A study on the origin of localized states in Si thin films by photothermal bending spectroscopy
| Project/Area Number |
20560294
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Gifu University |
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Principal Investigator |
YOSHIDA Norimitsu Gifu University, 工学研究科, 准教授 (70293545)
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| Co-Investigator(Kenkyū-buntansha) |
NONOMURA Shuichi 岐阜大学, 工学研究科, 教授 (80164721)
NATSUHARA Hironori 岐阜大学, 工学部, 助教 (30444334)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2008: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 電気・電子材料 / 物性実験 |
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| Research Abstract |
The origin of an optical absorption observed at 1.4eV by photothermal bending spectroscopy in Si thin films prepared near the transition region of deposition conditions from amorphous Si to crystalline phase has been studied. From experimental results that the absorption decreases by light illumination, it is concluded that the origin of the absorption could be Si crystallites with a grain size under 4nm.
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Report
(4 results)
Research Products
(7 results)
