Strain-released mechanism and electronic properties in Ge/Si hetero-structures

• Project/Area Number: 20760020
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: FUJIMOTO Yoshitaka Tokyo Institute of Technology, 大学院・理工学研究科, 特任助教 (70436244)
• Project Period (FY): 2008 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2008: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
• Keywords: 計算物理 / ナノ材料 / 半導体物性 / 結晶成長 / シリコン / ゲルマニウム / 半導体表面界面 / 刃状転位 / 第一原理計算 / ナノテクノロジー

Research Abstract

We investigate atomic structures and energetics of 90°dislocation cores in Ge films on Si substrate using the first-principles total-energy calculations. The dislocation core structure consisting of five- and seven-membered Ge rings is proposed and found to be stable with increasing Ge overlayers. The scanning tunneling microscopy images of 90°dislocation core structure are calculated and show the possibility to observe the proposed core structure.

Research Products

• [Journal Article] Atomic structures and energetics of 90°dislocation cores in Ge films on Si(001) (2010)
  • Author(s): Yoshitaka Fujimoto, Atsushi Oshiyama
  • Journal Title: Physical Review B Vol.81
  • Peer Reviewed
• [Journal Article] Atomic structures and energetics of 90°dislocation cores in Ge films on Si(001) (2010)
  • Author(s): Y.Fujimoto, A.Oshiyama
  • Journal Title: Physical Review B (In press)
  • Peer Reviewed
• [Journal Article] A new crystalline phase of four-fold coordinated silicon and germanium (2008)
  • Author(s): Yoshitaka Fujimoto, Takashi Koretsune, Susumu Saito, Takashi Miyake, Atsushi Oshiyama
  • Journal Title: New Journal of Physics Vol.10
  • Peer Reviewed
• [Journal Article] A new crystalline phase of four-fold coordinated silicon and germanium (2008)
  • Author(s): Yoshitaka Fujimoto, et.al.
  • Journal Title: New Journal of Physics 10 Pages: 0830011-8
  • Peer Reviewed
• [Presentation] 窒素ドープされたカーボンナノチューブのエネルギー論と電子特性-不純物密度の観点から- (2010)
  • Author(s): 藤本義隆、斎藤晋
  • Organizer: 日本物理学会第65回年次大会
  • Place of Presentation: 岡山大学
  • Year and Date: 2010-03-20
• [Presentation] 窒素ドープされたカーボンナノチューブのエネルギー論と電子構造-不純物の観点から- (2010)
  • Author(s): 藤本義隆、斎藤晋
  • Organizer: 日本物理学会
  • Place of Presentation: 岡山大学 津島キャンパス
  • Year and Date: 2010-03-20
• [Presentation] 窒素ドープ型カーボンナノチューブのエネルギー論と電子状態 (2010)
  • Author(s): 藤本義隆、斎藤晋
  • Organizer: 第38回フラーレン・ナノチューブ総合シンポジウム
  • Place of Presentation: 名城大学
  • Year and Date: 2010-03-02
• [Presentation] 窒素ドープ型カーボンナノチューブのエネルギー論と電子構造 (2010)
  • Author(s): 藤本義隆、斎藤晋
  • Organizer: フラーレン・ナノチューブ総合シンポジウム
  • Place of Presentation: 名城大学
  • Year and Date: 2010-03-02
• [Presentation] 窒素ドープ型カーボンナノチューブのエネルギー論と電子構造 (2009)
  • Author(s): 藤本義隆、斎藤晋
  • Organizer: 東京工業大学グローバルCOEプログラム「ナノサイエンスを拓く量子物理学拠点」公開シンポジウム2009
  • Place of Presentation: 東京工業大学
  • Year and Date: 2009-12-09
• [Presentation] 三量体ピリジン型欠陥をもつカーボンナノチューブの構造安定性と電子構造 (2009)
  • Author(s): 藤本義隆、斎藤晋
  • Organizer: 日本物理学会2009年秋季大会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-09-25
• [Presentation] 三量体ピリジン型欠陥をもつカーボンナノチューブの構造安定性と電子構造 (2009)
  • Author(s): 藤本義隆、斎藤晋
  • Organizer: 日本物理学会
  • Place of Presentation: 熊本大学 黒髪キャンパス
  • Year and Date: 2009-09-25
• [Presentation] ピリジン型欠陥をもつカーボンナノチューブの原子・電子構造 (2009)
  • Author(s): 藤本義隆、斎藤晋
  • Organizer: 第37回フラーレン・ナノチューブ総合シンポジウム
  • Place of Presentation: つくば国際会議場
  • Year and Date: 2009-09-02
• [Presentation] ピリジン型欠陥をもつカーボンナノチューブの原子・電子構造 (2009)
  • Author(s): 藤本義隆、斎藤晋
  • Organizer: フラーレン・ナィチューブ総合シンポジウム
  • Place of Presentation: つくば国際会議場
  • Year and Date: 2009-09-02
• [Presentation] IV族元素の四配位新結晶相-カーボン、シリコン、ゲルマニウムによるポリマー相アームチェアナノチューブ- (2009)
  • Author(s): 藤本義隆、是常隆、斎藤晋、三宅隆、押山淳
  • Organizer: 特定領域・公開研究会ナノチューブナノエレクトロニクスの理論
  • Place of Presentation: 筑波大学東京キャンパス
  • Year and Date: 2009-04-17
• [Presentation] Atomic structure and electronic property of new crystalline Si and Ge (2009)
  • Author(s): Y. Fujimoto、T. Koretsune、S. Saito, T. Miyake、A. Oshiyama
  • Organizer: International Symposium on Nanoscience and Quantum Physics
  • Place of Presentation: Tokyo
  • Year and Date: 2009-02-25
• [Presentation] Atomic structure and electronic property of new crystalline Si and Ge (2009)
  • Author(s): Y. Fujimoto, K. Koretsune, S. Saito, T. Miyake, A. Oshivama
  • Organizer: International Symposium on Nanoscience and Quantum Physirs
  • Place of Presentation: International House of Japan, Tokyo
  • Year and Date: 2009-02-25
• [Presentation] Atomic geometry and electronic structures of new crystalline Si and Ge (2008)
  • Author(s): Y. Fujimoto、T. Koretsune、S. Saito、T. Miyake、A. Oshiyama
  • Organizer: The 11th Asian Workshop On First-Principles Electronic Structure Calculations
  • Place of Presentation: Taiwan
  • Year and Date: 2008-11-04
• [Presentation] Atomic geometry and electronic structure of new crystalline Si and Ge (2008)
  • Author(s): Y. Fujimoto, K. Koretsune, S. Saito, T. Miyake, A. Oshiyama
  • Organizer: The 11^<th> Asian Workshop On First-Principles Electronic Structure Calculations
  • Place of Presentation: National Sun Yat-sen University, Taiwan
  • Year and Date: 2008-11-04
• [Presentation] 第一原理計算によるSi/Ge膜中の原子・電子構造 (2008)
  • Author(s): 藤本義隆、岩田潤一、押山淳
  • Organizer: 日本物理学会2008年秋季大会
  • Place of Presentation: 岩手大学
  • Year and Date: 2008-09-23
• [Presentation] シリコンとゲルマニウムの四配位新物質 (2008)
  • Author(s): 藤本義隆、是常隆、斎藤晋、三宅隆、押山淳
  • Organizer: 日本物理学会2008年秋季大会
  • Place of Presentation: 岩手大学
  • Year and Date: 2008-09-23
• [Presentation] 第一原理計算によるSi/Ge膜中の転位の原子・電子構造 (2008)
  • Author(s): 藤本義隆、岩田潤一、押山淳
  • Organizer: 日本物理学会
  • Place of Presentation: 岩手大学 上田キャンパス
  • Year and Date: 2008-09-23
• [Presentation] シリコンとゲルマニウムの四配位新物質 (2008)
  • Author(s): 藤本義隆、是常隆、斎藤晋、三宅隆、押山淳
  • Organizer: 日本物理学会
  • Place of Presentation: 岩手大学 上田キャンパス
  • Year and Date: 2008-09-23
• [Presentation] Formation and Stability of Dislocation cores in Ge/Si(001) Heterostructures (2008)
  • Author(s): Y. Fujimoto, A. Oshiyama
  • Organizer: 1st International Conference of The Grand Challenge to Next-Generation Integrated Nanoscience
  • Place of Presentation: Tokyo
  • Year and Date: 2008-06-04
• [Presentation] Formation and Stability of Dislocation Cores in Ge/Si(001)Heterostructures (2008)
  • Author(s): Y. Fujimoto, A. Oshiyama
  • Organizer: 1^<st> International Conference of The Grand Challenge to Next-Generation Integrated Nanoscience
  • Place of Presentation: Tokyo Academic Park, Tokyo
  • Year and Date: 2008-06-04
• [Presentation] Structural and electronic properties of new crystalline phase of Si and Ge (2008)
  • Author(s): Y. Fujimoto, T. Koretsune, S. Saito, T. Miyake, A. Oshiyama
  • Organizer: International Conference on Quantum Simulators and Design 2008
  • Place of Presentation: Tokyo
  • Year and Date: 2008-06-02
• [Presentation] Structural and electronic properties of new crystalline phase of Si and Ge (2008)
  • Author(s): Y. Fujimoto, K. Koretsune, S. Saito, T. Miyake, A. Oshiyama
  • Organizer: International Conference on Quantum Simulators and Design 2008
  • Place of Presentation: National Museum of Emerging Science and Innovation, Tokyo
  • Year and Date: 2008-06-02