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Investigation of carrier spin related phenomena in Si and its application to spin-functional devices

Research Project

Project/Area Number 20686023
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypeSingle-year Grants
Research Field Electron device/Electronic equipment
Research InstitutionThe University of Tokyo

Principal Investigator

NAKANE Ryosho  The University of Tokyo, 大学院・工学系研究科, 講師 (50422332)

Project Period (FY) 2008 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥26,130,000 (Direct Cost: ¥20,100,000、Indirect Cost: ¥6,030,000)
Fiscal Year 2010: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2009: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2008: ¥20,670,000 (Direct Cost: ¥15,900,000、Indirect Cost: ¥4,770,000)
Keywords量子デバイス / スピンデバイス / スピンエレクトロニクス / 先端機能デバイス / 電気・電子材料 / 電子デバイス・機器 / 磁性 / 電子デバイス・電子機器 / 電子・電気材料 / 複合材料・物性 / 集積回路デバイス
Research Abstract

The final goal of this study is to realize spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs), which utilize carrier charge as well as carrier spin degrees of freedom. Since the operation principal of a spin MOSFET is spin dependent transport in a MOS inversion Si channel, ferromagnetic materials with a low Schottky barrier height are strongly needed. In this study, two different methods were used : (method 1) ion implantation, (method 2) auto-doping effect during the crystal growth of a ferromagnetic material. In method 1, ferromagnetic FeSi was fabricated through silicidation on a Si(001) substrate. To reduce the silicidation temperature, ion implantation of As atoms with a energy of 15eV were performed. As a result, we demonstrated that FeSi/Si junctions formed with a low temperature have a low Shottky barrier height for electrons. In method 2, MnAs grown on Si(001) was found to have a low Schottky barrier height for electrons, which is due to the auto-doping of As during the initial stage of molecular beam epitaxy. We fabricated spin MOSFETs with MnAs, and found that the spin MOSFETs exhibit hysteretic behavior below 50K, which probably originates from spin-dependent transport.

Report

(4 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (10 results)

All 2011 2010 2009 2008

All Journal Article (4 results) (of which Peer Reviewed: 3 results) Presentation (6 results)

  • [Journal Article] Magnetoresistance of a Spin Meta 1-Oxide-Semiconductor Field-Effect Transistor (spin MOSFET) with Ferromagnetic MnAs Source and Drain Contacts2010

    • Author(s)
      R.Nakane, T.Harada, K.Suigura, M.Tanaka
    • Journal Title

      Jpn.J.Appl.Phys. 49

      Pages: 1130001-1130004

    • Related Report
      2010 Final Research Report
  • [Journal Article] Magnetoresistance of a Spin Metal-Oxide-Semiconductor Field-Effect Transistor (spin MOSFET) with Ferromagnetic MnAs Source and Drain Contacts2010

    • Author(s)
      R.Nakane, T.Harada, K.Suigura, M.Tanaka
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: Vol.49 Pages: 1130001-1130004

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Characterization of halfmetallic L21-phase Co2FeSi full-Heusler alloy thin films formed by rapid thermal annealing2008

    • Author(s)
      Y. Takamura, R. Nakane, H. Munekata, and. S. Sugahara
    • Journal Title

      Journal of Applied Physics 103

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Formation of Si and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors2008

    • Author(s)
      Y.Taakamura, A. Nisnijima, Y . Nagahama, R. Nakane, and S. C.sugahara
    • Journal Title

      ECS Transactions 16

      Pages: 945-952

    • NAID

      120006581933

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Presentation] Siチャネル及びFe電極を有する多端子横型デバイスにおける非局所信号への異方性磁気抵抗効果の影響2011

    • Author(s)
      佐藤彰一、中根了昌、國谷瞬、田中雅明
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Year and Date
      2011-03-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] Fe電極を用いたスピンMOSFETにおけるスピン依存伝導特性2009

    • Author(s)
      國谷瞬、中根了昌、佐藤彰一、菅原聡、田中雅明
    • Organizer
      日本応用物理学会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] シリコンMOS反転層へのスピン注入とスピンMOSFETへの応用2008

    • Author(s)
      中根了昌, 原田智之, 杉浦邦晃, 菅原聡, 田中雅明
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学, 春日井
    • Year and Date
      2008-09-03
    • Related Report
      2008 Annual Research Report
  • [Presentation] シリコンMOS反転層へのスピン注入とスピンMOSFETへの応用2008

    • Author(s)
      中根了昌, 原田智之, 杉浦邦晃, 菅原聡, 田中雅明
    • Organizer
      第69回応用物理学会学術講演会3p-CA-3,予稿集p52
    • Place of Presentation
      中部大学,春日井
    • Related Report
      2010 Final Research Report
  • [Presentation] Magnetoresistance in MOSFETs with ferromagnetic MnAs source and drain contacts : Spin injection and transport in Si MOS channels2008

    • Author(s)
      R.Nakane, T.Harada, K.Sugiura, S.Sugahara, M.Tanaka
    • Organizer
      The 66^<th> Device Research Conference (66^<th> DRC)V.A-7, Conference Digest p227.
    • Place of Presentation
      Santa Barbara, CA,USA
    • Related Report
      2010 Final Research Report
  • [Presentation] Magnetoresistance in MOSFETs with ferromagnetic MnAs source and drain contacts : Spin injection and transport in Si MOS channels2008

    • Author(s)
      R. Nakane, T. Harada, K. Sugiura, S. Susahara and M. Tanaka
    • Organizer
      The 66th Device Research Conference (66th DRC)
    • Place of Presentation
      Santa Barbara, CA, USA
    • Related Report
      2008 Annual Research Report

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Published: 2008-04-01   Modified: 2016-04-21  

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