| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2009: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2008: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Research Abstract |
This study focuses on development of a power converter capable of high-dv/dt switching operation and its peripheral circuit technology, assuming next-generation ultra high-speed switching devices such as SiC-MOSFETs. As a result, a novel topology that drives all switching devices on a common potential level was proposed, and a multi-core transformer based isolated power supply was developed, which reduces common mode noise current through the gate drive circuit down to 1/5.
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