• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Application of semiconductor quantum dots with organic thin film on silicon substrates to high conversion-efficiency solar cells

Research Project

Project/Area Number 20560291
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionThe University of Electro-Communications

Principal Investigator

YAMAGUCHI Koichi  The University of Electro-Communications, 大学院・情報理工学研究科, 教授 (40191225)

Project Period (FY) 2008 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2008: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Keywords量子ドット / 太陽電池 / 分子線エピタキシー / InAs / GaAs / Ge / Sb / 量子ドッド / Si
Research Abstract

InAs/GaAs quantum dots (QDs) were fabricated on Ge(001) substrates by molecular beam epitaxy. High-density InAs QDs with 7×1010 cm-2 were successfully obtained by using Sb-containing GaAs buffer layers. Optical absorption of long wavelength light in the InAs QD layers provided additional photocurrent. Organic thin-films on the InAs QD layers played a role for surface passivation. These results are expected for development of solar cells with high conversion efficiency in future.

Report

(4 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (72 results)

All 2011 2010 2009 2008 Other

All Journal Article (10 results) (of which Peer Reviewed: 10 results) Presentation (56 results) Book (3 results) Remarks (2 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Time-Resolved X-ray Diffraction Measurements of High-Density InAs Quantum-Dots on Sb/GaAs Layers and the Suppression of Coalescence by Sb-Irradiated Growth Interruption2010

    • Author(s)
      N.Kakuda, T.Kaizu, M.Takahasi, S.Fujikawa, K.Yamaguchi
    • Journal Title

      Jpn.J.Appl.Phys. 49

      Pages: 0956021-4

    • NAID

      40017294740

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Stacking Growth of In-Plane InAs Quantum-Dot Superlattices on GaAsSb /GaAs (001) for Solar Cell Applications2010

    • Author(s)
      T.Inaji, J.Ohta, K.Yamaguchi
    • Journal Title

      35^<th> IEEE Photovoltaic Specialists Conference (PVSC)

      Pages: 1885-8

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Time-Resolved X-ray Diffraction Measurements of High-Density InAs Quantum-Dots on Sb/GaAs Layers and the Suppression of Coalescence by Sb-Irradiated Growth Interruption2010

    • Author(s)
      N.Kakuda, T.Kaizu, M.Takahasi, S.Fujikawa, K.Yamaguchi
    • Journal Title

      Jpn.J.Appl.Phys

      Volume: 49

    • NAID

      40017294740

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Stacking growth of in-plane InAs quantum-dot superlattices on GaAsSb/GaAs(001) for solar cell applications2010

    • Author(s)
      T.Inaji, J.Ohta, K.Yamaguchi
    • Journal Title

      2010 35th IEEE Photovoltaic Specialists Conference (PVSC)

      Pages: 1885-8

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE2008

    • Author(s)
      N.Kakuda, T.Yoshida,K.Yamaguchi
    • Journal Title

      Appl.Surf.Sci. 254

      Pages: 8050-8053

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Uniform formation of high-density InAs quantum dots by InGaAs capping growth2008

    • Author(s)
      S.Tonomura, K.Yamaguchi
    • Journal Title

      J.Appl.Phys. 104

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE2008

    • Author(s)
      N. Kakuda, T. Yoshida, K. Yamaguchi
    • Journal Title

      Applied Surface Science 254

      Pages: 8050-8053

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Uniform formation of high-density InAs quantum dots by In GaAs capping growth2008

    • Author(s)
      S. Tonomura, K. Yamaguchi
    • Journal Title

      Journal of Applied Physics 104

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] In situ determination of Sb distribution in Sb/GaAs(00l)layer for high-density InAs quantum dot growth2008

    • Author(s)
      T. Kaizu, M. Takahasi, K. Yamaguchi, J. Mizuki
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 3436-3439

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Generation of highly circularly polarized light from uniform InAs/GaAs quantum dots2008

    • Author(s)
      K. Kusunoki, N. Tsukiji, T. Umi, A. Tackeuchi, K. Yamaguchi
    • Journal Title

      Physica Status Solidi (C) 5

      Pages: 378-381

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Presentation] 面内超高密度InAs最子ドットの太陽電池への応用2011

    • Author(s)
      藤田浩輝, 山本和輝, 江口陽亮, 山口浩一
    • Organizer
      2011年(平成23年)春季第58回応用物理学関係連合講演会予稿集
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaAsSbバッファ層上のInAs騒子ドット成長における面内超高密度化2011

    • Author(s)
      船原一祥, 太田潤, 山口浩一
    • Organizer
      2011年(平成23年)春季第58回応用物理学関係連合講演会予稿集
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2010 Annual Research Report
  • [Presentation] 面内超高密度InAs.量子ドット構造におけるキャリアの空間分離とその長寿命化2011

    • Author(s)
      太田潤, 山口浩一
    • Organizer
      2011年(平成23年)春季第58回応用物理学関係連合講演会予稿集
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2010 Annual Research Report
  • [Presentation] InAs/GaAs量子ドットの自己形成過程におけるGa導入効果2011

    • Author(s)
      サブトラエデス, 山口浩一
    • Organizer
      2011年(平成23年)春季第58回応用物理学関係連合講演会予稿集
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2010 Annual Research Report
  • [Presentation] 量子ドット型太陽電池へ向けた量子ドットの面内超高密度化と長キャリア寿命化2010

    • Author(s)
      山口浩一
    • Organizer
      第6回量子ナノ材料セミナー
    • Place of Presentation
      物質材料研究機構(招待講演)
    • Year and Date
      2010-10-10
    • Related Report
      2010 Annual Research Report
  • [Presentation] 量子ドット型太陽電池へ向けた量子ドットの面内超高密度化と長キャリア寿命化2010

    • Author(s)
      山口浩一
    • Organizer
      第6回量子ナノ材料セミナー
    • Place of Presentation
      (招待講演)物質材料研究機構
    • Year and Date
      2010-10-01
    • Related Report
      2010 Final Research Report
  • [Presentation] 量子ドット超格子構造太陽電池の研究開発(量子ドットの高均一・高密度化技術)2010

    • Author(s)
      太田潤, 山口浩一
    • Organizer
      NEDO新エネルギー技術開発成果報告会2010, PV1-01-05
    • Place of Presentation
      東京国際フォーラム
    • Year and Date
      2010-07-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] 光デバイス応用に向けたInAs量子ドットの高密度・高均一成長2010

    • Author(s)
      山口浩一, 角田直輝, 築地伸和, 関口修司, 太田潤, 海津利行, 高橋正光
    • Organizer
      応用物理学会結晶工学分科会第132回研究会
    • Place of Presentation
      (招待講演)学習院大学
    • Year and Date
      2010-04-23
    • Related Report
      2010 Final Research Report
  • [Presentation] 光デバイス応用に向けたInAs量子ドットの高密度・高均-成長2010

    • Author(s)
      山口浩一, 角田直輝, 築地伸和, 関口修司, 太田潤, 海津利行, 高橋正光
    • Organizer
      応用物理学会結晶工学分科会第132回研究会
    • Place of Presentation
      学習院大学(招待講演)
    • Year and Date
      2010-04-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] MBE Growth of InAs/GaAs Quantum Dots on Ge(001) Substrates2010

    • Author(s)
      K.Hirano, T.Seo, K.Minagawa, K.Yamaguchi
    • Organizer
      16th International Conference on Crystal Growth
    • Place of Presentation
      Beijing.
    • Related Report
      2010 Final Research Report
  • [Presentation] (Invited) Self-Formation Control of GaAs/InAs Quantum Dots for Solar Cells with Intermediate Bands2010

    • Author(s)
      K.Yamaguchi, N.Tsukiji, S.Sekiguchi, T.Seo, J.Ohta T.Inaji
    • Organizer
      The Japan-China Workshop on Sensitized Solar Cells
    • Place of Presentation
      Chofu.
    • Related Report
      2010 Final Research Report
  • [Presentation] Stacking Growth of In-Plane InAs Quantum-Dot Superlattices on GaAsSb/GaAs (001) for Solar Cell Applications2010

    • Author(s)
      T.Inaji, J.Ohta, K.Yamaguchi
    • Organizer
      35th IEEE Photovoltaic Specialists Conference
    • Place of Presentation
      Honolulu
    • Related Report
      2010 Annual Research Report
  • [Presentation] MBE Growth of InAs/GaAs Quantum Dots on Ge(001) Substrates2010

    • Author(s)
      K.Hirano, T.Seo, K.Minagawa, K.Yamaguchi
    • Organizer
      16th International Conference on Crystal Growth
    • Place of Presentation
      Beijing
    • Related Report
      2010 Annual Research Report
  • [Presentation] Sb-Mediated Self-Formation of Ultra-High Density InAs Quantum-Dotson GaAs(001)2010

    • Author(s)
      J.Ohta, K.Sakamoto, K.Yamaguchi
    • Organizer
      16th International Conference on Molecular Beam Epitaxy (MBE 2010)
    • Place of Presentation
      Berlin
    • Related Report
      2010 Annual Research Report
  • [Presentation] Self-Formation of In-Plane InAs QD Superlattices with Long Carrier Lifetime2010

    • Author(s)
      J.Ohta, H.Fujita, K.Yamaguchi
    • Organizer
      The 3rd International Symposium on InnovativeSolar Cells
    • Place of Presentation
      Tokyo
    • Related Report
      2010 Annual Research Report
  • [Presentation] 高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定(3)2010

    • Author(s)
      山本和輝, 角田直輝, 海津利行, 高橋正光, 藤川誠司, 山口浩一
    • Organizer
      2010年(平成22年)秋季第71回応用物理学会学術講演会予稿集
    • Place of Presentation
      長崎大学
    • Related Report
      2010 Annual Research Report
  • [Presentation] 面内超高密度InAs最子ドットの自己形成とそのキャリア寿命時間測定2010

    • Author(s)
      太田潤, 山口浩一
    • Organizer
      2010年(平成22年)秋季第71回応用物理学会学術講演会予稿集
    • Place of Presentation
      長崎大学
    • Related Report
      2010 Annual Research Report
  • [Presentation] 自己形成InAs墨子ドットの高密度・高均一化2010

    • Author(s)
      金丸豊, 角田直輝, 山口浩一
    • Organizer
      2010年(平成22年)秋季第71回応用物理学会学術講演会予稿集
    • Place of Presentation
      畏崎大学
    • Related Report
      2010 Annual Research Report
  • [Presentation] (Invited) Self-Formation Control of GaAs/InAs Quantum Dots for Solar Cells with Intermediate Bands2010

    • Author(s)
      K.Yamaguchi, N.Tsukiji, S.Sekiguchi, T.Seo, J.Ohta, T.Inaji
    • Organizer
      The Japan-China Workshop on Sensitized Solar Cells
    • Place of Presentation
      Chofu
    • Related Report
      2009 Annual Research Report
  • [Presentation] ナノフォトニクズ半導体量子ドットの自己形成制御2010

    • Author(s)
      山口浩一
    • Organizer
      2010年 (平成22年) 春季第57回応用物理学関係連合講演会シンポジウム講演「ナノフォトニクスを支えるナノ加工」
    • Place of Presentation
      東海大学
    • Related Report
      2009 Annual Research Report
  • [Presentation] InAs量子ドット面内超格子構造の積層成長2010

    • Author(s)
      稲次敏彦, 関口修司, 太田潤, 山口浩一
    • Organizer
      2010年 (平成22年) 春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Related Report
      2009 Annual Research Report
  • [Presentation] InAs量子ドット面内超格子構造の自己形成2010

    • Author(s)
      太田潤, 角田直輝, 山口浩一
    • Organizer
      2010年 (平成22年) 春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Related Report
      2009 Annual Research Report
  • [Presentation] 太陽電池用高密度InAs量子ドットのGe基板上への成長2009

    • Author(s)
      瀬尾崇志, 平野和浩, 山口浩一
    • Organizer
      2009年 (平成21年) 電気通信大学・東京農工大学第6回合同シンポジウム「ナノ未来材料とコヒーレント光科学」合同シンポジウム
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-12-05
    • Related Report
      2009 Annual Research Report
  • [Presentation] 高密度InAs量子ドットの時間分解X線回折測定とSb照射成長中断法による高品質化2009

    • Author(s)
      角田直輝, 山口浩一, 海津利行, 高橋正光, 藤川誠司
    • Organizer
      2009年 (平成21年) 電気通信大学・東京農工大学第6回合同シンポジウム「ナノ未来材料とコヒーレント光科学」合同シンポジウム
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-12-05
    • Related Report
      2009 Annual Research Report
  • [Presentation] 半導体量子ドットの自己形成制御2009

    • Author(s)
      山口浩一
    • Organizer
      2009年 (平成21年) 電気通信大学・東京農工大学第6回合同シンポジウム「ナノ未来材料とコヒーレント光科学」合同シンポジウム
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-12-05
    • Related Report
      2009 Annual Research Report
  • [Presentation] 自己形成量子ドットの精密制御法の展開2009

    • Author(s)
      山口浩一
    • Organizer
      第21回ナノフォトニックスセミナー
    • Place of Presentation
      (招待講演)東京大学
    • Year and Date
      2009-10-22
    • Related Report
      2010 Final Research Report
  • [Presentation] 自己形成量子ドットの精密制御法の展開2009

    • Author(s)
      山口浩一
    • Organizer
      第21回ナノフォトニックスセミナー
    • Place of Presentation
      東京大学
    • Year and Date
      2009-10-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] Sb導入InAs/GaAs系量子ドットの自己形成制御-均一性、サイズ、密度はどこまで制御できるか-2009

    • Author(s)
      山口浩一
    • Organizer
      第5回量子ナノ材料セミナー
    • Place of Presentation
      (招待講演)埼玉大学
    • Year and Date
      2009-07-29
    • Related Report
      2010 Final Research Report
  • [Presentation] Sb導入InAs/GaAs系量子ドットの自己形成制御-均一性、サイズ、密度はどこまで制御できるか-2009

    • Author(s)
      山口浩一
    • Organizer
      第5回量子ナノ材料セミナー
    • Place of Presentation
      埼玉大学
    • Year and Date
      2009-07-29
    • Related Report
      2009 Annual Research Report
  • [Presentation] InAs量子ドットのSb導入MBE成長過程における時間分解X線回折測定2009

    • Author(s)
      山口浩一, 角田直輝, 海津利行, 高橋正光, 藤川誠司
    • Organizer
      文部科学省ナノテクノロジー・ネットワーク/重点ナノテクノロジー支援放射光利用研究成果報告会「ナノテクノロジー放射光利用研究の最前線2008
    • Place of Presentation
      つくば
    • Year and Date
      2009-05-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fabrication of High-density and High-uniformity InAs Quantum Dots on GaAs(001) and Ge(001) Substrates for Solar Cell Applications2009

    • Author(s)
      N.Kakuda, S.Sekiguchi, T.Seo, K.Yamaguchi
    • Organizer
      The 2nd International Symposium on Innovative Solar Cells
    • Place of Presentation
      Tsukuba.
    • Related Report
      2010 Final Research Report
  • [Presentation] Density Control of Self-Assembled InAs/GaAs Quantum Dots2009

    • Author(s)
      K.Yamaguchi, N.Kakuda, S.Sekiguchi, Y.Kanemaru
    • Organizer
      The 2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano-2009)
    • Place of Presentation
      (Invited) Anan.
    • Related Report
      2010 Final Research Report
  • [Presentation] MBE Growth of InAs/GaAs Quantum Dots on Ge(001) Substrates2009

    • Author(s)
      瀬尾崇志, 平野和浩, 山口浩一
    • Organizer
      The 2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano-2009)
    • Place of Presentation
      Anan.
    • Related Report
      2010 Final Research Report
  • [Presentation] Ge(001)基板上へのInAs/GaAs系量子ドットのMBE成長2009

    • Author(s)
      瀬尾崇志, 平野和浩, 山口浩一
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Related Report
      2010 Final Research Report
  • [Presentation] Uniform formation of high-density InAs quanutum dots by using nanoholes2009

    • Author(s)
      K.Yamaguchi, N.Kakuda, S.Sekiguchi, K.Yamamoto, Y.Kanemaru
    • Organizer
      International Symposium on Innovative Solar Cells 2009.
    • Place of Presentation
      Tokyo.
    • Related Report
      2010 Final Research Report
  • [Presentation] Real-time X-ray diffraction measurements during Sb-mediated SK growth and annealing of InAs quantum dots2009

    • Author(s)
      T.Kaizu, N.Kakuda, M.Takahasi, S.Fujikawa, K.Yamaguchi
    • Organizer
      The 14th International Conference on Modulated Semiconductor Structures (MSS-14)
    • Place of Presentation
      Kobe
    • Related Report
      2009 Annual Research Report
  • [Presentation] MBE Growth of InAs/GaAs Quantum Dots on Ge(001) Substrates2009

    • Author(s)
      T.Seo, K.Hirano, K.Yamaguchi
    • Organizer
      2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano-2009)
    • Place of Presentation
      Anan
    • Related Report
      2009 Annual Research Report
  • [Presentation] (Invited) Density Control of Self-Assembled InAs/GaAs Quantum Dots2009

    • Author(s)
      K.Yamaguchi, N.Kakuda, S.Sekiguchi, Y.Kanemaru
    • Organizer
      The 2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano-2009)
    • Place of Presentation
      Anan
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fabrication of High-density and High-uniformity InAs Quantum Dots on GaAs(001) and Ge(001) Substrates for Solar Cell Applications2009

    • Author(s)
      N.Kakuda, S.Sekiguchi, T.Seo, K.Yamaguchi
    • Organizer
      The 2nd International Symposium on Innovative Solar Cells
    • Place of Presentation
      Tsukuba
    • Related Report
      2009 Annual Research Report
  • [Presentation] 自己形成GaAsナノホールを用いた近接積層InAs量子ドットの発光特性2009

    • Author(s)
      築地伸和, 山口浩一
    • Organizer
      2009年 (平成21年) 秋季第70回応用物珪学会学術講演会
    • Place of Presentation
      富山大学
    • Related Report
      2009 Annual Research Report
  • [Presentation] InAs量子ドット上の自己形成GaAsナノホールのモンテカルロシミュレーション2009

    • Author(s)
      関口修司, 山口浩一
    • Organizer
      2009年 (平成21年) 秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Related Report
      2009 Annual Research Report
  • [Presentation] 積層InAs量子ドットの熱処理効果2009

    • Author(s)
      廣瀬真幸, 山口浩一
    • Organizer
      2009年 (平成21年) 秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Related Report
      2009 Annual Research Report
  • [Presentation] Ge (001) 基板上へのInAs/GaAs系量子ドットのMBE成長 (2)2009

    • Author(s)
      瀬尾崇志, 平野和浩, 山口浩一
    • Organizer
      2009年 (平成21年) 秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Related Report
      2009 Annual Research Report
  • [Presentation] 高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定 (2)2009

    • Author(s)
      角田直輝, 海津利行, 高橋正光, 藤川誠司, 山口浩一
    • Organizer
      2009年 (平成21年) 秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Related Report
      2009 Annual Research Report
  • [Presentation] Uniform formation of high-density InAs quanutum dots by using nanoholes2009

    • Author(s)
      K. Yamaguchi, N. Kakuda, S. Sekiguchi, K. Yamamoto, Y. Kanemaru
    • Organizer
      International Symposium on Innovative Solar Cells 2009
    • Place of Presentation
      Tokyo
    • Related Report
      2008 Annual Research Report
  • [Presentation] 自己形成InAs量子ドットの成長中断におけるAs-Sb照射交換の影響2009

    • Author(s)
      山本和輝, 山口浩一
    • Organizer
      平成21年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] 高密度InAs量子ドットのcoarsening過程2009

    • Author(s)
      金丸豊, 角田直輝, 山口浩一
    • Organizer
      平成21年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] 断続供給法による低密度InAs量子ドットの自己形成制御2009

    • Author(s)
      パッチャカパットポンラチェット, 関口修司, 山口浩一
    • Organizer
      平成21年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] Ge(001)基板上へのInAs/GaAs系量子ドットのMBE成長2009

    • Author(s)
      瀬尾崇志, 平野和浩, 山口浩一
    • Organizer
      平成21年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] 高密度InAs量子ドットのSb照射成長中断における時間分解X線回折測定2009

    • Author(s)
      角田直輝, 海津利行, 高橋正光, 山口浩一
    • Organizer
      平成21年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] InAs量子ドットのSb導入MBE成長過程における時間分解X線回折測定2008

    • Author(s)
      山口浩一, 高橋正光, 海津利行, 角田直輝, 水木純一郎
    • Organizer
      文部科学省ナノテクノロジー総合支援プロジェクト平成19年度放射光グループ研究成果報告会
    • Place of Presentation
      大阪
    • Year and Date
      2008-05-07
    • Related Report
      2008 Annual Research Report
  • [Presentation] Annealing properties of InAs quantum dots grown on GaAsSb/GaAs buffer layers2008

    • Author(s)
      M. Hirose, Jiaying Hu, K. Yamaguchi
    • Organizer
      The 2nd IEEE Nanotechnology Materials and Devices Conference (NMDC 2008)
    • Place of Presentation
      Kyoto
    • Related Report
      2008 Annual Research Report
  • [Presentation] Narrow photoluminescence spectra of closely stacked InAs quantum dots with high dot density on GaSb/GaAs(00l)2008

    • Author(s)
      S. Sekiguchi, N. Tsukiji, K. Yamaguchi
    • Organizer
      The 5th International Conference on Semiconductor Quantum Dots (QD-2008)
    • Place of Presentation
      Gyeongju
    • Related Report
      2008 Annual Research Report
  • [Presentation] 自己形成GaAsナノホールを用いたGaSb/GaAs層上近接積層InAs量子ドットの発光特性改善2008

    • Author(s)
      関口修司, 山口浩一
    • Organizer
      平成20年秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] Sb照射InAs量子ドット上のGaAs薄膜成長2008

    • Author(s)
      村脇史敏, 山口浩一
    • Organizer
      平成20年秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] GaAsSb/GaAs層上高密度InAs量子ドットのcoarsening過程2008

    • Author(s)
      角田直輝, 山口浩一
    • Organizer
      平成20年秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Related Report
      2008 Annual Research Report
  • [Book] 量子ドットエレクトロニクスの最前線2011

    • Author(s)
      山口浩一共著
    • Publisher
      エヌ・ティー・エス
    • Related Report
      2010 Annual Research Report 2010 Final Research Report
  • [Book] Handbook of Self-Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics (Chapter 8)2008

    • Author(s)
      K. Yamaguchi, S. Tsukamoto, K. Matsuda
    • Total Pages
      22
    • Publisher
      Elsevier Inc
    • Related Report
      2008 Annual Research Report
  • [Book] Handbook of Self-Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics, Chapter 8

    • Author(s)
      K.Yamaguchi, S.Tsukamoto, K.Matsuda
    • Total Pages
      22
    • Publisher
      Elsevier Inc
    • Related Report
      2010 Final Research Report
  • [Remarks] ホームページ等

    • URL

      http://www.crystal.ee.uec.ac.jp/

    • Related Report
      2010 Final Research Report
  • [Remarks]

    • URL

      http://www.crystal.ee.uec.ac.jp/top.html

    • Related Report
      2010 Annual Research Report
  • [Patent(Industrial Property Rights)] 量子半導体装置およびその製造方法2010

    • Inventor(s)
      山口浩一
    • Industrial Property Rights Holder
      国立大学法人電気通信大学
    • Acquisition Date
      2010-04-30
    • Related Report
      2010 Final Research Report

URL: 

Published: 2008-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi