| Project/Area Number |
20760023
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Thin film/Surface and interfacial physical properties
|
|---|
| Research Institution | Kyoto Institute of Technology |
|---|
Principal Investigator |
TAKAHASHI Kazuo Kyoto Institute of Technology, 工芸科学研究科, 准教授 (50335189)
|
|---|
| Project Period (FY) |
2008 – 2009
|
| Project Status |
Completed (Fiscal Year 2009)
|
| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2008: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
|
|---|
| Keywords | プラズマプロセス / プラズマ加工 / エッチング / ナノデバイス |
|---|
| Research Abstract |
This study was for plasma etching technology in fabrication of ULSI MOSFET gate with a few ten nm size and hafnium oxide as an insulating material. In CF_4/Ar plasmas with addition of CO or H_2 resulting in making the gas phase carbon-rich, the etch rates of Si and SiO_2 were decreased. On the other hand, that of HfO_2 was increased, which implied that HfO_2 could be etched in the reaction of carbonized-hafnium formed as an etch product.
|
