Formation of quantum nano-wire by polarization interaction between ferroelectric and polar semiconductor
| Project/Area Number |
20760201
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka Prefecture University |
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Principal Investigator |
YOSHIMURA Takeshi Osaka Prefecture University, 工学研究科, 准教授 (30405344)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2009: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2008: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 強誘電体薄膜 / 極性半導体 / 量子デバイス / 走査プローブ顕微鏡 / ドメイン / 分極 |
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| Research Abstract |
The aim of this study is the formation of quantum nano-wires not physically but electrically. It can be expected that the quantum nano-wire is formed by nano-size ferroelectric domain formed by scanning probe microscopy at an interface between a ferroelectric and a polar semiconductor with almost same spontaneous polarizations. When a micro probe is scanned with applying voltage on the channel region of a fabricated sample, modulation of drain current corresponding to the position of the probe was observed, which indicates the possibility of the realization of the device proposing in this study.
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Report
(3 results)
Research Products
(10 results)
