Analyses of chemical reaction producing carbonized-metal for ULSI plasma etching process
| Project/Area Number |
20760023
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Kyoto Institute of Technology |
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Principal Investigator |
TAKAHASHI Kazuo Kyoto Institute of Technology, 工芸科学研究科, 准教授 (50335189)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2008: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | プラズマプロセス / プラズマ加工 / エッチング / ナノデバイス |
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| Research Abstract |
This study was for plasma etching technology in fabrication of ULSI MOSFET gate with a few ten nm size and hafnium oxide as an insulating material. In CF_4/Ar plasmas with addition of CO or H_2 resulting in making the gas phase carbon-rich, the etch rates of Si and SiO_2 were decreased. On the other hand, that of HfO_2 was increased, which implied that HfO_2 could be etched in the reaction of carbonized-hafnium formed as an etch product.
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Report
(3 results)
Research Products
(10 results)
