| Budget Amount *help |
¥25,480,000 (Direct Cost: ¥19,600,000、Indirect Cost: ¥5,880,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
Fiscal Year 2008: ¥10,270,000 (Direct Cost: ¥7,900,000、Indirect Cost: ¥2,370,000)
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| Research Abstract |
This project has opened up new possibilities for ferromagnetic-semiconductor GaMnAs-based quantum devices, and has clarified the valence-band structure of GaMnAs and its related materials. We have achieved a high tunneling magnetoresistance(TMR) up to 175% at 2. 6K in the GaMnAs/AlMnAs/GaMnAs magnetic tunnel junctions. This value is the highest value ever reported in the same temperature region in the GaMnAs-based magnetic tunnel junctions. We fabricated three-terminal GaMnAs quantum-well(QW) devices, and succeeded in controlling the quantum levels and the magneto current ratio by modulating the voltage of the QW electrode. By using the resonant tunneling spectroscopy, we have systematically clarified the valence band structure of GaMnAs for the first time.
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