New methods of Si nanopore formation for DNA sequencing

• Project/Area Number: 20760495
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Material processing/treatments
• Research Institution: Kyushu University
• Principal Investigator: IKOMA Yoshifumi Kyushu University, 大学院・工学研究院, 助教 (90315119)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2009: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: ナノポア / ナノプロセス / 化学気相堆積法 / シリコン / シリコンカーバイド / パルスジェットCVD / 形成位置制御

Research Abstract

A nanometer-sized pore (nanopore) is attractive for applications to molecular sensors such as DNA sequencers. We investigated the formation of nanopores obtained by utilizing the {111} faceted pit formation during the chemical vapor deposition of the SiC growth on Si substrates. It was found that the nanopores with the size of several 10 nm were obtained on a Si membrane which was formed by anisotropic etching of a SOI substrate.

Research Products

• [Journal Article] Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100) (2011)
  • Author(s): Yoshifumi Ikoma, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka
  • Journal Title: Proc.SPIE Volume: 7995
  • Peer Reviewed
• [Journal Article] Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates : nanopore density control (2011)
  • Author(s): Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka
  • Journal Title: Proc.SPIE Volume: 7995
  • Peer Reviewed
• [Journal Article] Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100) (2010)
  • Author(s): Yoshifumi Ikoma, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka
  • Journal Title: Proc.SPIE 7995 79951Y
  • Peer Reviewed
• [Journal Article] Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates : nanopore density control (2010)
  • Author(s): Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka
  • Journal Title: Proc.SPIE 7995 799520
  • Peer Reviewed
• [Presentation] Microscopic observation of Nanopores formed in SIMOX(100)utilizing methylsilane pulse jet CVD (2011)
  • Author(s): Hafizal Yahaya, Yoshifumi Ikoma, Teruaki Motooka
  • Organizer: International colloquium on "Recent progress in nanofabrications of MEMS and NEMS : Science and innovation technologies
  • Place of Presentation: 博多都ホテル
  • Year and Date: 2011-03-23
• [Presentation] Microscopic observation of Nanopores formed in SIMOX(100) utilizing methylsilane pulse jet CVD (2011)
  • Author(s): Hafizal Yahaya, Yoshifumi Ikoma, Teruaki Motooka
  • Organizer: International colloquium on "Recent progress in nanofabrications of MEMS and NEMS : Science and innovation technologies"
  • Place of Presentation: 博多都ホテル(福岡県)
  • Year and Date: 2011-03-23
• [Presentation] Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100) (2010)
  • Author(s): Yoshifumi Ikoma, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka
  • Organizer: 7th International Conference on Thin Film Physics and Applications (TFPA2010)
  • Place of Presentation: Tongji University, China
  • Year and Date: 2010-09-26
• [Presentation] Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates : Nanopore density control (2010)
  • Author(s): Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka
  • Organizer: 7th International Conference on Thin Film Physics and Applications (TFPA2010)
  • Place of Presentation: Tongji University, China
  • Year and Date: 2010-09-26
• [Presentation] Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100) (2010)
  • Author(s): Yoshifumi Ikoma, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka
  • Organizer: 7th International Conference on Thin Film Physics and Applications
  • Place of Presentation: Tongji University(中国上海市)
  • Year and Date: 2010-09-26
• [Presentation] Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates : Nanopore density control (2010)
  • Author(s): Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka
  • Organizer: 7th International Conference on Thin Film Physics and Applications
  • Place of Presentation: Tongji University(中国上海市)
  • Year and Date: 2010-09-26
• [Presentation] Formation of nanopores utilizing SiC heteroepitaxial growth on SOI (100): Pit faced orientation (2010)
  • Author(s): Hafizal Yahaya, 崎田博文, 西野勇太, 生駒嘉史, 本岡輝昭
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-16
• [Presentation] Formation of nanopores utilizing SiC heteroepitaxial growth on SOI(100) : Pit faced orientation (2010)
  • Author(s): Yahaya Hafizal, 崎田博文, 西野勇太, 生駒嘉史, 本岡輝昭
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-16
• [Presentation] SiC/Si(100)ヘテロエピタキシャル成長を利用した半導体ナノポアの形成 (2010)
  • Author(s): 崎田博文, 西野勇太, Hafizal Yahaya, 生駒嘉史, 本岡輝昭
  • Organizer: 日本金属学会九州支部日本鉄鋼協会九州支部共催平成22年度合同学術講演会
  • Place of Presentation: 熊本大学
  • Year and Date: 2010-06-05
• [Presentation] SiC/Si(100)ヘテロエピタキシャル成長を利用した半導体ナノポアの形成 (2010)
  • Author(s): 崎田博文, 西野勇太, Hafizal Yahaya, 生駒嘉史, 本岡輝昭
  • Organizer: 日本金属学会九州支部日本鉄鋼協会九州支部共催平成22年度合同学術講演会
  • Place of Presentation: 熊本大学(熊本県)
  • Year and Date: 2010-06-05
• [Presentation] Nanopore formation on SOI substrates by chemical vapor deposition (2010)
  • Author(s): Yoshifumi Ikoma, Hafizal bin Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka
  • Organizer: International colloquium on "Recent progress in nanotechnologies : From nanoindentation on semiconductor materials to DNA and molecular devices
  • Place of Presentation: 博多都ホテル
  • Year and Date: 2010-03-15
• [Presentation] Nanopore formation on SOI substrates by chemical vapor depositon (2010)
  • Author(s): Yoshifumi Ikoma, Hafizal bin Yahaya, Hirofumi Sakita, Yuuta Nishino, Teruaki Motooka
  • Organizer: 第一回九州大学クリーン実験ステーション成果報告会
  • Place of Presentation: 博多都ホテル
  • Year and Date: 2010-03-15
• [Presentation] New approach to formation of nanopore on SOI : SiC/Si heteroepitaxial growth by supersonic jet CVD (2009)
  • Author(s): Yoshifumi Ikoma, Kenta Ono, Mutsunori Uenuma, Tomohiko Ogata, Teruaki Motooka
  • Organizer: The 11th International Symposium on Materials Science and Engineering between Chonbuk National University and Kyushu University
  • Place of Presentation: Chonbuk National University, Korea
  • Year and Date: 2009-11-05
• [Presentation] SiC/Si(001)ヘテロエピタキシャル成長を利用したSOI基板へのナノポア形成(IV) (2009)
  • Author(s): 生駒嘉史, 栗山恵司, 崎田博文, ハフィザルビンヤハヤ, 本岡輝昭
  • Organizer: 2009年(平成21年)春季第56回応用物理学関連連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-31
• [Presentation] SiC/Si(001)ヘテロエピタキシャル成長を利用したSOI 基板へのナノポア形成(III) (2009)
  • Author(s): ハフィザルビンヤハヤ, 栗山恵司, 崎田博文, 生駒嘉史, 本岡輝昭
  • Organizer: 2009年(平成21年)春季第56回応用物理学関連連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-31
• [Presentation] SiC/Si(001)ヘテロエピタキシャル成長を利用したsoI基板へのナノボア形成(III) (2009)
  • Author(s): ハフィザル ビンヤハヤ, 栗山恵司, 崎田博文, 生駒嘉史, 本岡輝昭
  • Organizer: 2009年春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-31
• [Presentation] SiC/Si(001)ヘテロエピタキシャル成長を利用したSOI基板へのナノボア形成(IV) (2009)
  • Author(s): 生駒嘉史, 栗山恵司, 崎田博文, ハフィザル ビンヤハヤ, 本岡輝昭
  • Organizer: 2009年春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-31
• [Presentation] SiC/Si(100)ヘテロエピタキシャル成長を利用したSOI基板へのナノポア形成 (2008)
  • Author(s): 栗山恵司, 生駒嘉史, 本岡輝昭
  • Organizer: 平成20年度応用物理学会九州支部学術講演会
  • Place of Presentation: 宮崎大学
  • Year and Date: 2008-11-29
• [Remarks] ホームページ等