| Project/Area Number |
20613015
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Element strategy
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| Research Institution | Kanagawa Industrial Technology Center |
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Principal Investigator |
AKIYAMA Kensuke Kanagawa Industrial Technology Center, 電子技術部, 主任研究員 (70426360)
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| Co-Investigator(Kenkyū-buntansha) |
HIRABAYASHI Yasuo 神奈川県産業技術センター, 電子技術部, 主任研究員 (30426358)
KANEKO Satoru 神奈川県産業技術センター, 電子技術部, 主任研究員 (40426359)
安井 学 神奈川県産業技術センター, 電子技術部, 主任研究員 (80426361)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 鉄シリサイド / 半導体 / エピタキシャル成長 / 薄膜成長 / 電気特性 / シリコンカーバイド / エピタキシャル |
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| Research Abstract |
(100)-oriented ss-FeSi_2 films were expitaxially grown on a SiC (3C-SiC)-buffered Si(100) and (111) substrate by co-sputtering iron and silicon. These epitaxial films had double-domain and triple-domain structure on (100)3C-SiC and (111)3C-SiC layer, respectively. The Hall measurements revealed that the epitaxial ss-FeSi_2 films on semi-insulating 4H-SiC showed p-type conductivity with the hall concentration of 1.5×1018 cm^3 at 295K. The Hall mobility was 12 and 140 cm^2/Vs t at 295K and 30K, respectively, indicating the high crystal quality of the epitaxial ss-FeSi_2 films.
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