Strain-released mechanism and electronic properties in Ge/Si hetero-structures
Project/Area Number |
20760020
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Single-year Grants |
Research Field |
Thin film/Surface and interfacial physical properties
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Research Institution | Tokyo Institute of Technology |
Principal Investigator |
FUJIMOTO Yoshitaka Tokyo Institute of Technology, 大学院・理工学研究科, 特任助教 (70436244)
|
Project Period (FY) |
2008 – 2009
|
Project Status |
Completed (Fiscal Year 2009)
|
Budget Amount *help |
¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
|
Keywords | 計算物理 / ナノ材料 / 半導体物性 / 結晶成長 / シリコン / ゲルマニウム / 半導体表面界面 / 刃状転位 / 第一原理計算 / ナノテクノロジー |
Research Abstract |
We investigate atomic structures and energetics of 90°dislocation cores in Ge films on Si substrate using the first-principles total-energy calculations. The dislocation core structure consisting of five- and seven-membered Ge rings is proposed and found to be stable with increasing Ge overlayers. The scanning tunneling microscopy images of 90°dislocation core structure are calculated and show the possibility to observe the proposed core structure.
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Report
(3 results)
Research Products
(26 results)