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New methods of Si nanopore formation for DNA sequencing

Research Project

Project/Area Number 20760495
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Material processing/treatments
Research InstitutionKyushu University

Principal Investigator

IKOMA Yoshifumi  Kyushu University, 大学院・工学研究院, 助教 (90315119)

Project Period (FY) 2008 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Keywordsナノポア / ナノプロセス / 化学気相堆積法 / シリコン / シリコンカーバイド / パルスジェットCVD / 形成位置制御
Research Abstract

A nanometer-sized pore (nanopore) is attractive for applications to molecular sensors such as DNA sequencers. We investigated the formation of nanopores obtained by utilizing the {111} faceted pit formation during the chemical vapor deposition of the SiC growth on Si substrates. It was found that the nanopores with the size of several 10 nm were obtained on a Si membrane which was formed by anisotropic etching of a SOI substrate.

Report

(4 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (23 results)

All 2011 2010 2009 2008 Other

All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (18 results) Remarks (1 results)

  • [Journal Article] Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)2011

    • Author(s)
      Yoshifumi Ikoma, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka
    • Journal Title

      Proc.SPIE

      Volume: 7995

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates : nanopore density control2011

    • Author(s)
      Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka
    • Journal Title

      Proc.SPIE

      Volume: 7995

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)2010

    • Author(s)
      Yoshifumi Ikoma, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka
    • Journal Title

      Proc.SPIE 7995 79951Y

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates : nanopore density control2010

    • Author(s)
      Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka
    • Journal Title

      Proc.SPIE 7995 799520

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Presentation] Microscopic observation of Nanopores formed in SIMOX(100)utilizing methylsilane pulse jet CVD2011

    • Author(s)
      Hafizal Yahaya, Yoshifumi Ikoma, Teruaki Motooka
    • Organizer
      International colloquium on "Recent progress in nanofabrications of MEMS and NEMS : Science and innovation technologies
    • Place of Presentation
      博多都ホテル
    • Year and Date
      2011-03-23
    • Related Report
      2010 Final Research Report
  • [Presentation] Microscopic observation of Nanopores formed in SIMOX(100) utilizing methylsilane pulse jet CVD2011

    • Author(s)
      Hafizal Yahaya, Yoshifumi Ikoma, Teruaki Motooka
    • Organizer
      International colloquium on "Recent progress in nanofabrications of MEMS and NEMS : Science and innovation technologies"
    • Place of Presentation
      博多都ホテル(福岡県)
    • Year and Date
      2011-03-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)2010

    • Author(s)
      Yoshifumi Ikoma, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka
    • Organizer
      7th International Conference on Thin Film Physics and Applications (TFPA2010)
    • Place of Presentation
      Tongji University, China
    • Year and Date
      2010-09-26
    • Related Report
      2010 Final Research Report
  • [Presentation] Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates : Nanopore density control2010

    • Author(s)
      Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka
    • Organizer
      7th International Conference on Thin Film Physics and Applications (TFPA2010)
    • Place of Presentation
      Tongji University, China
    • Year and Date
      2010-09-26
    • Related Report
      2010 Final Research Report
  • [Presentation] Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)2010

    • Author(s)
      Yoshifumi Ikoma, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka
    • Organizer
      7th International Conference on Thin Film Physics and Applications
    • Place of Presentation
      Tongji University(中国上海市)
    • Year and Date
      2010-09-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates : Nanopore density control2010

    • Author(s)
      Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka
    • Organizer
      7th International Conference on Thin Film Physics and Applications
    • Place of Presentation
      Tongji University(中国上海市)
    • Year and Date
      2010-09-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] Formation of nanopores utilizing SiC heteroepitaxial growth on SOI (100): Pit faced orientation2010

    • Author(s)
      Hafizal Yahaya, 崎田博文, 西野勇太, 生駒嘉史, 本岡輝昭
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Final Research Report
  • [Presentation] Formation of nanopores utilizing SiC heteroepitaxial growth on SOI(100) : Pit faced orientation2010

    • Author(s)
      Yahaya Hafizal, 崎田博文, 西野勇太, 生駒嘉史, 本岡輝昭
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] SiC/Si(100)ヘテロエピタキシャル成長を利用した半導体ナノポアの形成2010

    • Author(s)
      崎田博文, 西野勇太, Hafizal Yahaya, 生駒嘉史, 本岡輝昭
    • Organizer
      日本金属学会九州支部日本鉄鋼協会九州支部共催平成22年度合同学術講演会
    • Place of Presentation
      熊本大学
    • Year and Date
      2010-06-05
    • Related Report
      2010 Final Research Report
  • [Presentation] SiC/Si(100)ヘテロエピタキシャル成長を利用した半導体ナノポアの形成2010

    • Author(s)
      崎田博文, 西野勇太, Hafizal Yahaya, 生駒嘉史, 本岡輝昭
    • Organizer
      日本金属学会九州支部日本鉄鋼協会九州支部共催平成22年度合同学術講演会
    • Place of Presentation
      熊本大学(熊本県)
    • Year and Date
      2010-06-05
    • Related Report
      2010 Annual Research Report
  • [Presentation] Nanopore formation on SOI substrates by chemical vapor deposition2010

    • Author(s)
      Yoshifumi Ikoma, Hafizal bin Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka
    • Organizer
      International colloquium on "Recent progress in nanotechnologies : From nanoindentation on semiconductor materials to DNA and molecular devices
    • Place of Presentation
      博多都ホテル
    • Year and Date
      2010-03-15
    • Related Report
      2010 Final Research Report
  • [Presentation] Nanopore formation on SOI substrates by chemical vapor depositon2010

    • Author(s)
      Yoshifumi Ikoma, Hafizal bin Yahaya, Hirofumi Sakita, Yuuta Nishino, Teruaki Motooka
    • Organizer
      第一回九州大学クリーン実験ステーション成果報告会
    • Place of Presentation
      博多都ホテル
    • Year and Date
      2010-03-15
    • Related Report
      2009 Annual Research Report
  • [Presentation] New approach to formation of nanopore on SOI : SiC/Si heteroepitaxial growth by supersonic jet CVD2009

    • Author(s)
      Yoshifumi Ikoma, Kenta Ono, Mutsunori Uenuma, Tomohiko Ogata, Teruaki Motooka
    • Organizer
      The 11th International Symposium on Materials Science and Engineering between Chonbuk National University and Kyushu University
    • Place of Presentation
      Chonbuk National University, Korea
    • Year and Date
      2009-11-05
    • Related Report
      2010 Final Research Report
  • [Presentation] SiC/Si(001)ヘテロエピタキシャル成長を利用したSOI基板へのナノポア形成(IV)2009

    • Author(s)
      生駒嘉史, 栗山恵司, 崎田博文, ハフィザルビンヤハヤ, 本岡輝昭
    • Organizer
      2009年(平成21年)春季第56回応用物理学関連連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-31
    • Related Report
      2010 Final Research Report
  • [Presentation] SiC/Si(001)ヘテロエピタキシャル成長を利用したSOI 基板へのナノポア形成(III)2009

    • Author(s)
      ハフィザルビンヤハヤ, 栗山恵司, 崎田博文, 生駒嘉史, 本岡輝昭
    • Organizer
      2009年(平成21年)春季第56回応用物理学関連連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-31
    • Related Report
      2010 Final Research Report
  • [Presentation] SiC/Si(001)ヘテロエピタキシャル成長を利用したsoI基板へのナノボア形成(III)2009

    • Author(s)
      ハフィザル ビンヤハヤ, 栗山恵司, 崎田博文, 生駒嘉史, 本岡輝昭
    • Organizer
      2009年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-31
    • Related Report
      2008 Annual Research Report
  • [Presentation] SiC/Si(001)ヘテロエピタキシャル成長を利用したSOI基板へのナノボア形成(IV)2009

    • Author(s)
      生駒嘉史, 栗山恵司, 崎田博文, ハフィザル ビンヤハヤ, 本岡輝昭
    • Organizer
      2009年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-31
    • Related Report
      2008 Annual Research Report
  • [Presentation] SiC/Si(100)ヘテロエピタキシャル成長を利用したSOI基板へのナノポア形成2008

    • Author(s)
      栗山恵司, 生駒嘉史, 本岡輝昭
    • Organizer
      平成20年度応用物理学会九州支部学術講演会
    • Place of Presentation
      宮崎大学
    • Year and Date
      2008-11-29
    • Related Report
      2010 Final Research Report
  • [Remarks] ホームページ等

    • Related Report
      2010 Final Research Report

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Published: 2008-04-01   Modified: 2016-04-21  

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