| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥130,000 (Direct Cost: ¥100,000、Indirect Cost: ¥30,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2008: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Research Abstract |
The purpose of this work is(1) to develop the fabrication process of the nanogap electrodes composed of a superconductor and ferromagnetic substance by an improvement of a combination of self-assembled molecular and electron beam lithographic techniques,(2) to fabricate the nanogap electrodes bridged byπ-electron molecules including graphene and observe the carrier transport properties of the nano-junction, and(3) to explore the synthesis of graphene as a channel materials. The achievements are as follows
(1) The fabrication process for the nanogap electrodes composed of Al, Nb, Ni and Co has been developed by applying wet etching process.
(2) Consistence system under high vacuum condition for making molecular devices has been developed.
(3) Consistence system has revealed that the anchor structure between the electrode and molecule is one of most important factor in the device parameters.
(4) Thickness control of graphene overlayers has been achieved by a newly developed chemical vapor deposition(CVD) apparatus.
(5) Evaluation of electrical transport properties of field effect transistor using grown multilayer graphene as a channel have been revealed that electrical band of multilayer graphene grown by CVD is virtually identical to that of monolayer graphene.
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