Monolithic integration of multi-wavelength light emitter By vapor-diffusion-dominated selective-area growth
| Project/Area Number |
20686022
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
SUGIYAMA Masakazu The University of Tokyo, 大学院・工学系研究科, 准教授 (90323534)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥25,480,000 (Direct Cost: ¥19,600,000、Indirect Cost: ¥5,880,000)
Fiscal Year 2010: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2009: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
Fiscal Year 2008: ¥9,880,000 (Direct Cost: ¥7,600,000、Indirect Cost: ¥2,280,000)
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| Keywords | InGaN / MOVPE / 選択成長 / 多重量子井戸 / 発光ダイオード / 波長シフト / 有機金属気相成長 / GaN / 発光波長制御 / 多色集積 |
|---|
| Research Abstract |
Selective-area growth (SAG) of InGaN/GaN multiple quantum wells (MQWs), taking advantage of the vapor-phase diffusion of layer precursors with the use of wide (more than 100μm in width) masks, has been investigated in order to achieve in-plane modulation of light-emission wavelength. The mechanism behind such wavelength modulation has been explored through the analysis of the SAG of GaN, InN and InGaN bulk layers. Aiming at a wider range of wavelength modulation, a GaN hexagonal pyramid, with tailored mask width surrounding it, has been adopted and InGaN/GaN MQWs have been grown on the semi-polar surfaces on the pyramids. A multi-wavelength light emitter has been fabricated on the basis of this approach.
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Report
(4 results)
Research Products
(37 results)
