Improvement of insulator/ Germanium interface by surface passivation for high-mobility Ge based transistor.
| Project/Area Number |
20560300
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
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| Project Period (FY) |
2008 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2008: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Keywords | 作成・評価技術 / 量子化学計算 / 表面 / Ge / 分子軌道計算 / 表面・界面物性 / High-k / 表面反応 / 表面処理 / 硫化アンモニウム / 作製・評価技術 / HCl |
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| Research Abstract |
Germanium has been attracting much attention for high-performance ULSI, because it has higher electron and hole mobilities than Si. However, Ge-based MIS transistors still have the problems such as a high interface state density. So, the passivation of the Ge surface has been studied to reduce the interface state density. The theoretical analysis was carried out to search for alternative terminal materials on the Ge surface, and the passivation effects have been characterized experimentally. As a result, it is shown that F, Cl and S treatments can reduce the interface state density.
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Report
(6 results)
Research Products
(38 results)
