Study on nanocrystalline silicon planar cathodes with low emission divergence and narrow electron energy spread

• Project/Area Number: 20560333
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Hachinohe Institute of Technology
• Principal Investigator: SHIMAWAKI Hidetaka 八戸工業大学, 大学院・工学研究科, 教授 (80241587)
• Co-Investigator(Kenkyū-buntansha): MIMURA Hidenori 静岡大学, 電子工学研究所, 教授 (90144055)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2008: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
• Keywords: 微小冷陰極 / トンネル電子放射 / エミッションプロファイル / エネルギー分析 / シリコン微結晶 / 真空ナノエレクトロニクス / トンネル放射 / 平面型冷陰極

Research Abstract

We investigated emission uniformity from the planar cathodes based on nc-Si prepared by pulsed Nd : YAG laser ablation. Distributions of electron emission showed strong dependence on thin metal morphology. The emission occurred at limited parts of the emission area for the cathode with discontinuous metal and the whole for the cathode with continuous metal due to series resistance effects. Continuity and conductivity of thin metal film are important for uniform and high directional emission from the planar cathodes.

Research Products

• [Journal Article] Evaluation of emission uniformity of nanocrystalline silicon planar cathodes (2010)
  • Author(s): H. Shimawaki, K. Murakami, Y. Neo, H. Mimura, F. Wakaya, and M. Takai
  • Journal Title: J. Vac. Sci. Technol Volume: B28
  • Peer Reviewed
• [Journal Article] Enhanced Electron Emission from nc-Si MOS Cathode by Laser Irradiation (2010)
  • Author(s): H. Shimawaki, Y. Neo, H. Mimura, F. Wakaya, and M. Takai
  • Journal Title: Proc. of the 17th Int. Display Workshops Pages: 2001-2004
• [Journal Article] Photo-assisted Electron Emission from MOS-type Cathode Based on Nanocrystalline Silicon (2010)
  • Author(s): H. Shimawaki, Y. Neo, H. Mimura, F. Wakaya, and M. Takai
  • Journal Title: Tech. Digest of the 23rd Int. Vacuum Nanoelectronics Conf. Pages: 74-75
  • Peer Reviewed
• [Journal Article] Electron Emission from Planar-type Cathodes based on Oxidized Nanocrystalline Silicon (2010)
  • Author(s): H. Shimawaki, K. Murakami, Y. Neo, H. Mimura, F. Wakaya, and M. Takai
  • Journal Title: Proc. of the 34th Workshop on Compound Semiconductor Devices and Integrated Circuits Pages: 67-68
• [Journal Article] Evaluation of emission uniformity of nanocrystalline silicon planar cathodes (2010)
  • Author(s): H.Shimawaki
  • Journal Title: J.Vac.Sci.Technol.B Volume: 28
  • Peer Reviewed
• [Journal Article] Enhanced Electron Emission from nc-Si MOS Cathode by Laser Irradiation (2010)
  • Author(s): H.Shimawaki
  • Journal Title: Proc.of the 17th Int.Display Workshops Pages: 2001-2004
• [Journal Article] Photo-assisted Electron Emission from MOS-type Cathode Based on Nanocrystalline Silicon (2010)
  • Author(s): H.Shimawaki
  • Journal Title: Tech.Digest of the 23rd Int.Vacuum Nanoelectronics Conf. Pages: 74-75
  • Peer Reviewed
• [Journal Article] Electron Emission from Planar-type Cathodes based on Oxidized Nanocrystalline Silicon (2010)
  • Author(s): H.Shimawaki
  • Journal Title: Proc.of the 34th Workshop on Compound Semiconductor Devices and Integrated Circuits Pages: 67-68
• [Journal Article] Intensity Distribution of Electron Emission from nc-Si MOS Cathode (2009)
  • Author(s): H. Shimawaki, K. Murakami, Y. Neo, H. Mimura, F. Wakaya, and M. Takai
  • Journal Title: Proc. of the 16th Int. Display Workshops Pages: 2001-2004
• [Journal Article] Emission uniformity of nanocrystalline silicon based metal-oxide-semiconductor cathodes (2009)
  • Author(s): H. Shimawaki, K. Murakami, Y. Kida, Y. Neo, H. Mimura, F. Wakaya, and M. Takai
  • Journal Title: Tech. Digest of the 22nd Int. Vacuum Nanoelectronics Conf. Pages: 309-310
  • Peer Reviewed
• [Journal Article] Emission uniformity of nanocrystalline silicon based metal-oxide-semiconductor cathodes (2009)
  • Author(s): H.Shimawaki
  • Journal Title: Tech.Digest of the 22nd Int.Vacuum Nanoelectronics Conf. Pages: 309-310
  • Peer Reviewed
• [Journal Article] Metal-oxide-semiconductor cathode arrays based on nanocrystalline silicon prepared by pulsed laser ablation (2009)
  • Author(s): H.Shimawaki
  • Journal Title: Tech.Digest of the 10th Int.Conf.on Laser Ablation Pages: 409-409
  • Peer Reviewed
• [Journal Article] nc-SiMOSカソードの電子放射特性 (2009)
  • Author(s): 木田 庸
  • Journal Title: 信学技報 108
• [Journal Article] Electron emission from nanocrystalline silicon based metal-oxide-semiconductor cathode arrays (2008)
  • Author(s): H. Shimawaki, Y. Kida, Y. Neo, H. Mimura, K. Murakami, F. Wakaya, and M. Takai
  • Journal Title: Tech. Digest of the 21st Int. Vacuum Nanoelectronics Conf. Pages: 128-129
  • Peer Reviewed
• [Journal Article] シリコン微結晶面放射型冷陰極の電子放射特性 (2008)
  • Author(s): 嶋脇秀隆, 木田庸, 根尾陽一郎, 三村秀典, 村上勝久, 若家富士夫, 高井幹夫
  • Journal Title: 信学技報 Volume: 108, 177
  • NAID: 110007006037
• [Journal Article] Electron emission from nanocrystalline silicon based metal-oxide-semiconductor cathode arrays (2008)
  • Author(s): H. Shimawaki
  • Journal Title: Tech. Digest of the 21st Int. Vacuum Micro electronics Conf. Pages: 128-129
  • Peer Reviewed
• [Journal Article] シリコン微結晶面放射型冷陰極の電子放射特性 (2008)
  • Author(s): 嶋脇秀隆
  • Journal Title: 信学技報 108
  • NAID: 110007006037
• [Presentation] nc-Si MOS冷陰極の光照射特性 (2010)
  • Author(s): 嶋脇秀隆, 根尾陽一郎, 三村秀典, 若家富士夫, 高井幹夫
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-14
• [Presentation] nc-Si MOS冷陰極の光照射特性 (2010)
  • Author(s): 嶋脇秀隆
  • Organizer: 応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-14
• [Presentation] nc-Si MOSカソードアレイのエミッション均一性の評価 (2010)
  • Author(s): 嶋脇秀隆, 根尾陽一郎, 三村秀典, 村上勝久, 若家冨士男, 高井幹夫
  • Organizer: 第7回真空ナノエレクトロニクスシンポジウム
  • Place of Presentation: 静岡大学浜松キャンパス
  • Year and Date: 2010-03-03
• [Presentation] nc-Si MOSカソードのエミッション均一性の評価 (2009)
  • Author(s): 嶋脇秀隆, 村上勝久, 木田庸, 根尾陽一郎, 三村秀典, 若家富士夫, 高井幹夫
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-10
• [Presentation] nc-Si MOSカソードアレイの諸特性 (2009)
  • Author(s): 嶋脇秀隆, 根尾陽一郎, 三村秀典, 村上勝久, 若家富士夫, 高井幹夫
  • Organizer: 第6回真空ナノエレクトロニクスシンポジウム
  • Place of Presentation: 大阪大学中之島センター
  • Year and Date: 2009-03-04
• [Presentation] nc-Si MOS冷陰極アレイの電子放射特性 (2008)
  • Author(s): 嶋脇秀隆, 木田庸, 根尾陽一郎, 三村秀典, 村上勝久, 若家富士夫, 高井幹夫
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-02
• [Presentation] nc-SiMOS冷陰極アレイの電子放射特性 (2008)
  • Author(s): 嶋脇秀隆
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-02