| Project/Area Number |
20760474
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Structural/Functional materials
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| Research Institution | Tohoku University |
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Principal Investigator |
NAGANUMA Hiroshi Tohoku University, 大学院・工学研究科, 助教 (60434023)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2008: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | ビスマスフェライト / 薄膜 / マルチフェロイクス / 強誘電性 / 反強磁性 / 自発磁化 / コバルト / 置換型 / BiFeO_3 |
|---|
| Research Abstract |
In this study, we demonstrated that by controlling the valence of ion at B-site in BiFeO_3 of antiferromagneitc material can be realized coexistence of ferromagnetic and ferroelectric above room temperature. Next, in order to prepare the very thin film for use as spintronics application such as spin-filter, we prepared the films by sputtering instead of chemical solution deposition method which can not prepare a few nano-meter films. Finally, we successfully prepared high quality epitaxial single- phase-films with thickness of 100 nm onto SrTiO_3(001) single crystal substrates using sputtering method.
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