Optical properties of rare-earth doped semiconducting silicides

• Project/Area Number: 20760199
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: TERAI Yoshikazu Osaka University, 工学研究科, 講師 (90360049)
• Project Period (FY): 2008 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000); Fiscal Year 2009: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2008: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
• Keywords: シリサイド半導体 / 希土類添加半導体 / 半導体光物性 / 鉄シリサイド / シリコンオプトエレクトロニクス / 変調分光法 / フォトリフレクタンス / エピタキシャル成長 / 分子線エピタキシー法

Research Abstract

We have investigated optical properties of rare-earth doped semiconducting silicides grown by ion implantation to develop silicon-based optoelectronics devices. Rare-earth ion of Er^<3+> was doped into β-FeSi_2 epitaxial films on Si substrate. The Er-doped β-FeSi_2 showed 1.5μm emission which is a wavelength for fiber optics communications.

Research Products

• [Journal Article] Modifications of direct transition energies in β-FeSi2 epitaxial films grown by molecular beam epitaxy (2009)
  • Author(s): K. Noda, Y. Terai, S. Hashimoto, K. Yoneda, Y. Fujiwara
  • Journal Title: Applied Physics Letters 94(24)
  • Peer Reviewed
• [Journal Article] Photoreflectance study of β-FeSi2 epitaxial films grown by molecular beam epitaxy (2009)
  • Author(s): Y. Terai, K. Noda, S. Hashimoto, Y. Fujiwara
  • Journal Title: Journal of Physics: Conference Series 165
  • Peer Reviewed
• [Journal Article] Epitaxial growth of Al-doped β-FeSi2 on Si(111) substrate by reactive deposition epitaxy (2009)
  • Author(s): Y. Terai, S. Hashimoto, K. Noda, Y. Fujiwara
  • Journal Title: Physica Status Solidi (c) 6(6) Pages: 1488-1491
  • Peer Reviewed
• [Journal Article] Modifications of direct transition energies in β-FeSi_2, epitaxial films grown by molecular beam epitaxy (2009)
  • Author(s): K.Noda
  • Journal Title: Applied Physics Letters 94
  • Peer Reviewed
• [Journal Article] Photoreflectance Study of β-FeSi_2 Epitaxial Films Grown by Molecular Beam Epitaxy (2009)
  • Author(s): Y.Terai
  • Journal Title: Journal of Physcis : Conference series 165
  • Peer Reviewed
• [Journal Article] Epitaxial growth of Al-doped β-FeSi_2 on Si(111) substrate by reactive deposition epitaxy (2009)
  • Author(s): Y.Terai
  • Journal Title: Physica Status Solidi c(c) 6 Pages: 1488-1491
  • Peer Reviewed
• [Journal Article] Improved initial epitaxial growth of β-FeSi2 on Si(111) substrate by Al-doping (2008)
  • Author(s): S. Hashimoto, Y. Terai, Y. Fujiwara
  • Journal Title: Physica Status Solidi (c) 5(9) Pages: 3159-3161
  • Peer Reviewed
• [Journal Article] Improved Initial Epitaxial Growth of β-FeSi_2 on Si(111) Substrate by Al-doping (2008)
  • Author(s): Syoutaro Hashimoto
  • Journal Title: Physica Status Solidi (c) 5 Pages: 3159-3161
  • Peer Reviewed
• [Journal Article] Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation
  • Author(s): Y. Terai, T. Tsuji, K. Noda, Y. Fujiwara
  • Journal Title: Physica E (in press)
  • Peer Reviewed
• [Journal Article] Photoluminescence properties of Er-doped β-FeSi_2 grown by ion implantation
  • Author(s): Y.Terai
  • Journal Title: Physica E (印刷中)
  • Peer Reviewed
• [Journal Article] Epitaxial growth of Al-doped β-FeSi_2 on Si(111) substrate by reactive deposition epitaxy
  • Author(s): Yoshikazu Terai
  • Journal Title: Physica Status Solidi (c) (in press)
  • Peer Reviewed
• [Journal Article] Photoreflectance Study of β-FeSi_2 Epitaxial Films Grown by Molecular Beam Epitaxy
  • Author(s): Yoshikazu Terai
  • Journal Title: Journal of Physcis : Conference series (in press)
  • Peer Reviewed
• [Presentation] β-FeSi2エピタキシャル膜におけるPRスペクトルの成長方位依存性 (2010)
  • Author(s): 野田慶一、寺井慶和、米田圭佑、三浦直行、鵜殿治彦、藤原康文
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学, 平塚市
  • Year and Date: 2010-03-19
• [Presentation] 変調分光法による鉄シリサイド半導体のバンド構造評価 (2010)
  • Author(s): 寺井慶和, 藤原康文
  • Organizer: 応用物理学会関西支部セミナー
  • Place of Presentation: 大阪大学, 吹田市
  • Year and Date: 2010-03-12
• [Presentation] Si/ β-FeSi2/Siダブルヘテロ構造におけるフォトリフレクタンス測定 (2009)
  • Author(s): 米田圭佑、野田慶一、寺井慶和、藤原康文
  • Organizer: 日本材料学会半導体エレクトロニクス部門研究会
  • Place of Presentation: 大阪工業大学、大宮キャンパス
  • Year and Date: 2009-12-19
• [Presentation] Si/ β-FeSi2/Siダブルへテロ構造における変調反射スペクトル (2009)
  • Author(s): 米田圭佑, 野田慶一, 寺井慶和, 藤原康文
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学, 富山市
  • Year and Date: 2009-09-10
• [Presentation] Photoluminescence properties of Er-doped β-FeSi_2 grown by ion implantation (2009)
  • Author(s): Y.Terai
  • Organizer: The 14th International Conference on Modulated Semiconductor structures
  • Place of Presentation: (富山大学 富山市)
  • Year and Date: 2009-09-10
• [Presentation] Direct Bandgap Modifications in β-FeSi2 Epitaxial Films Revealed by Photoreflectance Measurement (2009)
  • Author(s): K. Noda, K. Yoneda, Y. Terai, Y. Fujiwara
  • Organizer: 5th Handai Nanoscience and Nanotechnology International Symposium
  • Place of Presentation: Icho-Kaikan, Osaka University, Japan
  • Year and Date: 2009-09-01
• [Presentation] フォトリフレクタンス法によるβ-FeSi2およびAl添加β-FeSi2の表面電界強度の評価 (2009)
  • Author(s): 米田圭佑、野田慶一、寺井慶和、藤原康文
  • Organizer: 第12回シリサイド系半導体夏の学校
  • Place of Presentation: 福岡県筑紫野市湯町二日市温泉大観荘
  • Year and Date: 2009-08-02
• [Presentation] β-FeSi2エピタキシャル膜における直接遷移エネルギーの熱処理温度依存性 (2009)
  • Author(s): 野田慶一、米田圭佑、寺井慶和、藤原康文
  • Organizer: 第12回シリサイド系半導体夏の学校
  • Place of Presentation: 福岡県筑紫野市湯町二日市温泉大観荘
  • Year and Date: 2009-08-02
• [Presentation] β-FeSi_2エピタキシャル膜における直接遷移エネルギーの熱処理温度依存性 (2009)
  • Author(s): 野田慶一
  • Organizer: 第12回シリサイド系半導体夏の学校
  • Place of Presentation: Daikanso, Fukuoka
  • Year and Date: 2009-08-02
• [Presentation] フォトリフレクタンス法によるβ-FeSi_2およびA1添加β-FeSi_2の表面電界強度の評価 (2009)
  • Author(s): 米田圭佑
  • Organizer: 第12回シリサイド系半導体夏の学校
  • Place of Presentation: Daikanso, Fukuoka
  • Year and Date: 2009-08-02
• [Presentation] β-FeSi_2エピタキシャル膜における直接遷移端の温度依存性 (2009)
  • Author(s): 野田慶一
  • Organizer: 秋期第69回応用物理学関係連合学術講演会
  • Place of Presentation: (Kobe International Conference Center, Kobe, Japan)
  • Year and Date: 2009-07-19
• [Presentation] Si/β-FeSi_2/Siダブルヘテロ構造における変調反射スペクトル (2009)
  • Author(s): 米田圭佑
  • Organizer: 秋期第69回応用物理学関係連合学術講演会
  • Place of Presentation: (Kobe International Conference Center, Kobe, Japan)
  • Year and Date: 2009-07-19
• [Presentation] Band-gap modifications of β-FeSi_2 epitaxial films grown by molecular beam epitaxy (2009)
  • Author(s): Keiichi Noda
  • Organizer: 28th Electronic Materials Symposium
  • Place of Presentation: Laforet Biwako, Shiga
  • Year and Date: 2009-07-09
• [Presentation] Band-gap modifications of β-FeSi2 epitaxial films grown by molecular beam epitaxy (2009)
  • Author(s): K. Noda, K. Yoneda, Y. Terai, Y. Fujiwara
  • Organizer: 28th Electronic Materials Symposium
  • Place of Presentation: ラフォーレ琵琶湖、草津市
  • Year and Date: 2009-07-08
• [Presentation] Si(111)基板上のβ-FeSi2エピタキシャル膜におけるバンドギャップ変調 (2009)
  • Author(s): 野田慶一, 米田圭佑, 寺井慶和, 藤原康文
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学、つくば市
  • Year and Date: 2009-04-01
• [Presentation] Si(111)基板上のβ-FeSi2エピタキシャル膜におけるフォトリフレクタンス評価 (2009)
  • Author(s): 野田慶一、米田圭佑、寺井慶和、藤原康文
  • Organizer: 日本材料学会半導体エレクトロニクス部門研究会
  • Place of Presentation: 大阪大学, 吹田市
  • Year and Date: 2009-03-17
• [Presentation] Photoluminescence properties of Er-doped β-FeSi2 grown by ion beam synthesis methods (2009)
  • Author(s): Y. Terai, T. Tsuji, K. Noda, Y. Fujiwara
  • Organizer: 14th International Conference on Modulated Semiconductor structures (MSS-14)
  • Place of Presentation: Kobe, Japan
• [Presentation] Photoreflectance study of β-FeSi_2 epitaxial films grown by molecular beam epitaxy (2008)
  • Author(s): Yoshikazu Terai
  • Organizer: International Conference on Advanced Structural and Functional Materials Design
  • Place of Presentation: Hotel Hankyu Expo Park, Osaka
  • Year and Date: 2008-11-11
• [Presentation] Epitaxial growth of Al-doped β-FeSi_2 on Si(111) substrate by reaction deposition epitaxy (2008)
  • Author(s): Yoshikazu Terai
  • Organizer: 35th International Symposium on Compound Semiconductors
  • Place of Presentation: Europa-Park, Rust, Germany
  • Year and Date: 2008-09-24
• [Presentation] β-FeSi2エピタキシャル膜における直接遷移端の温度依存性 (2008)
  • Author(s): 野田慶一, 米田圭佑, 寺井慶和, 藤原康文
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学, 富山市
  • Year and Date: 2008-09-10
• [Presentation] Al添加β-FeSi2におけるフォトリフレクタンス測定 (2008)
  • Author(s): 野田慶一、橋本正太郎、寺井慶和、藤原康文
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学, 春日井市
  • Year and Date: 2008-09-03
• [Presentation] Al添加β-FeSi_2におけるフォトリフレクタンス測定 (2008)
  • Author(s): 野田慶一
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学、春日井市
  • Year and Date: 2008-09-03
• [Presentation] RDE法により作製したAl添加β-FeSi2エピタキシャル膜の結晶構造解析 (2008)
  • Author(s): 野田慶一, 寺井慶和, 橋本正太郎, 藤原康文
  • Organizer: 第11回シリサイド系半導体夏の学校
  • Place of Presentation: 鷲羽山下電ホテル, 倉敷市
  • Year and Date: 2008-08-02
• [Presentation] Epitaxial growth of Al-doped β-FeSi2 on Si(111) substrate by reactive deposition epitaxy (2008)
  • Author(s): K. Noda, Y. Terai, S. Hashimoto, Y. Fujiwara
  • Organizer: 27th Electronic Materials Symposium
  • Place of Presentation: ラフォーレ修善寺, 伊豆市
  • Year and Date: 2008-07-09
• [Presentation] Epitaxial growth of Al-doped β-FeSi_2 on Si(111) substrate by reactive deposition epitaxy (2008)
  • Author(s): Keiichi Noda
  • Organizer: 27th Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka
  • Year and Date: 2008-07-09
• [Presentation] Photoreflectance study of β-FeSi2 epitaxial films grown by molecular beam epitaxy (2008)
  • Author(s): Y. Terai, K. Noda, S. Hashimoto, Y. Fujiwara
  • Organizer: International Conference on Advanced Structural and Functional Materials Design 2008 (ICASFMD2008)
  • Place of Presentation: Hotel Hankyu Expo Park, Osaka
• [Presentation] Epitaxial growth of Al-doped β-FeSi2 on Si(111) substrate by reaction deposition epitaxy (2008)
  • Author(s): Y. Terai, S. Hashimoto, K. Noda, Y. Fujiwara
  • Organizer: 35th International Symposium on Compound Semiconductors (ISCS)
  • Place of Presentation: Europa-Park, Rust, Germany