Development of carbon nanotube single electron transistors toward single electron circuits

• Project/Area Number: 20710110
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Microdevices/Nanodevices
• Research Institution: The Institute of Physical and Chemical Research
• Principal Investigator: MORI Takahiro The Institute of Physical and Chemical Research, ナノ電子デバイス研究センター, 産総研特別研究員 (70443041)
• Project Period (FY): 2008 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2008: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
• Keywords: カーボンナノチューブ / 単電子トランジスタ / 電子デバイス / イオンビーム / クーロンブロッケイド / 電子線リソグラフィ

Research Abstract

単電子回路網は、理論的には究極の省エネルギー電子回路となるものである。その問題は基本素子となる単電子トランジスタを室温で動作させることにある。本研究課題ではカーボンナノチューブを用いた単電子トランジスタ(CNT-SET)の動作温度向上を目的とした。本研究では高温動作可能なCNT-SETの作製手法として、イオンビームによるカーボンナノチューブの部分変質法を開発した。これを用いて作製したCNT-SETによって160K程度での動作が実現された。

Research Products

• [Journal Article] Higher temperature operation of the single electron transistors based on single-wall carbon nanotubes (2009)
  • Author(s): T. Mori, S. Sato, K. Omura, S. Yajima, Y. Tsuruoka, K. Uchida, Y. Achiba, H. Yajima, K. Ishibashi
  • Journal Title: Sensors and Materials 21 Pages: 385-391
  • Peer Reviewed
• [Journal Article] Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique (2009)
  • Author(s): T. Mori, S. Sato, K. Omura, S. Yajima, Y. Tsuruoka, Y. Achiba, K. Ishibashi
  • Journal Title: Journal of Vacuum Science and Technology B 27 Pages: 795-798
  • Peer Reviewed
• [Journal Article] Higher temperature operation of the single electron transistors based on single-wall carbon nanotubes (2009)
  • Author(s): Takahiro Mori
  • Journal Title: Sensors and Materials 21 Pages: 385-391
  • Peer Reviewed
• [Journal Article] Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique (2009)
  • Author(s): Takahiro Mori
  • Journal Title: Journal of Vacuum Science and Technology B 27(in press)
  • Peer Reviewed
• [Presentation] Barrier formation technique using low energy Ar ion irradiation to form wide temperature range operable SWCNT-SET (2009)
  • Author(s): Takahiro Mori
  • Organizer: 9^<th> IEEE Conference on Nanotechnology
  • Place of Presentation: Genoa, Italy
  • Year and Date: 2009-07-26
• [Presentation] Barrier formation technique using low energy Ar ion irradiation to form wide temperature range operable SWCNT-SET (2009)
  • Author(s): T. Mori, Y. Tsuruoka, Y. Achiba, K. Ishibashi
  • Organizer: 9th IEEE Conference on Nanotechnology
  • Place of Presentation: Genoa, Italy
• [Presentation] Arイオンビーム部分照射によるhigh-EC SWCNT-SETの形成 (2009)
  • Author(s): 森貴洋、鶴岡泰広、阿知波洋次、石橋幸治
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
• [Presentation] Formation of Single Electron Transistors in Single-Walled Carbon Nanotubes with Low Energy Ar Ion Irradiation Technique (2008)
  • Author(s): T. Mori, S. Sato, K. Omura, S. Yajima, Y. Tsuruoka, Y. Achiba, K. Ishibashi
  • Organizer: International Conference on Nanoscience and Technology 2008
  • Place of Presentation: Keystone, USA
• [Presentation] Arイオンビーム部分照射によるhigh-EC SWCNT-SETの形成 (2008)
  • Author(s): 森貴洋
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学