Creation of the next-generation semiconductor-based nano-spin electronics devices
| Project/Area Number |
20686002
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
OHYA Shinobu 東京大学, 大学院・工学系研究科, 准教授 (20401143)
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| Project Period (FY) |
2008 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥25,480,000 (Direct Cost: ¥19,600,000、Indirect Cost: ¥5,880,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
Fiscal Year 2008: ¥10,270,000 (Direct Cost: ¥7,900,000、Indirect Cost: ¥2,370,000)
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| Keywords | スピントロニクス / 量子ヘテロ構造 / 半導体 / トンネル磁気抵抗効果 / スピントランジスタ / 量子井戸 / 共鳴トンネル効果 |
|---|
| Research Abstract |
This project has opened up new possibilities for ferromagnetic-semiconductor GaMnAs-based quantum devices, and has clarified the valence-band structure of GaMnAs and its related materials. We have achieved a high tunneling magnetoresistance(TMR) up to 175% at 2. 6K in the GaMnAs/AlMnAs/GaMnAs magnetic tunnel junctions. This value is the highest value ever reported in the same temperature region in the GaMnAs-based magnetic tunnel junctions. We fabricated three-terminal GaMnAs quantum-well(QW) devices, and succeeded in controlling the quantum levels and the magneto current ratio by modulating the voltage of the QW electrode. By using the resonant tunneling spectroscopy, we have systematically clarified the valence band structure of GaMnAs for the first time.
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Report
(6 results)
Research Products
(88 results)
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[Journal Article] Nature of Magnetic Coupling between Mn Ions in As-Grown GalxMnxAs Studied by X-ray Magnetic Circular Dichroism2008
Author(s)
Y. Takeda, M. Kobayashi, T. Okane, T. Ohkochi, J. Okamoto, Y. Saito, K. Kobayashi, H. Yamagami, A. Fujimori, A. Tanaka, J. Okabayashi, M. Oshima, S. Ohya, P. N. Hai, and M. Tanaka
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Journal Title
Phys.Rev.Lett. 100
Pages: 247-202
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Peer Reviewed
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[Presentation] Ga1-xMnxAsの内殻吸収磁気円二色性による磁気的相互作用の研究2008
Author(s)
竹田幸治, 小林正起, 岡根哲夫, 大河内拓雄, 岡本淳, 斎藤祐児, 小林啓介, 山上浩志, 藤森涼, 田中新, 岡林澗, 尾嶋 正治,大矢忍, ファムナムハイ, 田中雅明
Organizer
日本物理学会2008年秋季大会
Place of Presentation
岩手大学
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[Book] "IIIV and Group-IV-Based Ferromagnetic Semiconductors for Spintronics", In : Andrews DL, Scholes, GD and Wiederrecht GP (eds.), Comprehensive Nanoscience and Technology, volume 4, pp.447-4622010
Author(s)
M.Tanaka, S.Ohya, Y.Shuto, S.Yada, S.Sugahara
Total Pages
2710
Publisher
Amsterdam : Elsevier
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