Lateral spin transport in silicon-based low-dimensional systems
| Project/Area Number |
20760009
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyushu University |
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Principal Investigator |
HAMAYA Kohei Kyushu University, 大学院・システム情報科学研究院, 准教授 (90401281)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2008: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | スピン注入 / 量子ホール系 / 量子ドット / シリコン / スピン伝導 / 半導体量子ドット / 低次元電子系 |
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| Research Abstract |
I explored basic technologies to combine spintronics with semiconductor low-dimensional lateral devices. For Si/SiGe two-dimensional systems, I found that significant spin-dependent tunneling of electrons between quantum-Hall states at low temperatures.
For spin injection into a semiconductor quantum dot, I fabricate InAs quantum dot/ferromagnet lateral devices. As a result, I observed anomalous current suppression for the two-electron tunneling regime.
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Report
(3 results)
Research Products
(15 results)
