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Study on single-photon emission in carbon nanotubes

Research Project

Project/Area Number 20710107
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Microdevices/Nanodevices
Research InstitutionNagoya University

Principal Investigator

OHNO Yutaka  Nagoya University, 大学院・工学研究科, 准教授 (10324451)

Project Period (FY) 2008 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2008: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Keywordsカーボンナノチューブ / 発光 / 励起子 / 光電子デバイス / 光物性 / デバイス / 電界効果トランジスタ / pn制御 / 単一光子源
Research Abstract

In this study, I studied optical properties of carbon nanotubes and carrier injection phenomena to carbon nanotubes, aiming to develop their potential as future optoelectronic devices. First, I analyzed the dependence of photoluminescence intensity on chirality of carbon nanotubes, and fount that dominant exciton relaxation process is non-radiative relaxation via multiple LO phonons. For light emitting devices, a technology to control the polarity of carriers injected into carbon nanotubes was developed, utilizing interface fixed charges introduced by a deposition of an insulator. I also realized simultaneous injection of electrons and holes into a carbon nanotube in p/n diode structure.

Report

(3 results)
  • 2009 Annual Research Report   Final Research Report ( PDF )
  • 2008 Annual Research Report
  • Research Products

    (60 results)

All 2010 2009 2008 Other

All Journal Article (12 results) (of which Peer Reviewed: 12 results) Presentation (37 results) Book (4 results) Remarks (3 results) Patent(Industrial Property Rights) (4 results)

  • [Journal Article] Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges2010

    • Author(s)
      N. Moriyama, Y. Ohno, T. Kitamura, S. Kishimoto, T. Mizutani
    • Journal Title

      Nanotechnol. vol.21,no.16

      Pages: 165201-165201

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges2010

    • Author(s)
      N.Moriyama
    • Journal Title

      Nanotechnology 21

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy2010

    • Author(s)
      Y.Okigawa
    • Journal Title

      Jpn.J.Appl.Phys 49

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors2010

    • Author(s)
      Y.Nakashima
    • Journal Title

      Journal of Nanoscience and Nanotechnology 10

      Pages: 3805-3809

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Thin film transistors using PECVD-grown carbon nanotubes2010

    • Author(s)
      Y.Ono
    • Journal Title

      Nanotechnology 21(印刷中)

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] A study of preferential growth of carbon nanotube with semiconducting behavior grown by plasma-enhanced chemical vapor deposition2009

    • Author(s)
      T.Mizutani
    • Journal Title

      Journal of Applied Physics 106

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrical properties of carbon nanotube FETs2008

    • Author(s)
      T. Mizutani, Y. Ohno, S. Kishimoto
    • Journal Title

      Proceedings of SPIE vol.7037

      Pages: 703703-703703

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electrical properties of carbon nanotube FETs2008

    • Author(s)
      T. Mizutani, Y. Nosho, Y. Ohno
    • Journal Title

      Journal of Physics: Conference Series vol.109

      Pages: 12002-12002

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] カーボンナノチューブのフォトルミネッセンスにおける励起子遷移と周辺環境効果2008

    • Author(s)
      大野雄高
    • Journal Title

      応用物理 vol.77

      Pages: 656-661

    • NAID

      10021109255

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electrical properties of carbon nanotube FETs2008

    • Author(s)
      T. Mizutani, Y. Ohno
    • Journal Title

      Journal of Physics : Conference Series 109

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrical properties of carbon nanotube FETs2008

    • Author(s)
      T. Mizutani, Y. Ohno
    • Journal Title

      Proc. SPIE 7037

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] カーボンナノチューブのフォトルミネッセンスにおける励起子遷移と周辺環境効果2008

    • Author(s)
      大野雄高
    • Journal Title

      応用物理 77

      Pages: 656-661

    • NAID

      10021109255

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Presentation] カーボンナノチューブFETの動作に及ぼすゲート絶縁膜界面電荷の影響2010

    • Author(s)
      大野雄高, 岸本茂, 水谷孝
    • Organizer
      春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-17
    • Related Report
      2009 Final Research Report
  • [Presentation] カーボンナノチューブ電界効果型トランジスタの電気的特性に及ぼす界面特性の影響とその制御2010

    • Author(s)
      大野雄高, 森山直希, 北村隆光, 鈴木耕介, 岸本茂, 水谷孝
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      沖縄県青年会館
    • Year and Date
      2010-02-23
    • Related Report
      2009 Final Research Report
  • [Presentation] (招待講演)カーボンナノチューブ電界効果型トランジスタの電気的特性に及ぼす界面特性の影響とその制御2010

    • Author(s)
      大野雄高
    • Organizer
      電子情報通信学会,電子デバイス研究会
    • Place of Presentation
      那覇青年会館
    • Year and Date
      2010-02-23
    • Related Report
      2009 Annual Research Report
  • [Presentation] Carrier Type Conversion in Carbon Nanotube Field-Effect Transistors Caused by Interface Fixed Charges2009

    • Author(s)
      Y. Ohno, N. Moriyama, T. Kitamura, K. Suzuki, S. Kishimoto, T. Mizutani
    • Organizer
      International Semiconductor Device Research Symposium
    • Place of Presentation
      Maryland, USA
    • Year and Date
      2009-12-10
    • Related Report
      2009 Final Research Report
  • [Presentation] Carrier Type Conversion in Carbon Nanotube Field-Effect Transistors Caused by Interface Fixed Charges2009

    • Author(s)
      Y.Ohno
    • Organizer
      International Semiconductor Device Research Sym posium
    • Place of Presentation
      Maryland, USA
    • Year and Date
      2009-12-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Control of carrier type for high-performance carbon nanotube FETs by fixed charges incorporated in gate insulator2009

    • Author(s)
      Y. Ohno, N. Moriyama, T. Kitamura, S. Kishimoto, T. Mizutani
    • Organizer
      International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      2009-11-19
    • Related Report
      2009 Final Research Report
  • [Presentation] Control of carrier type for high-performance carbon nanotube FETs by fixed charges incorporated in gate insulator2009

    • Author(s)
      Y.Ohno
    • Organizer
      International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Sapporoシュラトソホテル札幌
    • Year and Date
      2009-11-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] Control of carrier type in carbon nanotube FETs by high-k gate insulator2009

    • Author(s)
      N. Moriyama, Y. Ohno, S. Kishimoto, T. Mizutani
    • Organizer
      The 6th Korea-Japan Symposium on Carbon Nanotube
    • Place of Presentation
      Okinawa, JAPAN
    • Year and Date
      2009-10-25
    • Related Report
      2009 Final Research Report
  • [Presentation] Electrical characteristics of high-k gate insulator for carbon nanotube FETs2009

    • Author(s)
      T. Kitamura, Y. Ohno, S. Kishimoto, T. Mizutani
    • Organizer
      The 6th Korea-Japan Symposium on Carbon
    • Place of Presentation
      Okinawa, JAPAN
    • Year and Date
      2009-10-25
    • Related Report
      2009 Final Research Report
  • [Presentation] Control of carrier type in carbon nanotube FETs by high-k gate insulator2009

    • Author(s)
      N.Moriyama
    • Organizer
      The 6th Korea-Japan Symposium on Carbon Nanotube
    • Place of Presentation
      Okinawaカルチャーリゾートフロンデ
    • Year and Date
      2009-10-25
    • Related Report
      2009 Annual Research Report
  • [Presentation] Electrical characteristics of high-k gate insulator for carbon nanotube FETs2009

    • Author(s)
      T.Kitamura
    • Organizer
      The 6th Korea-Japan Symposium on Carbon Nanotube
    • Place of Presentation
      Okinawaカルチャーリゾートフロンデ
    • Year and Date
      2009-10-25
    • Related Report
      2009 Annual Research Report
  • [Presentation] (招待講演) Fabrication and characterization of carbon nanotube transisinra2009

    • Author(s)
      Y.Ohno
    • Organizer
      The Second Nanotechnology International Forum
    • Place of Presentation
      Moscow, Russia
    • Year and Date
      2009-10-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] ゲート絶縁膜の堆積によるカーボンナノチューブFETの伝導型制御2009

    • Author(s)
      森山直希, 大野雄高, 岸本茂, 水谷孝
    • Organizer
      秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-07
    • Related Report
      2009 Final Research Report
  • [Presentation] ゲート絶縁膜の堆積によるカーボンナノチューブFETの伝導型制御2009

    • Author(s)
      森山直希
    • Organizer
      第70回応用物理学会講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-07
    • Related Report
      2009 Annual Research Report
  • [Presentation] Preparation of catalyst nanoparticles for growth of high-density horizont ally aligned carbon nanotubes2009

    • Author(s)
      K.Hata
    • Organizer
      International Conference on the Science and Applications of Nanotubes
    • Place of Presentation
      Beijing, China
    • Year and Date
      2009-06-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] Carrier-type conversion in carbon nanotube FETs by deposition of Hf022009

    • Author(s)
      N.Moriyama
    • Organizer
      International Symposium on Carbon Nanotube Nanoelectronics
    • Place of Presentation
      Matsushimaホテル大観荘
    • Year and Date
      2009-06-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] Formation of catalyst nano-particles for growth of high-density horizont ally aligned carbon nanotubes2009

    • Author(s)
      K.Hata
    • Organizer
      International Symposium on Carbon Nanotube Nanoelectronics
    • Place of Presentation
      Matsushimaホテル大観荘
    • Year and Date
      2009-06-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] (招待講演) Direct comparison of photoluminescence intensity with (n, m) abundance of single-walled carbon nanotubes2009

    • Author(s)
      Y.Ohno
    • Organizer
      Workshop on Nanotube Optics & Nanospectroscopy
    • Place of Presentation
      Matsushimaホテル大観荘
    • Year and Date
      2009-06-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] Direct comparison of photoluminescence intensity with (n, m) abundance of single-walled carbon nanotubes2009

    • Author(s)
      Y. Ohno, A. Kobayashi, T. Mizutani
    • Organizer
      3rd Workshop on Nanotube Optics & Nanospectroscopy
    • Place of Presentation
      Matsushima, Japan(invited)
    • Year and Date
      2009-06-07
    • Related Report
      2009 Final Research Report
  • [Presentation] (招待講演) Plasma-enhanced CVD of semiconducting SWNTs for transis for application2009

    • Author(s)
      Y.Ohno
    • Organizer
      The 4th Guadalupe Workshop
    • Place of Presentation
      Texas, USA
    • Year and Date
      2009-04-21
    • Related Report
      2009 Annual Research Report
  • [Presentation] Plasma-enhanced CVD of semiconducting SWNTs for transistor application2009

    • Author(s)
      Y. Ohno, T. Mizutani
    • Organizer
      The 4th Guadalupe Workshop
    • Place of Presentation
      Texas, USA
    • Year and Date
      2009-04-17
    • Related Report
      2009 Final Research Report
  • [Presentation] (招待講演) Fabrication and characterization of high-performance carbon nanotube field-effect transistors2009

    • Author(s)
      Y.Ohno
    • Organizer
      First International Conference on Nanostructured Materials and Nanocomposites
    • Place of Presentation
      Kerala, India
    • Year and Date
      2009-04-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fabrication and characterization of high-performance carbon nanotube field-effect transistors2009

    • Author(s)
      Y. Ohno, T. Mizutani
    • Organizer
      First International Conference on Nanostructured Materials and Nanocomposites
    • Place of Presentation
      Kottayam, Kerala, India(invited)
    • Year and Date
      2009-04-06
    • Related Report
      2009 Final Research Report
  • [Presentation] High-kゲート絶縁膜を有するn型トップゲートカーボンナノチューブFETの作製と評価2009

    • Author(s)
      森山直希, 大野雄高, 岸本茂, 水谷孝
    • Organizer
      春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Related Report
      2009 Final Research Report
  • [Presentation] Control of conduction property of carbon nanotube transistors (Invited)2008

    • Author(s)
      Y. Ohno
    • Organizer
      The 5 th Japan-Korea Symposium on Carbon Nan otube
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2008-11-12
    • Related Report
      2008 Annual Research Report
  • [Presentation] High-performance n-type Carbon Nanotube FETs with Stability2008

    • Author(s)
      N. Moriyama, Y. Ohno, S. Kishimoto, T. Mizutani
    • Organizer
      The 5th Japan-Korea Symposium on Carbon Nanotube
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2008-11-09
    • Related Report
      2009 Final Research Report
  • [Presentation] Control of conduction property of carbon nanotube transistors2008

    • Author(s)
      Y. Ohno, T. Mizutani
    • Organizer
      The 5th Japan-Korea Symposium on Carbon Nanotube
    • Place of Presentation
      Busan, Korea(invited)
    • Year and Date
      2008-11-09
    • Related Report
      2009 Final Research Report
  • [Presentation] Influence of insulator deposition in carbon nanotube FETs2008

    • Author(s)
      N. Moriyama, Y. Ohno, Y. Nakashima, H. Soma, S. Kishimoto, T. Mizutani
    • Organizer
      21st International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Fukuoka, Japan
    • Year and Date
      2008-10-28
    • Related Report
      2009 Final Research Report
  • [Presentation] Influence of insulator deposition in carbon nanotube FETs2008

    • Author(s)
      N. Morivama, Y. Ohno
    • Organizer
      International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Fukuoka
    • Year and Date
      2008-10-28
    • Related Report
      2008 Annual Research Report
  • [Presentation] Electrical properties of carbon nanotube FETs (Invited)2008

    • Author(s)
      T. Mizutani, Y. Ohno
    • Organizer
      The Seventh International Conference on Advanced Semiconductor Devices and Microsystems
    • Place of Presentation
      Smolenice, Slovakia
    • Year and Date
      2008-10-12
    • Related Report
      2008 Annual Research Report
  • [Presentation] Fabrication and Characterization of Carbon Nanotube Filed-Effect Transistors2008

    • Author(s)
      Y. Ohno, T. Mizutani
    • Organizer
      1 st Russian-Japanese Young Scientist Conference on Nanomaterials and Nanotechnology
    • Place of Presentation
      Moscow, Russia
    • Year and Date
      2008-10-07
    • Related Report
      2008 Annual Research Report
  • [Presentation] Fabrication and Characterization of Carbon Nanotube Filed-Effect Transistors2008

    • Author(s)
      Y. Ohno, T. Mizutani
    • Organizer
      1st Russian-Japanese Young Scientist Conference on Nanomaterials and Nanotechnology
    • Place of Presentation
      Moscow, Russia
    • Year and Date
      2008-10-06
    • Related Report
      2009 Final Research Report
  • [Presentation] カーボンナノチューブトランジスタの作製と評価2008

    • Author(s)
      大野雄高, 水谷孝
    • Organizer
      秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-02
    • Related Report
      2009 Final Research Report
  • [Presentation] カーボンナノチューブFETにおける絶縁膜堆積の影響2008

    • Author(s)
      森山直希, 大野雄高, 岸本茂, 水谷孝
    • Organizer
      秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-02
    • Related Report
      2009 Final Research Report
  • [Presentation] n-type single-walled carbon nanotube FETs with Sm as contact electrodes2008

    • Author(s)
      P.R. Somani, A. Kobayashi, Y. Ohno, S. Kishimoto, T. Mizutani
    • Organizer
      秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-02
    • Related Report
      2009 Final Research Report
  • [Presentation] カーボンナノチューブトランジスタの作製と評価(招待講演)2008

    • Author(s)
      大野雄高
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] Carrier-type conversion in carbon nanotube FETs by deposition of HfO22008

    • Author(s)
      N. Moriyama, Y. Ohno, S. Kishimoto, T. Mizutani
    • Organizer
      International Symposium on Carbon Nanotube Nanoelectronics
    • Place of Presentation
      Matsushima, Japan
    • Year and Date
      2008-06-09
    • Related Report
      2009 Final Research Report
  • [Book] Environmental effects on photoluminescence of single-walled carbon nanotubes(ed. J.M. Marulanda, Carbon nanotube)2010

    • Author(s)
      Y. Ohno, S. Maruyama, T. Mizutani
    • Publisher
      In-Tech
    • Related Report
      2009 Final Research Report
  • [Book] Environmental effects on photoluminescence of single-walled carbon nanotub es(Carbon Nanotube ed. by Mauricio Marulanda)2010

    • Author(s)
      Y.Ohno
    • Total Pages
      13
    • Publisher
      IN-TECH
    • Related Report
      2009 Annual Research Report
  • [Book] Carbon nonatube field effect transistors(eds. P.R. Somani and M. Umeno, Carbon nanotubes: Multifunctional materials)2009

    • Author(s)
      T. Mizutani, Y. Ohno, P.R. Somani
    • Publisher
      Applied Science Innovations Private Limited
    • Related Report
      2009 Final Research Report
  • [Book] Carbon nanotubes, Multifunctional Materials,"Carbon Nanotube Field Effect Transistors"2008

    • Author(s)
      T. Mizutani, Y. Ohno, P. R. Somni
    • Total Pages
      23
    • Publisher
      Applied Science Innovations
    • Related Report
      2008 Annual Research Report
  • [Remarks]

    • URL

      http://qed63.qd.nuqe.nagoya-u.ac.jp/mizutanilab/

    • Related Report
      2009 Final Research Report
  • [Remarks]

    • URL

      http://qed63.qd.nuqe.nagoya-u.ac.jp/mizutanilab-j/

    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://133.6.66.95/mizutanilab/

    • Related Report
      2008 Annual Research Report
  • [Patent(Industrial Property Rights)] カーボンナノチューブの製造方法, カーボンナノチューブ製造用の単結晶基板, およびカーボンナノチューブ2010

    • Inventor(s)
      大野雄高, 畑謙佑, 佐藤忠, 河野修一
    • Industrial Property Rights Holder
      名古屋大学, 京セラ, 京セラキンセキ
    • Industrial Property Number
      2010-045945
    • Filing Date
      2010-03-02
    • Related Report
      2009 Final Research Report
  • [Patent(Industrial Property Rights)] カーボンナノチューブの製造方法,カーボンナノチューブ製造用の単結晶基板,およびカーボンナノチューブ2010

    • Inventor(s)
      大野雄高, 畑謙佑, 佐藤忠, 河野修一
    • Industrial Property Rights Holder
      名古屋大学,京セラ,京セラキンセキ
    • Industrial Property Number
      2010-045945
    • Filing Date
      2010-03-02
    • Related Report
      2009 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体デバイスおよび製造方法2009

    • Inventor(s)
      大野雄高, 水谷孝, 森山直希, 北村隆光
    • Industrial Property Rights Holder
      名古屋大学
    • Industrial Property Number
      2009-249307
    • Filing Date
      2009-10-29
    • Related Report
      2009 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体デバイスおよび製造方法2008

    • Inventor(s)
      大野雄高, 水谷孝, 森山直希, 北村隆光
    • Industrial Property Rights Holder
      名古屋大学
    • Industrial Property Number
      2009-249307
    • Filing Date
      2008-10-29
    • Related Report
      2009 Final Research Report

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Published: 2008-04-01   Modified: 2016-04-21  

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