| Budget Amount *help |
¥20,280,000 (Direct Cost: ¥15,600,000、Indirect Cost: ¥4,680,000)
Fiscal Year 2009: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2008: ¥15,990,000 (Direct Cost: ¥12,300,000、Indirect Cost: ¥3,690,000)
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| Research Abstract |
To realize high performance thin film transistor of germanium silicon system, those thin films were deposited by magnetron sputtering and evaluated. It is found that crystallization of those films is observed for the substrate temperature larger than 250℃ by Ar plasma sputtering, while that is prevented and amorphous film is obtained by Ar/H_2 plasma reactive sputtering. The transistor operation can be obtained for the Ar/H2 reactive sputtering deposited germanium thin film, while that cannot be obtained for crystallized films.
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