| Budget Amount *help |
¥79,950,000 (Direct Cost: ¥61,500,000、Indirect Cost: ¥18,450,000)
Fiscal Year 2012: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2011: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Fiscal Year 2010: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000)
Fiscal Year 2009: ¥48,620,000 (Direct Cost: ¥37,400,000、Indirect Cost: ¥11,220,000)
Fiscal Year 2008: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
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| Research Abstract |
We have developed a parallel-plate-type electrode system that can efficiently supply process gases into the narrow gap spacing between the electrode and a substrate and can avoid the contamination of the substrate surface by dusty particles. As a result, high-rate and low-temperature depositions of amorphous and microcrystalline Si, silicon oxide and silicon nitride films have been demonstrated using atmospheric- pressure very high-frequency plasma. Bottom-gate thin film transistors have successfully been fabricated on polyethylene naphthalate (PEN) sheet substrates of 0.125 mm thickness without causing any thermal damage of the substrate material.
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