• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Perfect Control Electronic Device Application of Organic Crystal Growth at Soild/Liquid Interface and device applications

Research Project

Project/Area Number 20760485
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Material processing/treatments
Research InstitutionTohoku University

Principal Investigator

FUKIDOME Hirokazu  Tohoku University, 電気通信研究所, 助教 (10342841)

Project Period (FY) 2008 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2009: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2008: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Keywords有機結晶 / グラフェン / 電子デバイス / 有機結晶成長 / ルブレン
Research Abstract

In this project, we have studied the crystal-growth process of rubrene and graphene at solid/liquid interfaces by using atomic-scale characterization methods, for instance, atomic force microscopy. Almost perfect single crystal of rubrene could be obtained and be used in device applications. On the other hand, high-quality graphene crystalline films could be formed on silicon substrates, and the control of the electronic properties of the graphene film has been established.

Report

(3 results)
  • 2009 Annual Research Report   Final Research Report ( PDF )
  • 2008 Annual Research Report
  • Research Products

    (17 results)

All 2010 2009 Other

All Journal Article (7 results) (of which Peer Reviewed: 7 results) Presentation (6 results) Remarks (3 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Epitaxial Graphene on Silicon Substrate2010

    • Author(s)
      末光眞希、吹留博一
    • Journal Title

      Journal of Physics D 43(印刷中)

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth Processes of graphene on Si Substrates2010

    • Author(s)
      吹留博一、半田浩之、斎藤英司、末光眞希
    • Journal Title

      Japanese Journal of Applied Physics 49

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Epitaxial Growth Processes of Graphene on Silicon Substrates2010

    • Author(s)
      H.Fukidome, Y.Miyamoto, H.Handa, E.Saito, M.Suemitsu
    • Journal Title

      Japanese Journal of Applied Physi.cs 49

    • NAID

      210000067872

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Raman Spectrscopy of grapheneon 3C-SiC thin films on Si Substrates2009

    • Author(s)
      宮本優、半田浩之、吹留博一、末光眞希
    • Journal Title

      e-Journal of Surface and Nanotechnology 7

      Pages: 107-109

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] High-resolution molecular images of rubrene single crystals obtained by frequency modulation atomic force microscopy2009

    • Author(s)
      湊丈俊、青木洋人、吹留博一、トーステン・ワグナー、板谷謹悟
    • Journal Title

      Applied Physics Letters 95

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] High-resolution molecular images of rubrene single crystals obtained by frequency modulation atomic force microscopy2009

    • Author(s)
      Taketoshi Minato, Hiroto Aoki, Hirokazu Fukidome, Thorsten Wagner, Kingo Itaya
    • Journal Title

      Applied Physics Letters 95

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Raman Scattering of Epitaxial Graphene Formed on Silicon Substrates2009

    • Author(s)
      Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tankashi Ito, Maki Suemitsu
    • Journal Title

      e-Journal of Surface Science and Nanotechnology 3

      Pages: 107-1009

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Presentation] Epitaxial growth of graphene on various silicon substrates2009

    • Author(s)
      吹留博一、宮本優、半田浩、高橋良太、今泉京、末光眞希
    • Organizer
      Solid State Electron Devices 2009
    • Place of Presentation
      仙台エクセルホテル東急
    • Year and Date
      2009-10-08
    • Related Report
      2009 Final Research Report
  • [Presentation] Epitaxy of Graphene on Si substrates toward Three-Dimensional Graphene Devices2009

    • Author(s)
      Hirokazu Fukidome, Yu Miyamoto, Hiroyuki Handa, Ryota Takahashi, Kei.Imaizumi, Maki Suemitsu
    • Organizer
      Solid State Electron Devices 2009
    • Place of Presentation
      仙台
    • Year and Date
      2009-10-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] グラフェン・オン・シリコンの基板面方位依存性2009

    • Author(s)
      吹留博一、宮本優、半田浩之、斎藤英司、末光眞希
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Related Report
      2009 Final Research Report
  • [Presentation] Si(111), Si(100), Si(110)基板表面上へのグラフェン・オン・シリコンの形成2009

    • Author(s)
      吹留博一、宮本優、半田浩之、齋藤英司、末光眞希
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] シリコン基板上のグラフェン形成過程のRaman分光による観察2009

    • Author(s)
      宮本優、半田浩之、吹留博一、伊藤隆、末光眞希
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-31
    • Related Report
      2009 Final Research Report
  • [Presentation] Si基板上に成長させたグラフェンの共鳴ラマン分光2009

    • Author(s)
      宮本優, 半田浩之, 吹留博一, 伊藤隆, 末光眞希
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波
    • Year and Date
      2009-03-31
    • Related Report
      2008 Annual Research Report
  • [Remarks]

    • URL

      http://www.suemitsu.riec.tohoku.ac.jp/subjects.html

    • Related Report
      2009 Final Research Report
  • [Remarks]

    • URL

      http://www.suemitsu.riec.tohoku.ac.jp/subjects.html

    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://www.suemitsu.riec.tohoku.ac.jp/subjects.html

    • Related Report
      2008 Annual Research Report
  • [Patent(Industrial Property Rights)] グラフェンの低温形成法2010

    • Inventor(s)
      吹留博一、今泉京、末光眞
    • Industrial Property Rights Holder
      東北大学、日本原子力研究開
    • Industrial Property Number
      2010-045842
    • Filing Date
      2010-03-02
    • Related Report
      2009 Final Research Report

URL: 

Published: 2008-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi