Development of highly efficient green light emitting devices using ZnMgTe/ZnTe quantum well structure
| Project/Area Number |
20760200
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Saga University |
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Principal Investigator |
TANAKA Tooru Saga University, 理工学部, 准教授 (20325591)
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| Project Period (FY) |
2008 – 2009
|
| Project Status |
Completed (Fiscal Year 2009)
|
| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2009: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 発光ダイオード / 緑色 / 量子井戸構造 / ZnTe / ナノ |
|---|
| Research Abstract |
In order to realize highly efficient green light emitting devices based on ZnTe, basic technologies for fabricating LEDs with a ZnMgTe/ZnTe quantum well structure have been investigated. As a result, the growth condition for obtaining a high-quality quantum well structure by molecular beam epitaxy was established. Also, several important basic technologies including a growth of hetero epitaxial layer with high carrier concentration by metalorganic vapor phase epitaxy were developed.
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Report
(3 results)
Research Products
(45 results)
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[Book] 月刊機能材料2009
Author(s)
田中徹, 他(分担執筆)
Total Pages
87
Publisher
シーエムシー出版
Related Report
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