Theoretical Study on Tunneling Phenomena in Interface of Semiconductor Devices based on Quantum Dynamics

• Project/Area Number: 20760019
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tohoku University
• Principal Investigator: MURAGUCHI Masakazu Tohoku University, 学際科学国際高等研究センター, 教育研究支援者 (90386623)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2009: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: トンネル現象 / ナノドット・ナノ構造 / 量子ダイナミクス / 二次元電子ガス / 2次元電子ガス / ナノ構造 / ナノドット / 動的相関 / 非平衡状態 / ナノドットメモリー / 電子ガス

Research Abstract

The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important issues for the future nano-electronic devices. In order to reveal the electron tunneling process to the nano-structure, we focused on the dimensionality and the dynamic interaction of electrons. As a result we have revealed a possibility of novel phenomena such as a collective motion of electrons between the two-dimensional electron gas and the nano structure. We have proposed a model for the corresponding collective tunneling. This insight is useful for designing future nano-electronic devices.

Research Products

• [Journal Article] Collective Tunneling Model in Charge Trap Type NVM Cell (2011)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Journal Title: Japanese Journal of Applied Physics 50
  • Peer Reviewed
• [Journal Article] Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure (2011)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Journal Title: Key Engineering Materials vol.470 Pages: 48-53
  • Peer Reviewed
• [Journal Article] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor (2011)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y Shigeta, T.Endoh
  • Journal Title: IEICE Transactions on Electronics E94-C Pages: 730-736
  • NAID: 10029505917
  • Peer Reviewed
• [Journal Article] Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot (2011)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, K.Makihara, M.Ikeda, S.Miyazaki, Y.Shigeta, T.Endoh
  • Journal Title: AIP Conference Series 印刷中
  • Peer Reviewed
• [Journal Article] Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure (2011)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Journal Title: Key Engineering Materials Volume: 470 Pages: 48-53
  • Peer Reviewed
• [Journal Article] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor (2011)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y Shigeta, T.Endoh
  • Journal Title: IEICE Transactions on Electronics Volume: E94-C(印刷中)
  • NAID: 10029505917
  • Peer Reviewed
• [Journal Article] Collective Tunneling Model in Charge Trap Type NVM Cell (2011)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Journal Title: Japanese Journal of Applied Physics Volume: (未定 印刷中)
  • Peer Reviewed
• [Journal Article] Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot (2011)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, K.Makihara, M.Ikeda, S.Miyazaki, Y.Shigeta, T.Endoh
  • Journal Title: AIP Conference Series Volume: (未定 印刷中)
  • Peer Reviewed
• [Journal Article] Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices (2010)
  • Author(s): M.Muraguchi, T.Endoh, Y.Takada, Y.Sakurai, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta
  • Journal Title: Physica E Pages: 2602-2605
  • Peer Reviewed
• [Journal Article] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot (2010)
  • Author(s): M.Muraguchi, Y.Takada, S.Nomura, T.Endoh, K.Shiraishi
  • Journal Title: IEICE Transacions on Electronics E93-C
  • NAID: 10026825422
  • Peer Reviewed
• [Journal Article] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot (2010)
  • Author(s): M.Muraguchi, Y.Takada, S.Nomura, T.Endoh, Kenji Shiraishi
  • Journal Title: IEICE Transactions on Electronics Volume: E93-C Pages: 563-568
  • NAID: 10026825422
  • Peer Reviewed
• [Journal Article] Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices (2010)
  • Author(s): M.Muraguchi, T.Endoh, Y.Takada, Y.Sakurai, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta
  • Journal Title: Physica E (未定, In Press)
  • Peer Reviewed
• [Journal Article] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot (2010)
  • Author(s): Masakazu Muraguchi, Yukihiro Takada, Shintaro Nomura, Tetsuo Endoh, Kenji Shiraishi
  • Journal Title: IEICE Transacions on Electronics No.5(to be published)
  • NAID: 10026825422
  • Peer Reviewed
• [Journal Article] Theoretical Study of the Electron Dynamics of a Quantum Wire Coupled with the Quantum Dots (2009)
  • Author(s): M.Muraguchi, Y.Takada, S.Nomura, K.Shiraishi
  • Journal Title: Journal of Physics : Conference Series 150
  • Peer Reviewed
• [Journal Article] Theoretical study of the time-dependent phenomenon of photon assisted tunneling through a charged quantum dot (2009)
  • Author(s): M.Muraguchi, K.Shiraishi, K.Takeda
  • Journal Title: Journal of Physics : Condensed Matter 21
  • Peer Reviewed
• [Journal Article] Theoretical study of the time-dependent phenomenon of photon assisted tunneling through a charged quantum dot (2009)
  • Author(s): M. Muraguchi
  • Journal Title: Journal of Physics : Condensed Matter 21
  • Peer Reviewed
• [Journal Article] Theoretical Study of the Electron Dynamics of a Quantum Wire Coupled with the Quantum Dots (2009)
  • Author(s): M. Muraguchi
  • Journal Title: Journal of Physics : Conference Series 150
  • Peer Reviewed
• [Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron gas wealdy coupled with a discrete level (2008)
  • Author(s): M.Muraguchi, Y.Takada, S.Nomura, K.Shiraishi
  • Journal Title: Japanese Journal of Applied Physics 47 Pages: 7807-7811
  • Peer Reviewed
• [Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron gas wealdy coupled with a discrete level (2008)
  • Author(s): M. Muraguchi
  • Journal Title: Japanese Journal of Applied Physics 47 Pages: 7807-7811
  • Peer Reviewed
• [Presentation] 2次元電子ガス-量子ドット界面における電子トンネル過程に対する微視的考察 (2010)
  • Author(s): 村口正和, 高田幸宏, 櫻井蓉子, 野村晋太郎, 白石賢二, 牧原克典, 池田弥央, 宮崎誠一, 重田育照, 遠藤哲郎
  • Organizer: 日本物理学会2010年春季大会
  • Place of Presentation: 岡山大学(岡山県)
  • Year and Date: 2010-03-21
• [Presentation] 2次元電子ガス―量子ドット界面における電子トンネル過程に対する微視的考察 (2010)
  • Author(s): 高田幸宏
  • Organizer: 日本物理学会2010年春季大会
  • Place of Presentation: 岡山大学(岡山県)
  • Year and Date: 2010-03-21
• [Presentation] Collective Tunneling Model in Charge Trap Type NVM Cell (2010)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Organizer: International Conference on. Solid State Devices and Materials (SSDM2010), E-3-2
  • Place of Presentation: Tokyo
• [Presentation] Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot (2010)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, K.Makihara, M.Ikeda, S.Miyazaki, Y.Shigeta, T.Endoh
  • Organizer: International Conference on the Physics of Semiconductors, Th-P2-105.
  • Place of Presentation: Seoul, Korea
• [Presentation] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor (2010)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y Shigeta, T.Endoh
  • Organizer: 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 8A-4
  • Place of Presentation: Tokyo, Japan, June
• [Presentation] Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure (2010)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Organizer: ISTESNE 2010, ISTESNE 2010
  • Place of Presentation: Tokyo
• [Presentation] Bias Voltage Sweep Speed Dependence of Electron Injection in Si-Nano-Dots Floating Gate MOS Capacitor (2010)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Organizer: IMFEDK2010, B-2
  • Place of Presentation: Osaka
• [Presentation] Bias Voltage Sweep Speed Dependence of Electron Injection in Si-Nano-Dots Floating Gate MOS Capacitor (2010)
  • Author(s): M.Muraguchi, Y, Sakurai, Y.Takada, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta, T.Endoh
  • Organizer: International Meeting for Future of Electron Devices, Kansai 2010
  • Place of Presentation: 大阪
• [Presentation] Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure (2010)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Organizer: International Symposium on Technology Evolution for Silicon Nano-Electronics
  • Place of Presentation: 東京
• [Presentation] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor (2010)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta, T.Endoh
  • Organizer: 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: 東京
• [Presentation] Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot (2010)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, K.Makihara, M.Ikeda, S.Miyazaki, Y.Shigeta, T.Endoh
  • Organizer: International Conference on the Physics of Semiconductors
  • Place of Presentation: 東京
• [Presentation] Collective Tunneling Model in Charge Trap Type NVM Cell (2010)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: 東京
• [Presentation] New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor (2009)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Organizer: International Conference on.Solid State Devices and Materials (SSDM2009)
  • Place of Presentation: Sendai, Japan.
  • Year and Date: 2009-10-07
• [Presentation] New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor (2009)
  • Author(s): 村口正和
  • Organizer: International Conference on.Solid State Devices and Materials(SSDM2009)
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2009-10-07
• [Presentation] 円-リング複合型量子ドットのFloquet状態 (2009)
  • Author(s): 村口正和, 遠藤哲郎, 杉山功太, 多川知希, 奧西拓馬, 武田京三郎
  • Organizer: 日本物理学会2009年秋季大会
  • Place of Presentation: 熊本大学(熊本県)
  • Year and Date: 2009-09-25
• [Presentation] 円―リング複合型量子ドットの Floquet 状態 (2009)
  • Author(s): 村口正和
  • Organizer: 日本物理学会2009年秋季大会
  • Place of Presentation: 熊本大学(熊本県)
  • Year and Date: 2009-09-25
• [Presentation] 1, Importance of the Electronic State on the Electrode in Electron, Tunneling Processes between the Electrode and the Quantum Dot (2009)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Organizer: The 14th International Conference on Modulated Semiconductor structures (MSS-14)
  • Place of Presentation: Kobe, Japan
  • Year and Date: 2009-07-20
• [Presentation] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot (2009)
  • Author(s): 村口正和
  • Organizer: The 14th International Conference on Modulated Semiconductor structures(MSS-14)
  • Place of Presentation: Kobe, Japan
  • Year and Date: 2009-07-20
• [Presentation] Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices (2009)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Organizer: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2009
  • Place of Presentation: Busan, Korea
  • Year and Date: 2009-06-25
• [Presentation] Study of Electronic State in Electrode for Nano-Electronic Devices (2009)
  • Author(s): M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
  • Organizer: The 2009 International Meeting for Future of Electron Devices,Kansai
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2009-05-14
• [Presentation] Study of Electronic State in Electrode for Nano-Electronic Devices (2009)
  • Author(s): 村口正和
  • Organizer: The 2009 International Meeting for Future of Electron Devices, Kansai
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2009-05-14
• [Presentation] 電子ガス-量子ドット結合系における電子ダイナミクスII (2009)
  • Author(s): 村口正和, 遠藤哲郎, 櫻井蓉子, 野村晋太郎, 高田幸宏, 白石賢二, 池田弥央,牧原克典, 宮崎誠一, 斉藤慎一
  • Organizer: 日本物理学会春季大会
  • Place of Presentation: 立教大学
  • Year and Date: 2009-03-30
• [Presentation] New insight into Tunneling Process between Quantum Dot and Electron Gas (2009)
  • Author(s): M.Muraguchi, T.Endoh, Y.Sakurai, S.Nomura, Y.Takada, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta
  • Organizer: America Physical Society 2009 March Meeting.
  • Place of Presentation: Pittsburg, USA.
  • Year and Date: 2009-03-19
• [Presentation] New insight into Tunneling Process between Quantum Dot and Electron Gas (2009)
  • Author(s): Masakazu Muraguchi
  • Organizer: America Physical Society 2009 March Meeting
  • Place of Presentation: Pittsburg, USA
  • Year and Date: 2009-03-19
• [Presentation] 少数個の電子で動く未来デバイスの姿 (2009)
  • Author(s): 村口正和、遠藤哲郎、白石賢二、野村晋太郎、櫻井蓉子、高田幸宏、宮崎誠一、牧原克典、池田弥央
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
• [Presentation] Theoretical investigation of quantum dot coupled to a two-dimensional electron system (2008)
  • Author(s): M.Muraguchi, Y.Takada, Y.Sakurai, T.Endoh, S.Nomura
  • Organizer: 13^<th> Advanced Heterostructures and Nanostructures Workshop.
  • Place of Presentation: Hawaii, USA.
  • Year and Date: 2008-12-10
• [Presentation] Theoretical investigation of quantum dot coupled to a two-dimensional electron system (2008)
  • Author(s): Masakazu Muraguchi
  • Organizer: 13^<th> Advanced Heterostructures and Nanostructures Workshop
  • Place of Presentation: Hawaii, USA
  • Year and Date: 2008-12-10
• [Presentation] 電子ガスー量子ドット結合系における電子ダイナミクス (2008)
  • Author(s): 村口正和, 高田幸宏, 櫻井蓉子, 野村晋太郎, 斎藤慎一, 白石賢二
  • Organizer: 日本物理学会秋季大会
  • Place of Presentation: 岩手大学
  • Year and Date: 2008-09-21
• [Presentation] 信頼性を支配するトンネル現象に対する新しい理解 (2008)
  • Author(s): 村口正和, 白石賢二
  • Organizer: 第55回応用物理学関係連合講演会(シンポジウム講演)
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-02
• [Presentation] 信頼性を支配するトンネル現象に対する新しい理解(シンポジウム講演) (2008)
  • Author(s): 村口正和
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-02
• [Presentation] Theoretical Study of the Electron Dynamics of a Quantum Wire Coupled with the Quantum Dots (2008)
  • Author(s): M.Muraguchi, Y.Takada, S.Nomura, K.Shiraishi
  • Organizer: International conference on Low Temperature Physics.
  • Place of Presentation: Amsterdam, Holland.
  • Year and Date: 2008-08-06
• [Presentation] Theoretical Study of the Electron Dynamics of a Quantum Wire Coupled with the Quantum Dots (2008)
  • Author(s): M. Muraguchi
  • Organizer: International conference on Low Temperature Physics
  • Place of Presentation: Amsterdam, Holland
  • Year and Date: 2008-08-06
• [Presentation] Theoretical Study on Electron Dynamics for a Two-dimensional Electron Gas Coupled with a Quantum Dot (2008)
  • Author(s): M.Muraguchi
  • Organizer: International Conference on the Physics of Semiconductors.
  • Place of Presentation: Rio de Janeiro,Brazil.
  • Year and Date: 2008-07-31
• [Presentation] Theoretical Study on Electron Dynamics for a Two-dimensional Electron Gas Coupled with a Quantum Dot (2008)
  • Author(s): M. Muraguchi
  • Organizer: International Conference on the Physics of Semiconductors
  • Place of Presentation: Rio de Janeiro, Brazil
  • Year and Date: 2008-07-31
• [Presentation] Theoretical Study on Time-dependent Phenomena of Photon-Assisted Tunneling through Charged Quantum Dot (2008)
  • Author(s): M.Muraguchi, T.Okunishi, K.Shiraishi, K.Takeda
  • Organizer: International Conference on Quantum Simulators and Design 2008.
  • Place of Presentation: 東京都江東区,Japan
  • Year and Date: 2008-06-02
• [Presentation] Theoretical Study on Time-dependent Phenomena of Photon-Assisted Tunneling through Charged Quantum Dot (2008)
  • Author(s): M. Muraguchi
  • Organizer: International Conference on Quantum Simulators and Design 2008
  • Place of Presentation: 東京都江東区, Japan
  • Year and Date: 2008-06-02