High-speed solution growth based on plasma-VLS method
| Project/Area Number |
20686003
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Nagoya University |
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Principal Investigator |
UJIHARA Toru Nagoya University, 大学院・工学研究科, 准教授 (60312641)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥26,260,000 (Direct Cost: ¥20,200,000、Indirect Cost: ¥6,060,000)
Fiscal Year 2009: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2008: ¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000)
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| Keywords | 半導体 / 結晶成長 / プラズマ |
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| Research Abstract |
The purpose of this study is to propose a novel "plasma enhanced VLS growth method" for high-speed SiC bulk crystal growth. Firstly, for this method, we newly designed an atmospheric-pressure plasma generator for high temperature growth. Secondly, carbon supply to solvent was highly improved by optimization of propane gas blow method. Thirdly, the quality of crystal grown by solution method was confirmed to be higher by etching and X-ray topography technique. However, we could not realize plasma-enhanced propane gas supply due to a technical problem.
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Report
(3 results)
Research Products
(29 results)
