| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Research Abstract |
Using an electronic device to control phase transitions is not only exciting from fundamental view points, but also offers potential applications for sensors, signal converters and memories. We have performed high-density carrier doping by ionic liquid electrolytes used for gate dielectric layers and succeed to make not only high performance organic field-effect transistors but also demonstrate electric-field control of metal-insulator transition in transition metal oxide thin films.
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