High Resolution Mapping of Single Event Transient Current Due to High Energy Heavy Ion
| Project/Area Number |
20760051
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied physics, general
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| Research Institution | Japan Atomic Energy Agency |
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Principal Investigator |
ONODA Shinobu Japan Atomic Energy Agency, 量子ビーム応用研究部門, 研究員 (30414569)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2010: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2008: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | シングルイベント過渡電流 / トランジスタ / マッピング / 放射線 / 電界効果トランジスタ / MOSFET |
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| Research Abstract |
The map of transient current induced by a single ion at silicon carbide transistors is measured. The mechanism of transient current is analyzed by using numerical device simulator. On the other hand, the novel mapping system has been developed. By using ZnS as a phosphor, the map of transient current is successfully observed although the spatial resolution is about several tens of micrometers. By using YAG:Ce and Diamond instead of ZnS, the spatial resolution increases about tenfold.
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Report
(4 results)
Research Products
(22 results)
