Research of dislocation-free silicon-carbide growth
| Project/Area Number |
20560301
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nara Institute of Science and Technology |
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Principal Investigator |
HATAYAMA Tomoaki Nara Institute of Science and Technology, 物質創成科学研究科, 助教 (90304162)
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| Project Period (FY) |
2008 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2008: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | 炭化ケイ素 / エッチング / 転位 / シリコンカーバイド / 半導体 / 炭化珪素 |
|---|
| Research Abstract |
A surface modification and lateral growth were applied to reduce the dislocation in the SiC grown layers. When a SiC layer was grown on the surface modified substrate, the basal plane dislocations were converted to the threading dislocations. The dislocation density in SiC could be reduced at the lateral growth area.
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Report
(4 results)
Research Products
(33 results)
