Study of the interface at MIS/GaN-FET

• Project/Area Number: 20560341
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Ritsumeikan University
• Principal Investigator: KIKAWA Junjiro Ritsumeikan University, 総合理工学研究機構, 教授 (70469196)
• Co-Investigator(Kenkyū-buntansha): KANEKO Masamitsu 立命館大学, 総合理工学研究機構, 研究員 (70374709)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000); Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: GaN / MIS-FET / SiN / interface / trap / inversion layer / KFM / CV / MIS / dipole / in situ SiN / Trap / Interface

Research Abstract

We studied an interface between SiN and GaN. We observed changes of fixed charges at the interface by stoichiometric variation of SiN and anneal treatments. The origin of this phenomenon might be point defects related to a difference of N atom surface density between SiN and GaN. We proposed the dipole model in order to explain it.

Research Products

• [Journal Article] Study of the flatband voltage shift of metal/insulator/n-GaN capacitors by annealing (2010)
  • Author(s): J.Kikawa, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguch, Y.Nanishi
  • Journal Title: Phys.Status Solidi B 246 Pages: 1649-1652
  • Peer Reviewed
• [Journal Article] Study of the flat band voltage shift of metal/insulator/n-GaN capacitors by annealing (2010)
  • Author(s): J.Kikaw, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguch, Y.Nanishi
  • Journal Title: Phys.Status Solidi B Volume: 247 Pages: 1649-1652
  • Peer Reviewed
• [Journal Article] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods (2009)
  • Author(s): J.Kikawa, Y.Horiuchi, E.Shibata, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A. Yamaguchi, Y Nanishi
  • Journal Title: Material researchsociety symposium proceedings 1108 Pages: 157-161
  • Peer Reviewed
• [Journal Article] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods (2009)
  • Author(s): J.Kikawa, Y.Horiuchi, E.Shibata, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguchi, Y Nanishi
  • Journal Title: Material research society symposium proceedings 1108 Pages: 157-161
  • Peer Reviewed
• [Presentation] 電流-電圧特性の温度依存性評価によるp型InNの検証 (2011)
  • Author(s): 櫻井秀昭, 井脇明日香, 岩本亮輔, 山口智広, 城川潤二郎, 荒木努, 名西〓之
  • Organizer: 第58回 応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学(神奈川県)
  • Year and Date: 2011-03-25
• [Presentation] Study of the flat bandvoltage shift in Metal/Insulator/n-GaN capacitors by annealing (2009)
  • Author(s): J.Kikawa, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguchi, Y Nanishi
  • Organizer: 2009 E-MRS Fall meeting
  • Place of Presentation: Warsaw,Poland
  • Year and Date: 2009-09-17
• [Presentation] Study of the flat band voltage shift in Metal/Insulator/n-GaN capacitors by annealing (2009)
  • Author(s): J.Kikawa, M.Kaneko, H.Otake, T.Fujishima, K.Chikamatsu, A.Yamaguchi, Y Nanishi
  • Organizer: 2009 E-MRS Fall meeting
  • Place of Presentation: Warsaw Univ.(Poland)
  • Year and Date: 2009-09-17
• [Presentation] Metal/SiN/GaN構造のアニールによるフラットバンドシフトの検討 (2009)
  • Author(s): 城川潤二郎、堀内佑樹,柴田英次,金子昌充、大嶽浩隆,藤嶌辰也,近松健太郎,山口敦司,名西〓之
  • Organizer: 秋季 第70回 応用物理学会学術講演会
  • Place of Presentation: 富山大学、富山
  • Year and Date: 2009-09-10
• [Presentation] Metal/SiN/GaN構造のアニールによるフラットバンドシフトの検討 (2009)
  • Author(s): 城川潤二郎、堀内佑樹, 柴田英次, 金子昌充、大嶽浩隆, 藤罵辰也, 近松健太郎, 山口敦司, 名西〓之
  • Organizer: 秋季 第70回 応用物理学会 学術講演会
  • Place of Presentation: 富山大学(富山県)
  • Year and Date: 2009-09-10
• [Presentation] CV測定によるGaN-MIS構造に於けるSiN成膜条件の検討 (2009)
  • Author(s): 城川潤二郎、堀内佑樹,柴田英次,金子昌充、大嶽浩隆,藤嶌辰也,近松健太郎,山口敦司,名西〓之
  • Organizer: 春季第56回応用物理学会学術講演会
  • Place of Presentation: つくば大学、茨城
  • Year and Date: 2009-04-01
• [Presentation] CV測定によるGaN-MIS構造に於けるSiN成膜条件の検討 (2009)
  • Author(s): 城川潤二郎、堀内佑樹, 柴田英次, 金子昌充、大嶽浩隆, 藤嶌辰也, 近松健太郎, 山口敦司, 名西〓之
  • Organizer: 春季第56回応用物理学会学術講演会
  • Place of Presentation: つくば大学(茨城県)
  • Year and Date: 2009-04-01
• [Presentation] Detailed investigation of GaN metal-insulator-semiconduct or structures by capacitance-voltage and deep level transient spectroscopy methods (2008)
  • Author(s): 城川潤二郎, 堀内佑樹, 柴田英次, 金子昌充, 大嶽浩隆,藤嶌辰也,近松健太郎, 山口敦司, 名西〓之
  • Organizer: 2008 Materials Research Society Fall meeting
  • Place of Presentation: Boston, USA
  • Year and Date: 2008-12-02
• [Presentation] Detailed investigation of GaN metal-insulator-semiconductor structures by capacitance-voltage and deep level transient spectroscopy methods (2008)
  • Author(s): 城川潤二郎, 堀内佑樹, 柴田英次, 金子昌充, 大嶽浩隆, 藤嶌辰也, 近松健太郎, 山口敦司, 名西?之
  • Organizer: 2008 Materials Research Society Fall meeting
  • Place of Presentation: Boston, MA., U.S.A.
  • Year and Date: 2008-12-02
• [Presentation] GaN MIS構造のCV特性検討2 (2008)
  • Author(s): 城川潤二郎,堀内佑樹,柴田英次,金子昌充,大嶽浩隆,藤嶌辰也,近松健太郎,山口敦司,名西〓之
  • Organizer: 第69回秋季応用物理学会学術講演会
  • Place of Presentation: 愛知県中部大学、春日井市
  • Year and Date: 2008-09-02
• [Presentation] GaN MIS構造のCV特性検討2 (2008)
  • Author(s): 城川潤二郎, 堀内佑樹, 柴田英次, 金子昌充, 大嶽浩隆, 藤蔦辰也, 近松健太郎, 山口敦司, 名西?之
  • Organizer: 第69回秋季応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市中部大学
  • Year and Date: 2008-09-02