Development of highly efficient green light emitting devices using ZnMgTe/ZnTe quantum well structure

• Project/Area Number: 20760200
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Saga University
• Principal Investigator: TANAKA Tooru Saga University, 理工学部, 准教授 (20325591)
• Project Period (FY): 2008 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000); Fiscal Year 2009: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: 発光ダイオード / 緑色 / 量子井戸構造 / ZnTe / ナノ

Research Abstract

In order to realize highly efficient green light emitting devices based on ZnTe, basic technologies for fabricating LEDs with a ZnMgTe/ZnTe quantum well structure have been investigated. As a result, the growth condition for obtaining a high-quality quantum well structure by molecular beam epitaxy was established. Also, several important basic technologies including a growth of hetero epitaxial layer with high carrier concentration by metalorganic vapor phase epitaxy were developed.

Research Products

• [Journal Article] Enhanced light output from ZnTe light emitting diodes by utilizing thin film structure (2009)
  • Author(s): Tooru Tanaka, Katsuhiko Saito, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
  • Journal Title: Applied Physics Express 2 Pages: 122101-3
  • NAID: 10027012402
  • Peer Reviewed
• [Journal Article] Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate (2009)
  • Author(s): Tooru Tanaka, Katsuhiko Saito, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
  • Journal Title: Journal of Materials Science: Materials in Electronics Vol.20
  • Peer Reviewed
• [Journal Article] ZnTe based light emitting diodes fabricated by solid-state diffusion of Al through an Al oxide layer (2009)
  • Author(s): Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
  • Journal Title: Japanese Journal of Applied Physics Vol.48 Pages: 022203-5
  • NAID: 40016464754
  • Peer Reviewed
• [Journal Article] Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers (2009)
  • Author(s): Katsuhiko Saito, Kouji Yamaguchi, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
  • Journal Title: Journal of Materials Science: Materials in Electronics Vol.20
  • Peer Reviewed
• [Journal Article] Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy (2009)
  • Author(s): Qixin Guo, Yusuke Sueyasu, Yaliu Ding, Tooru Tanaka, Mitsuhiro Nishio
  • Journal Title: Journal of Crystal Growth Vol.311 Pages: 970-973
  • Peer Reviewed
• [Journal Article] Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-temperature Buffer Layer (2009)
  • Author(s): Qixin Guo, Yusuke Sueyasu, Tooru Tanaka, Mitsuhiro Nishio, J.C. Cao
  • Journal Title: Japanese Journal of Applied Physics 48 Pages: 080208-3
  • NAID: 40016704626
  • Peer Reviewed
• [Journal Article] Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy (2009)
  • Author(s): Qixin Guo, Yusuke Sueyasu, Yaliu Ding, Tooru Tanaka, Mits uhiro Nishio
  • Journal Title: Journal of Crystal Growth 311 Pages: 970-973
  • Peer Reviewed
• [Journal Article] Fabrication of ZnTe Light Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer (2009)
  • Author(s): Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  • Journal Title: Japanese Journal of Applied Physics 47 Pages: 8408-8410
  • Peer Reviewed
• [Journal Article] Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers (2009)
  • Author(s): Katsuhiko Saito, Kouji Yamaguchi, Tooru Tanaka, Mitsuhiro Nishio. Oixin Guo. Hiroshi Ogawa
  • Journal Title: Journal of Materials Science: Materials in Electro nics 20
  • Peer Reviewed
• [Journal Article] Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate (2009)
  • Author(s): Tooru Tanaka, Katsuhiko Saito, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  • Journal Title: Journal of Materials Science: Materials in Electro nics 20
  • Peer Reviewed
• [Journal Article] ZnTe based light emitting diodes fabricated by solid-state diffusion of Al through an Al oxide layer (2009)
  • Author(s): Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, and Hiroshi Ogawa
  • Journal Title: Japanese Journal of Applied Physics 48
  • NAID: 40016464754
  • Peer Reviewed
• [Journal Article] Fabrication of ZnTe Light Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer (2008)
  • Author(s): Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
  • Journal Title: Japanese Journal of Applied Physics Vol.47 Pages: 8408-8410
  • Peer Reviewed
• [Presentation] 分子線エピタキシー法によるGaAs基板上へのZnTeナノワイヤー成長の評価 (2009)
  • Author(s): 伊藤博昭, 田中徹, 斎藤勝彦, 郭其新, 西尾光弘
  • Organizer: 平成21年度応用物理学会九州支部学術講演会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-11-22
• [Presentation] 有機金属気相成長法により作製されたAlドープZnTeエピ膜のフォトルミネッセンススペクトルの解析 (2009)
  • Author(s): 佐伯拓也, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • Organizer: 平成21年度応用物理学会九州支部学術講演会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-11-22
• [Presentation] 分子線エピタキシー法により作製したZnTe/ZnMgTe量子井戸の評価 (2009)
  • Author(s): 大下裕史, 田中徹, 斉藤勝彦, 西尾光弘, 郭其新
  • Organizer: 平成21年度応用物理学会九州支部学術講演会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-11-22
• [Presentation] MOVPE法によるAl3O2基板上ZnTeエピタキシャル成長膜のバッファー層効果 (2009)
  • Author(s): 灘真輝, 角口芳樹, 斉藤勝彦, 田中徹, 西尾光弘, 郭其新
  • Organizer: 平成21年度応用物理学会九州支部学術講演会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-11-22
• [Presentation] MOVPE法によるZn1-xMgxTeエピ膜の光学的電気的特性に及ぼすTDMAP供給量の効果 (2009)
  • Author(s): 野中直樹, 井上祐輔, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • Organizer: 平成21年度応用物理学会九州支部学術講演会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-11-22
• [Presentation] ブリッジマン法によるpドープZnMgTe結晶のフォトルミネッセンススペクトルの解析 (2009)
  • Author(s): 田中昌彦, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • Organizer: 平成21年度応用物理学会九州支部学術講演会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-11-22
• [Presentation] MOVPE法によるZn1-xMgxTeエビ膜の光学的電気的特性に及ぼすTDMAP供給量の効果 (2009)
  • Author(s): 野中直樹, 井上祐輔, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • Organizer: 平成21年度応用物理学会九州支部学術講演会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-11-22
• [Presentation] ブリッジマン法によるPドープZnMgTe結晶のフォトルミネッセンススペクトルの解析 (2009)
  • Author(s): 田中昌彦, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • Organizer: 平成21年度応用物理学会九州支部学術講演会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-11-22
• [Presentation] MOVPE法によるGaAs基板上ZnTeエピタキシャル成長膜の構造特性 (2009)
  • Author(s): 角口芳樹, 斉藤勝彦, 田中徹, 西尾光弘, 郭其新
  • Organizer: 平成21年第62回電気関係学会九州支部連合大会
  • Place of Presentation: 九州工業大学
  • Year and Date: 2009-09-29
• [Presentation] Al熱拡散法によるZnTe緑色LEDの作製と評価 (2009)
  • Author(s): 田中徹, 伊藤博昭, 吉本拓史, 郭其新, 西尾光弘, 小川博司
  • Organizer: 2009年春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method (2009)
  • Author(s): K. Saito, S. Shimao, T. Tanaka, Q.X. Guo, M. Nishio
  • Organizer: The 14th International Conference on II-VI compounds
  • Place of Presentation: St. Petersburg, Russia
• [Presentation] Growth of low-resistivity p-type ZnMgTe layers by MOVPE (2009)
  • Author(s): K. Saito, N. Nonaka, Y. Inoue, T. Tanaka, Q.X. Guo, M. Nishio
  • Organizer: The 14th International Conference on II-VI compounds
  • Place of Presentation: St. Petersburg, Russia
• [Presentation] Growth and characterization of ZnTe for pure-green light emitting diodes and terahertz devices (Invited Lecture) (2009)
  • Author(s): Qixin Guo, T. Tanaka, M. Nishio
  • Organizer: International Conference on Advances in Functional Materials
  • Place of Presentation: Jiuzhaigou, China
• [Presentation] Influence of low-temperature buffer layer on properties of ZnTe grown on GaAs substrates (2009)
  • Author(s): Q.X. Guo, K. Saito, Y. Sueyasu, Y. Ding, T. Tanaka, M. Nishio
  • Organizer: The 14th International Conference on II-VI compounds
  • Place of Presentation: St. Petersburg, Russia
• [Presentation] Temperature dependence of photoluminescence from P-doped ZnMgTe bulk crystals of high qualitv grown by Bridgman method (2009)
  • Author(s): K.Saito, S.Shimao, T.Tanaka, Q.X. Guo, M. Nishio
  • Organizer: The 14th International Conference on II-VI compounds
  • Place of Presentation: St.Petersburg, Russia
• [Presentation] Growth of low-resistivity p-type ZnMgTe layers by MOVPE (2009)
  • Author(s): K.Saito, N.Nonaka, Y.Inoue, T.Tanaka, Q.X. Guo, M.Nishio
  • Organizer: The 14th International Conference on II-VI compounds
  • Place of Presentation: St.Petersburg, Russia
• [Presentation] Influence of low-temperature buffer layer on properties of Zn Te grown on GaAs substrates (2009)
  • Author(s): Q.X. Guo, K.Saito, Y.Sueyasu, Y.Ding, T.Tanaka, M.Nishio
  • Organizer: The 14th International Conference on II-VI compounds
  • Place of Presentation: St.Petersburg, Russia
• [Presentation] ブリッジマン法で作製した高品質PドープZnMgTe結晶のフォトルミネッセンス特性 (2008)
  • Author(s): 島尾聡, 田中昌彦, 斉藤勝彦, 田中徹, 郭其新, 中畑秀利, 西尾光弘
  • Organizer: 平成20年度応用物理学会九州支部学術講演会
  • Place of Presentation: 宮崎大学
  • Year and Date: 2008-11-30
• [Presentation] MOVPE法によるGaAs基板上ZnTeエピタキシャル膜の作製と評価 (2008)
  • Author(s): 末安祐介, 中尾勇貴, 角口芳樹, 田中徹, 西尾光弘, 郭其新
  • Organizer: 平成20年度応用物理学会九州支部学術講演会
  • Place of Presentation: 宮崎大学
  • Year and Date: 2008-11-30
• [Presentation] MOVPE法によるサファイア基板上のZnTeエピタキシャル成長膜の構造特性 (2008)
  • Author(s): 中尾勇貴, 末安祐介, 角口芳樹, 灘真輝, 田中徹, 西尾光弘, 郭其新
  • Organizer: 平成20年度応用物理学会九州支部学術講演会
  • Place of Presentation: 宮崎大学
  • Year and Date: 2008-11-30
• [Presentation] サファイア基板上ZnTeエピタキシャル成長膜のアニール効果 (2008)
  • Author(s): 角口芳樹, 末安祐介, 中尾勇貴, 田中徹, 西尾光弘, 郭其新
  • Organizer: 平成20年度応用物理学会九州支部学術講演会
  • Place of Presentation: 宮崎大学
  • Year and Date: 2008-11-30
• [Presentation] PドープZn1-xMgxTeエピタキシャル膜の電気的光学的性質に及ぼすアニーリング効果 (2008)
  • Author(s): 井上祐輔, 野中直樹, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • Organizer: 平成20年度応用物理学会九州支部学術講演会
  • Place of Presentation: 宮崎大学
  • Year and Date: 2008-11-30
• [Presentation] MOVPE法によるサファイア基板上のZnTbエピタキシャル成長膜の構造特性 (2008)
  • Author(s): 中尾勇貴, 末安祐介, 角口芳樹, 灘真輝, 田中徹, 西尾光弘, 郭其新
  • Organizer: 平成20年度応用物理学会九州支部学術講演会
  • Place of Presentation: 宮崎大学
  • Year and Date: 2008-11-30
• [Presentation] Al酸化膜を用いたAl熱拡散法によるZnTe-LEDの作製 (2008)
  • Author(s): 伊藤博昭, 田中徹, 郭其新, 西尾光弘
  • Organizer: 平成20年第61回電気関係学会九州支部連合大会
  • Place of Presentation: 大分大学
  • Year and Date: 2008-09-24
• [Presentation] 有機金属気相成長法によるZn1-xMgxTeへのドーピング (2008)
  • Author(s): 野中直樹, 井上祐輔, 斉藤勝彦, 田中徹, 郭其新, 西尾光弘
  • Organizer: 平成20年第61回電気関係学会九州支部連合大会
  • Place of Presentation: 大分大学
  • Year and Date: 2008-09-24
• [Presentation] Al酸化膜を用いたAl熱拡散法によるZnTETe-LEDの作製 (2008)
  • Author(s): 伊藤博昭・田中徹・郭其新・西尾光弘
  • Organizer: 平成20年第61回電気関係学会九州支部連合大会
  • Place of Presentation: 大分大学
  • Year and Date: 2008-09-24
• [Presentation] Influence of precursor transport rate upon the optical and electrical properties of P-ZnTe homoepilayer grown by MOVPE system (2008)
  • Author(s): Xiuxun Han, Yuuki Kuramitsu, Tooru Tanaka, Qixin Guo, Mitsushiro Nishio
  • Organizer: The 4th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-4)
  • Place of Presentation: Matsue
• [Book] 第2編第7章第3節ZnTe基板・応用デバイス, 2009化合物半導体技術大全 (2009)
  • Author(s): 田中徹, 西尾光弘, 郭其新, 小川博司(分担執筆)
  • Publisher: 株式会社電子ジャーナル
• [Book] 新材料による高効率純緑色発光ダイオード, 月刊機能材料 (2009)
  • Author(s): 田中徹, 郭其新, 西尾光弘, 小川博司
  • Publisher: シーエムシー出版
• [Book] Handbook of Light Emitting and Schottky Diode Research, Chapter 15. Recent Progress in ZnTe-based green LED (2009)
  • Author(s): Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa
  • Publisher: Nova Science Publishers
• [Book] 2009化合物半導体技術大全 (2009)
  • Author(s): 田中徹, 他(分担執筆)
  • Total Pages: 324
  • Publisher: 株式会社電子ジャーナル
• [Book] 月刊機能材料 (2009)
  • Author(s): 田中徹, 他(分担執筆)
  • Total Pages: 87
  • Publisher: シーエムシー出版
• [Remarks]
  • URL: http://www.sc.ec.saga-u.ac.jp/