| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2010: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2008: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Research Abstract |
The map of transient current induced by a single ion at silicon carbide transistors is measured. The mechanism of transient current is analyzed by using numerical device simulator. On the other hand, the novel mapping system has been developed. By using ZnS as a phosphor, the map of transient current is successfully observed although the spatial resolution is about several tens of micrometers. By using YAG:Ce and Diamond instead of ZnS, the spatial resolution increases about tenfold.
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