Preparation of Semiconductor Field Effect Transistor for electron spin controlling using magneto-electric effect and exchange interaction
| Project/Area Number |
20760197
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
YOKOTA Takeshi Nagoya Institute of Technology, 大学院・工学研究科, 助教 (10402645)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2008: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | 電子・電気材料 / 電気磁気効果 / 磁気抵抗 / MISキャパシタ / スピントロニクス |
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| Research Abstract |
This research was focused on an controlling of spins in semiconductor using magneto-electric (ME) material : Cr_2_O3, which can be controlled their magnetic or ferroelectric properties can be controlled by an external electric or magnetic field. In this purpose, we prepared Cr_2O_3/ferromagnetic/CeO_2/Si MIS capacitor. We revealed that the capacitor can be controlled an amount of injected charge depending on an external magnetic and electric field applying.
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Report
(3 results)
Research Products
(52 results)
