| Project/Area Number |
20560308
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nihon University |
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Principal Investigator |
SHIMIZU Hirofumi Nihon University, 工学部, 教授 (10318371)
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| Co-Investigator(Kenkyū-buntansha) |
IKEDA Masanori 日本大学, 工学部, 准教授 (10222902)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2008: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 作成 / 評価技術 / 表面光電圧 / 多結晶シリコン薄膜 / 結晶性評価 / フラットパネルディスプレイ / 金属誘起電荷 / 酸化膜成長 / 金属不純物 / 表面ポテンシャル / 単結晶シリコン |
|---|
| Research Abstract |
A novel instrument based on an alternating current surface photovoltage (AC SPV) was successfully developed to evaluate a crystallinity of Si poly-crystal thin film nondestructively. Simultaneously, irregular AC SPV characteristics were clarified for thermally oxidized Au-, Fe-, and Cr-contaminated n-type Si single crystal surfaces, respectively. The effects of these metal impurities on thermal oxide growth of Si surfaces were also investigated.
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