Development of intense pulsed heavy ion beam and its application to ion implantation technology for next generation semiconductor
| Project/Area Number |
20740319
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Plasma science
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| Research Institution | University of Toyama |
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Principal Investigator |
ITO Hiroaki University of Toyama, 理工学研究部, 助教 (70302445)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2008: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | パルス重イオンビーム / 両極性パルス加速器 / パルスパワー技術 / パルスイオン注入 |
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| Research Abstract |
In order to improve the purity of the intense pulsed ion beam a new type of a pulsed ion beam accelerator named "bipolar pulse accelerator (BPA)" has been proposed and developed. The BPA system utilizes a magnetically insulated acceleration gap and is operated with the bipolar pulse. When the bipolar pulse with voltage of about ±100 kV and pulse duration of about 70 ns was applied to the drift tube, the ions were successfully accelerated from the grounded anode to the drift tube in the 1st gap by the negative pulse of the bipolar pulse and the pulsed ion beam with current density of 40 A/cm^2 and pulse duration of 30 ns was obtained at 50 mm downstream from the anode surface. In addition, part of the ion beam was again accelerated toward the grounded cathode in the 2nd gap by the positive pulse of the bipolar pulse. The pulsed ion beam with the peak ion current density of 10 A/cm^2 and the beam pulse duration of 30 ns was obtained at 30 mm downstream from the cathode surface.
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Report
(3 results)
Research Products
(35 results)
