Application of semiconductor quantum dots with organic thin film on silicon substrates to high conversion-efficiency solar cells
Project/Area Number |
20560291
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
|
Research Institution | The University of Electro-Communications |
Principal Investigator |
YAMAGUCHI Koichi The University of Electro-Communications, 大学院・情報理工学研究科, 教授 (40191225)
|
Project Period (FY) |
2008 – 2010
|
Project Status |
Completed (Fiscal Year 2010)
|
Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2008: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
|
Keywords | 量子ドット / 太陽電池 / 分子線エピタキシー / InAs / GaAs / Ge / Sb / 量子ドッド / Si |
Research Abstract |
InAs/GaAs quantum dots (QDs) were fabricated on Ge(001) substrates by molecular beam epitaxy. High-density InAs QDs with 7×1010 cm-2 were successfully obtained by using Sb-containing GaAs buffer layers. Optical absorption of long wavelength light in the InAs QD layers provided additional photocurrent. Organic thin-films on the InAs QD layers played a role for surface passivation. These results are expected for development of solar cells with high conversion efficiency in future.
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Report
(4 results)
Research Products
(72 results)