Development of self-assembled quantum dot lasers in lattice-matched GaAs/AlGaAs system
| Project/Area Number |
20760207
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
MANO Takaaki National Institute for Materials Science, 量子ドットセンター, 主任研究員 (60391215)
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| Research Collaborator |
KURODA Takashi 独立行政法人物質・材料研究機構, 量子ドットセンター, 主幹研究員 (00272659)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 薄膜 / 量子構造 / 量子ドット / 結晶成長 / 半導体レーザ / 自己形成 / 半導体 / ガリウム砒素 / 液滴エピタキシー / レーザ素子 / 量子閉じ込め / 高性能レーザ / 自己組織化 |
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| Research Abstract |
We investigated and optimized droplet epitaxial quantum dot formation for their application to quantum dot lasers. We developed droplet epitaxy on GaAs (311)A surfaces and realized QDs with high density and high uniformity. Moreover, by optimizing the annealing processes, the optical qualities of QDs were improved drastically. As a result, optical pumped laser emission at room temperature was achieved.
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Report
(3 results)
Research Products
(15 results)
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[Presentation] Droplet epitaxy on GaAs (111)A2009
Author(s)
T. Mano, T. Kuroda, B. Mcskimming, A. Ohtake, K. Mitsuishi, M. Abbarchi, T. Noda, K. Sakoda
Organizer
Semicon Nano 2009
Place of Presentation
徳島・阿南高専
Year and Date
2009-08-11
Related Report
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