Fabrication of single crystalline FBAR by the use of pulsed sputtering deposition

• Project/Area Number: 20760209
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokyo
• Principal Investigator: INOUE Shigeru The University of Tokyo, 生産技術研究所, 特任助教 (10470113)
• Project Period (FY): 2008 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000); Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: 結晶成長 / FBAR

Research Abstract

The use of single crystalline films for FBAR(Film Bulk Acoustic Resonator) enhance the performance. In this study, AlN were grown on Si substrates by the use of pulsed sputtering deposition techniques with high-throughput. Cracks are introduced to AlN films in the case of direct growth on Si substrates. Superlattice layers enable us to obtain single crystalline AlN films without any cracks on Si substrates.

Research Products

• [Journal Article] Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers (2009)
  • Author(s): 岡本浩一郎, 井上茂, 中野貴之, 太田実雄, 藤岡洋
  • Journal Title: Journal of Crystal Growth 311巻 Pages: 1311-1315
  • Peer Reviewed
• [Journal Article] Epitaxial growth of GaN on single crystal Mo substrates using HfN buffer layers (2009)
  • Author(s): 岡本浩一郎, 井上茂, 中野貴之, 太田実雄, 藤岡洋
  • Journal Title: Journal of Crystal Growth 311 Pages: 1311-1315
  • Peer Reviewed
• [Presentation] Rh(111)基板上へエピタキシャル成長したAlGaNの面内配向関係 (2009)
  • Author(s): 岡野雄幸, 井上茂, 上野耕平, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
  • Organizer: 第39回結晶成長国内会議
  • Place of Presentation: 名古屋大学
  • Year and Date: 2009-11-13
• [Presentation] Rh(111)基板上ヘエピタキシャル成長したAlGaNの面内配向関係 (2009)
  • Author(s): 岡野雄幸, 井上茂, 上野耕平, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
  • Organizer: 第39回結晶成長国内会議
  • Place of Presentation: 名古屋大学
  • Year and Date: 2009-11-13
• [Presentation] GaN/HfN/Si(110)へテロ構造の作製と界面の評価 (2009)
  • Author(s): 宋顕成, 井上茂, 太田実雄, 藤岡洋, 伊勢村雅士
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 波大学
  • Year and Date: 2009-03-30
• [Presentation] GaN/HfN/Si(110)ヘテロ構造の作製と界面の評価 (2009)
  • Author(s): 宋顕成, 井上茂, 太田実雄, 藤岡洋, 伊勢村雅士
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30