| Project/Area Number |
20560326
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
|
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| Research Institution | Tottori University |
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Principal Investigator |
ICHINO Kunio Tottori University, 大学院・工学研究科, 准教授 (90263483)
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| Co-Investigator(Kenkyū-buntansha) |
OHMI Koutoku 鳥取大学, 大学院・工学研究科, 准教授 (90243378)
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| Project Period (FY) |
2008 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2008: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 光デバイス・光回路 / 薄膜蛍光体 / エレクトロルミネッセンス / ZnS / 蛍光体薄膜 / p型伝導 |
|---|
| Research Abstract |
In order to fabricate wide-area inorganic electroluminescence devices driven by current injection, effective carrier injection structures and improvement of the emission layer have been studied. For the former, although effective carrier injection structures are not actually realized, positive results have been obtained in doping single-crystal ZnS with N-acceptor and silver for the realization of homo-pn-junction. For the latter, optical properties of poly-crystal ZnS doped with copper have been improved by co-doping of aluminum.
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