Research Project
Grant-in-Aid for Young Scientists (B)
The reversible control of metal insulator transition(MIT) in In/Si(111) nanowires is demonstrated by tuning the band filling of the one-dimensional surface state by optical doping. The control of MIT is carried out by regulating the Fermi level in the surface state around the half-filled position, depending on the carrier density introduced at the interface. We successfully achieved the reversible and active control of MIT via the charge doping by regulating the intensity of photoexcitation and electrical field. The dynamical behavior is investigated by femtosecond time-resolved STM. This method is widely applicable to other low-dimensional systems and makes MIT more controllable and suitable for use in nanowires as anactive element in future architectures of nanosized functional devices as well as nanoscale interdevice wiring.
All 2010 2009 2008 Other
All Journal Article (6 results) (of which Peer Reviewed: 6 results) Presentation (17 results) Remarks (1 results)
Journal of Physics: Condensed Matter (印刷中)
Jpn. J. Appl. Phys. (印刷中)
210000069131
Japanese Journal of Applied Physics (掲載確定)
Journal of Physics : Condensed Matter 22(印刷中)
Nano Lett. 8(11)
Pages: 3577-3581
Nano letters 8
http://dora.bk.tsukuba.ac.jp/