigator(Kenkyū-buntansha) |
OZASA Kazunari 理化学研究所, 前田バイオ工学研究室, 専任研究員 (10231234)
ARAKI Wakako 埼玉大学, 大学院・理工学研究科, 准教授 (40359691)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 半導体量子ドット / ナノスケール歪測定 / ナノスケール押込み / 歪ハミルトニアン / 発光強度 |
|---|
| Research Abstract |
An improvement in the estimation of the location of embedded InGaAs/GaAs quantum dots (QDs) by using a domed-apex probe to perform the low- temperature (10 K) photoluminescence (PL) measurement during a nanoprobe scan was established. Fine PL peak from individual QDs was enhanced with the nanoprobe-induced strain. Tracing the PL emissions of single QD with the movement of the probe position in the scan, the locations of some of observed QDs were obtained directly from the scan results, at where the PL peak energies of those QDs achieved maximum values.
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