New methods of Si nanopore formation for DNA sequencing
| Project/Area Number |
20760495
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Material processing/treatments
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| Research Institution | Kyushu University |
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Principal Investigator |
IKOMA Yoshifumi Kyushu University, 大学院・工学研究院, 助教 (90315119)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | ナノポア / ナノプロセス / 化学気相堆積法 / シリコン / シリコンカーバイド / パルスジェットCVD / 形成位置制御 |
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| Research Abstract |
A nanometer-sized pore (nanopore) is attractive for applications to molecular sensors such as DNA sequencers. We investigated the formation of nanopores obtained by utilizing the {111} faceted pit formation during the chemical vapor deposition of the SiC growth on Si substrates. It was found that the nanopores with the size of several 10 nm were obtained on a Si membrane which was formed by anisotropic etching of a SOI substrate.
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Report
(4 results)
Research Products
(23 results)
