Study on AlN phosphor based on stacking fault
| Project/Area Number |
20750169
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Inorganic industrial materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TAKEDA Takashi National Institute for Materials Science, ナノセラミックスセンター, 主任研究員 (60344488)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2009: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2008: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | 蛍光体 / 局所構造 / 窒化アルミニウム / ユーロピム / 光物性 / セラミックス |
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| Research Abstract |
The luminescent center europium was studied for the rare earth doped aluminum nitride blue phosphor with silicon nitride. TEM measurement clarified europium and silicon forms the stacking fault between aluminum nitride blocks. Valence analysis showed divalent europium and local structure analysis showed europium occupation at large polyhedron site, coinciding with the luminescent property.
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Report
(3 results)
Research Products
(6 results)
