| Project/Area Number |
20760003
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | Tohoku University |
|---|
Principal Investigator |
TAISHI Toshinori Tohoku University, 金属材料研究所, 助教 (90397307)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
YONENAGA Ichiro 東北大学, 金属材料研究所, 教授 (20134041)
OHNO Yutaka 東北大学, 金属材料研究所, 准教授 (80243129)
TOKUMOTO Yuki 東北大学, 金属材料研究所, 助教 (20546866)
MURAO Yu 東北大学, 大学院・理学部, 修士課程2年
ISE Hideaki 東北大学, 理学部, 4年
OHSAWA Takayuki 東北大学, 理学部, 4年
|
|---|
| Project Period (FY) |
2008 – 2009
|
| Project Status |
Completed (Fiscal Year 2009)
|
| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
|---|
| Keywords | 結晶成長 / 結晶評価 / ゲルマニウム / 成長時導入欠陥 / 転位 / 不純物添加 / 析出物 / 欠陥形成機構 / 引き上げ法 |
|---|
| Research Abstract |
Germanium (Ge) has been expected as materials for high-speed ULSI devices and for the substrate or the bottom cell of III-V-based solar cells. In this study, grown-in defects, such as dislocation, precipitates and void, in Ge crystals grown by the Czochralski (CZ) method were experimentally evaluated and formation mechanisms of such defects were investigated.
As typical results, we succeeded in growing dislocation-free Ge crystals, and the new growth technique was proposed. An equilibrium segregation coefficient of B in Ge was found to be 6.2. When As concentration in a Ge crystal exceeded 1×10^<19>cm^<-3>, plate-like GeAs precipitates were formed along {111} plane.
|
