Fabrication of transparent high mobility light emitting devices by controlling lattice defects
| Project/Area Number |
20760448
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
OHNISHI Tsuyoshi National Institute for Materials Science, 国際ナノアーキテクトニクス研究拠点, MANA研究者 (80345230)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2008: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 表面 / 界面物性 / マイクロ・ナノデバイス / MBE、エピタキシャル |
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| Research Abstract |
I have investigated to develop transparent, electrically conductive, and light emitting devices composed of SrTiO_3, which is a key material in oxide electronics, just like Si in semiconducting electronics. Formation of AlO_x thin films on SrTiO_3 single crystals and analyses of these samples resulted in constructions of transparent conductive, conductive light emitting, and transparent light emitting SrTiO_3. Formation design of transparent, conductive, and light emitting SrTiO_3 was obtained.
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Report
(3 results)
Research Products
(36 results)
